An antireflection coating material for optically pumped group IV-VI lead-chalcogenide semiconductor light emitting devices has been proposed. The coating has been used to increase the photo-pumping efficiency. Theoretical model showed that with the proposed AR coating with a quarter wavelength thickness, 0.008% reflectivity could be achieved in the 980nm-982nm wavelength region. The antireflection property of the coated film was investigated by FTIR-spectroscopic reflectance measurement. Room temperature continuous-wave photoluminescence measurement from AR-coated multiple quantum well structures showed up to 4-times increment in the PL intensity, compared to uncoated ones.
Low dimensional lead salt structure such as quantum-well (QW) structure is proposed for the fabrication of opto-electronic devices. Among , , and  orientations, -orientated QW structure offers the highest gain. Theoretical simulations of  QW Pb-salt edge-emitting lasers show a 70-degree temperature increase in continuous-wave (CW) operation compared to the conventional -orientated lasers. With modestly reduced Auger recombination of low dimensional material and with improved heat dissipation for laser structure, CW operation with about 10 mW output powers at room temperature for PbSe QW laser is predicted. PbSe epitaxial layer and PbSe/PbSrSe QW structures were, for the first time, successfully grown on -orientated BaF2 substrate by molecular-beam-epitaxy (MBE). The linewidth of the rocking curve from high-resolution x-ray diffraction (HRXRD) measurement for PbSe thin film is 60 arcsec, which indicates high crystalline quality. The dislocation density estimated by the rocking curve is 1.18x107 cm-2. Photoluminescence intensity of -orientated samples was twice as high as that on -orientated BaF2 substrates from the same MBE run.