This submission describes the operational principles of silicon-based Micro Ring resonators (MRRs) for use in optical communication using OOK, particularly with regard to WDM. The importance of accurate device modeling is emphasized. Experimental results are provided for Si MRRs fabricated to provide high extinction ratio and low-insertion loss suitable for operation at a 10Gbps transfer rate.
We have fabricated silicon avalanche photodetectors integrated with silicon-on-insulator straight waveguides as well as
ring resonator structures. The photodetectors comprise a p-i-n junction, with photogeneration mediated by the presence
of deep-levels. For a 400 μm straight waveguide detector we measure a responsivity of 4.4 A/W at 40 V, and an
avalanche multiplication gain of 640. The detectors incorporated with a ring resonator, offer a high sensitivity,
wavelength selective detector option suitable for very low power applications, with a responsivity of 20 A/W at 30 V.
In this paper we will describe the fabrication and characterization of passive waveguides which exploit the phenomenon
of variable charge state mediation of deep-levels in silicon to vary optical absorption. Silicon waveguides are doped with
either thallium or indium and co-doped with phosphorus. Optical absorption is reduced s phosphorus doping is increased.
These results suggest a novel method of modulation via charge-state control of the deep-level.