We designed and fabricated a 1.3-um hybrid vertical Resonant-Cavity Light-Emitting Diode for optical interconnect by using direct III-V wafer bonding on silicon on insulator (SOI). The device included InP based front distributed Bragg reflector (DBR), InGaAlAs based active layer, and SOI-based high-contrast-grating (HCG) as a back reflector. 42-uW continuous wave optical power was achieved at 20mA at room temperature.
This paper will introduce the fabrication methods of electro-absorption modulated lasers (EMLs) and the latest
results of EMLs fabricated by a novel technology named selective area growth double-stack active layer
(SAG-DSAL) developed by the authors.
A partly gain-coupled ridge varied two-section DFB self-pulsation laser for optical microwave generating
has been fabricated. It produces microwave with a wide tuning range of more than 135GHz. A successful
locked to the microwave frequencies of 30GHz, 40GHz, 50GHz, 60GHz are demonstrated and a timing
jitter below 300fs is detected.
A complex-coupled DFB Laser with the sampled grating has been designed and fabricated. The +1<sup>st</sup> order reflection of
the sampled grating is utilized for laser single mode operation, which is 1.5387μm in the experiment. The typical
threshold current of the device is 30mA, and the optical output power is about 10mW at the injected current of 100mA.