The ability to create metamorphic hybrid heterostructure of 1300 nm spectral band VCSEL is demonstrated. Metamorphic semiconductor part of heterostructure with GaAs/AlGaAs DBR and InAlGaAs/InGaAs QW active region has been grown by molecular beam epitaxy (MBE) on GaAs (100). Top dielectric SiO2/Ta2O5 DBR is made by the magnetron sputtering method. VCSEL has been studied under optical pumping (λ = 532 nm, diameter of the focused laser beam of ~ 1 μm) by using micro-PL setup in the range of optical pump power 0 – 70 mW at room temperature. Presence of the superlinear PL intensity growth having threshold-like dependence of PL integral intensity together with the PL peaks narrowing and mode composition modification with the pumping density increasing could be attributed to lasing behavior of the structure. Obtained results indicate the opportunity to use metamorphic growth on GaAs substrates for the 1300 nm range VCSEL manufacturing.
In this work, electrically-injected microdisk lasers with diameter varied from 15 to 31μm based on an InAs/InGaAs QD
active region have been fabricated and tested in continuous wave regime. At room temperature, lasing is achieved at
wavelength around 1.26…1.27 μm with threshold current density about 900 A/cm2. Specific series resistance is
estimated to be about 10-4 Ohm•cm2. The lasers were tested at elevated temperatures. Lasing is achieved up to 100°C
with threshold current of 13.8mA and lasing wavelength of 1304nm in device with 31μm diameter. To the best of our
knowledge, this is the highest CW lasing temperature and the longest lasing wavelength ever reported for injection QD
microdisk/microring lasers on GaAs substrates. Emission spectrum demonstrates single-mode lasing with side mode
suppression ration of 24dB and dominant mode linewidth of 35pm. The far field radiation pattern demonstrates two
narrow maxima off the disk plane. A combination of device characteristics achieved (low threshold, long wavelength,
operation at elevated temperatures) makes them suitable for application in future optoelectronic circuits for optical
Conference Committee Involvement (1)
International School and Conference "Saint-Petersburg OPEN 2015"