The radiation effects of protons will lead to degradation of dark signal of CCD. The degradation mechanism of dark signals of CCD are different due to the different proton energy. This paper investigated the radiation effects and annealing effects of CCD exposed to 3MeV and 10MeV proton. The test result shown that 3MeV proton irradiation induced CCD’s dark signal decreasing linearly following the proton fluence. The dark signal degradation induced by 10MeV was not linearly, due to the different defects introduced by proton with different energy. The results above indicates that the displacement damage behavior of defects introduced by 10MeV proton is more complex than 3MeV proton. There are more than two kinds of displacement damage defects dominating the increase of the dark signal. The results of this paper provided important reference for CCD’s proton radiation test method and evaluation technology.
We investigate the effects of 1.0MeV electron beam irradiation on the photoluminescence of self-assembled InAs/GaAs quantum dots. After irradiation doses up to 1×10<sup>16</sup>e-/cm<sup>2</sup> , photoluminescence of all samples was degraded dramatically and some additional radiation-induced changes in photo-carrier recombination from QDs, which include a slight increase in PL emission with low electron doses under different photo-injection condition in two samples, are also noticed. Different energy shift was observed in two samples with different Quantum Dot sizes. We attribute this remarkable phenomenon to combination of stress relaxation induced red-shift and In-Ga intermixing caused blue-shift.