The fabrication and testing results of a 65-pin ceramic packaged 4×4 arrayed position sensitive detector are presented. The detector, consisting of 16 tetra-lateral sensitive areas, is a p-n-n+ configuration made on 3-in. 111 n-type high resistance crystal silicon substrates. A 100-nm antireflection SiO2 thin film is formed on the surface, along with a multilayer cover glass with transmissivity >98% from 400 to 950 nm. Primary tests of the device show that it has a low dark current, high spectral sensitivity, very fast response speed, and very good linearity. The dark current of an element unit is less than 20 nA, which is the allowable maximum dark current. The peak spectral sensitivity of the sensor is over 505 mA/W at 800-nm wavelength. Its response time is 8 ns at 45-V reverse bias and the nonlinearity of the total sensitive area is less than 1%.
Position sensitive detectors (PSD) use the lateral photo effect to determine the centroid position of an incident light spot focused on it. A 65-pin ceramic packaged 4×4 arrayed position sensitive detector was fabricated first time as a new prototype of Hartmann-Shack wavefront sensor. The detector, consisting of 16 tetra-lateral sensitive areas, is a p-n-n+ configuration made on 3-inch <111> n-type high resistance crystal silicon substrate. A 100nm antireflection SiO2 thin film was formed on the surface and a multi-layer cover glass with transmissivity > 98% from 400nm to 950nm. The main parameters of the arrayed as wavefront detector, such as reverse voltage, dark current photosensitivity, response time were reported in the paper.
Position Sensitive Detector (PSD) is a position sensor utilizing the lateral photoelectric effect produced by the non-uniform illumination of a rectifying semiconductor junction. Recently, mostly researches of PSD focus on the linear requirements or response characters of PSD with p-n junction. However, this paper concentrates on a novel characteristics of PSD based on the Schottky junction. This junction has many distinguished traits comparing with the p-n junction. Since the intrinsic excellent characteristics, the Schottky PSD has faster response and higher sensitivity to the incident radiation, lager current density, low current leakage and so on. This paper provides an analysis and model of the Schottky-barrier PSD lateral potential creation, response characteristic and position linearity condition with the Schottky junction, which is deduced by the charge conversation law and the model of carriers transport. All the study work is the theoretical basis for design of this junction with better performance.