In this paper, the composition, morphology and electrical properties of the passivation layer for CdZnTe detectors were
investigated. A two-step passivation was performed under different conditions, including passivation time, temperature
and NH<sub>4</sub>F/H<sub>2</sub>O<sub>2</sub> concentration. The obtained passivation layers were characterized by XRD, SEM, XRF and I-V methods.
The results showed that the best passivation condition was with the NH<sub>4</sub>F/H<sub>2</sub>O<sub>2</sub> concentration of 10wt%, passivation
time of 40min and temperature of 20ºC. Under this condition, the passivation layer was purely oxidized and compact,
and the surface leakage current of CZT crystals was most effectively reduced.