Dr. E. Kirk Miller Profile

Dr. E. Kirk Miller

Applications Scientist

SPIE Involvement:

Author

Publications (18)

Proceedings Article | 10 September 2014 Paper

Paper

Mach-Zehnder detector system issues and enhancements for use on the National Ignition Facility DANTE x-ray diagnostic

B. Beeman, A. Carpenter, J. Kimbrough, T. Clancy, R. Chow, E. Bond, Z. Zayas-Rivera, P. Bell, J. Celeste, A. MacPhee, W. Widmann, T. Golod, E. Miller, R. Abbott, K. Lee, J. Peterson, S. Gordoni, J. Buckley, W. Donaldson

Proceedings Volume 9211, 92110E (2014) https://doi.org/10.1117/12.2063836

KEYWORDS: National Ignition Facility, Diagnostics, Semiconductor lasers, X-rays, Polarization, Fiber lasers, Servomechanisms, Sensors, X-ray detectors, Optical amplifiers

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Proceedings Article | 15 October 2012 Paper

Paper

Mach-Zehnder modulator performance using the Comet laser facility and implications for use on NIF

B. Beeman, A. MacPhee, J. Kimbrough, G. Lacaille, M. Barrios, J. Emig, J. Hunter, E. Miller, W. Donaldson

Proceedings Volume 8505, 850507 (2012) https://doi.org/10.1117/12.931436

KEYWORDS: Comets, Signal detection, National Ignition Facility, Diagnostics, Signal to noise ratio, Multiplexing, Modulators, Pulsed laser operation, Interference (communication), X-rays

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Proceedings Article | 9 September 2010 Paper

Paper

Overview of the gamma reaction history diagnostic for the National Ignition Facility (NIF)

Robert Malone, Zaheer Ali, Brian Cox, Scott Evans, Brent Frogget, Hans Herrmann, Morris Kaufman, Yong Kim, Kevin McGillivray, Joseph Mack, E. Kirk Miller, Martin Palagi, Wolfgang Stoeffl, Aric Tibbitts, Thomas Tunnell, Carl Young

Proceedings Volume 7652, 76520Z (2010) https://doi.org/10.1117/12.869102

KEYWORDS: Sensors, National Ignition Facility, Mirrors, Fusion energy, Diagnostics, Optical fibers, Relays, Atmospheric Cherenkov telescopes, Tungsten, X-rays

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Proceedings Article | 20 August 2004 Paper

Paper

OPC development: variable CD-SEM bias through feature shape, feature density, and material composition

Kirk Miller, Katsuhiro Matsuyama, Ingo Schmitz, Dean Dawson

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557810

KEYWORDS: Optical proximity correction, Etching, 3D metrology, Metrology, Atomic force microscopy, Photomasks, Logic, Critical dimension metrology, Scanning electron microscopy, Semiconducting wafers

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Proceedings Article | 24 May 2004 Paper

Paper

Study of 3D metrology techniques as an alternative to cross-sectional analysis at the R&D level

Johann Foucher, Kirk Miller

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.534104

KEYWORDS: Semiconducting wafers, Silicon, Atomic force microscopy, Critical dimension metrology, Metrology, Etching, 3D metrology, Deconvolution, Lithography, Photomasks

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Proceedings Article | 24 May 2004 Paper

Paper

Characterization and control of sub-100-nm etch and lithography processes using atomic force metrology

Kirk Miller, Vincent Geiszler, Dean Dawson

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.533524

KEYWORDS: Etching, Metrology, 3D metrology, Semiconducting wafers, Critical dimension metrology, Lithography, Atomic force microscopy, Silicon, Algorithm development, Logic

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Proceedings Article | 27 December 2002 Paper

Paper

Back to square 9: a demonstration of 9-in. reticle capablilty

Kevin Cummings, Ludger Schneider-Stoermann, Ute Buttgereit, Mathias Irmscher, Dietmar Mueller, Peter Hudek, Dirk Beyer, Bernd Brendel, John Whittey, Benjamin Eynon, Jason Harsch, Chris Constantine, Kirk Miller

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467495

KEYWORDS: Reticles, Photomasks, Critical dimension metrology, Semiconducting wafers, Standards development, Scanning electron microscopy, Lithography, Metrology, Manufacturing, Chromium

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Proceedings Article | 16 July 2002 Paper

Paper

Tip characterization for CD-AFM: getting to 2 nm, 3 sigma

Kirk Miller, Ami Chand, Greg Dahlen, Bradley Todd

Proceedings Volume 4689, (2002) https://doi.org/10.1117/12.473412

KEYWORDS: Data modeling, Critical dimension metrology, Semiconducting wafers, Metrology, Etching, Shape analysis, Atomic force microscopy, Structural design, Calibration, Photomasks

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Proceedings Article | 16 July 2002 Paper

Paper

Die-scale wafer flatness: 3D imaging across 20 mm with nanometer-scale resolution

Kirk Miller, David Fong, Dean Dawson, Bradley Todd

Proceedings Volume 4689, (2002) https://doi.org/10.1117/12.473527

KEYWORDS: Semiconducting wafers, Metrology, Chemical mechanical planarization, Copper, Image resolution, Logic, System on a chip, Optical lithography, Stereoscopy, Lithography

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Proceedings Article | 16 July 2002 Paper

Paper

Atomic force microscopy for phase metrology of alternating-aperture phase-shift masks

Kirk Miller, Bradley Todd, Tim Pinkerton

Proceedings Volume 4689, (2002) https://doi.org/10.1117/12.473484

KEYWORDS: Etching, Atomic force microscopy, Metrology, Photomasks, Phase measurement, Quartz, Reticles, Phase shifts, Optical testing, Mask making

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Proceedings Article | 14 September 2001 Paper

Paper

Alternating PSM mask performance: a study of multiple fabrication technique results

Martin McCallum, Patricia Gabella, Gilbert Shelden, Kevin Kjoller, Edward Miller

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435771

KEYWORDS: Photomasks, Metrology, Etching, Reactive ion etching, Manufacturing, Reticles, Anisotropic etching, Image processing, Phase measurement, Fabrication

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Proceedings Article | 5 September 2001 Paper

Paper

Atomic force metrology and 3D modeling of microtrenching in etched photomask features

Bradley Todd, Kirk Miller, Thomas Pistor

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438409

KEYWORDS: Photomasks, Etching, Metrology, Quartz, Atomic force microscopy, Lithography, Reactive ion etching, Phase shifts, Wet etching, 3D modeling

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Proceedings Article | 22 August 2001 Paper

Paper

Atomic force metrology and 3D modeling of microtrenching in etched photomask features

Bradley Todd, Edward Miller, Thomas Pistor

Proceedings Volume 4344, (2001) https://doi.org/10.1117/12.436744

KEYWORDS: Photomasks, Etching, Metrology, Phase shifts, Atomic force microscopy, Quartz, Manufacturing, Lithography, Reactive ion etching, Optics manufacturing

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With the acceptance of etched phase shift photomasks by most major semiconductor manufacturers, it is necessary to build a significant number of these masks in a cost-effective and controlled manner. Optical methods of metrology used for many years in the photomask industry for binary masks are unsuitable for certain metrology applications related to etched phase shift photomask manufacture and repair. Atomic Force Metrology (AFM), Scanning Electron Microscope (SEM) metrology and optical methods, in combination, are now providing the necessary metrology tools to characterize etched phase shift masks and generate metrology for phase defect repair. Modeling methods such as electromagnetic modeling (EM) are providing insight into the effect of non- ideal processing on the final printed wafer image and the aerial image presented by a lithography system. This paper uses AFM metrology and EM modeling to explore the details of micro-trenching that occurs at the base of vertical walls on etched phase shift masks. Results of etch profiles obtained using AFM metrology are correlated with EM modeling of 320nm - 720nm etched structures in alternating aperture phase shift masks for use with KrF 4x reduction steppers. Three generically different etch processes were used to create the measured structures on six different masks. These six masks were manufactured by four different mask makers. The metrology and EM modeling results clearly differentiate each of the generic etch processes with the ICP + Iso etches showing 50% less micro-trenching relative to three of the four RIE-only etch processes. The simulation predicts the process window changes resulting from modeled micro-trenching relative to an ideal etch case. The models chosen for simulation represent the real etched results observed with the AFM. Comparisons of micro-trenching lengths measured during these experiments with the results of trenching bias across different etched space widths as reported by McCallum, et al. suggest that micro-trenching is a universal phenomenon occurring during quartz etches. It is proposed that micro- trenching more correctly defines the geometries responsible for trenching bias. Depth detail taken from the vicinity of an unusually shaped phase bump defect show the effect of local geometry on the extent to which trenching occurs. Trenching is more than 50% greater at the base of concave or acute defects as compared to convex defects. Further investigation of local trenching sheds light on the reason why phase bump defects near or touching a vertical trench wall appear more difficult to repair.

Proceedings Article | 22 January 2001 Paper

Paper

Automated atomic force metrology applications for alternating aperture phase-shift masks

Kirk Miller, Bradley Todd

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410682

KEYWORDS: Metrology, Quartz, Atomic force microscopy, Etching, Photomasks, Optical inspection, Process control, Scanning electron microscopy, Phase shifts, Optics manufacturing

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Proceedings Article | 1 December 1997 Paper

Paper

Photopumped gain narrowing experiments in oriented films of semiconducting polymers

Maria Diaz-Garcia, Cuiying Yang, Edward Miller, Kwanghee Lee, Alan Heeger

Proceedings Volume 3148, (1997) https://doi.org/10.1117/12.284179

KEYWORDS: Polymers, Polarization, Crystals, Absorption, Reflection, X-ray diffraction, Semiconductors, Diffraction, Anisotropy, Thin films

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Proceedings Article | 1 November 1997 Paper

Paper

Photoinduced changes in the complex index of refraction resulting from photoinduced charge transfer in conjugated polymer/fullerene blends

Edward Miller, Kwanghee Lee, Kobi Hasharoni, Jan Hummelen, Fred Wudl, Alan Heeger

Proceedings Volume 3142, (1997) https://doi.org/10.1117/12.279252

KEYWORDS: Absorption, Polymers, Fullerenes, Refraction, Reflectivity, Modulation, Nonlinear optics, Holography, Photorefractive polymers, Ultrafast phenomena

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Proceedings Article | 16 December 1996 Paper

Paper

Nonlinear optical changes in the complex index of refraction in conducting polymer-methanofullerene films evaluated by photoexcitation spectroscopy

Kwanghee Lee, Edward Miller, Niyazi Serdar Sariciftci, Jan Hummelen, Fred Wudl, Alan Heeger

Proceedings Volume 2854, (1996) https://doi.org/10.1117/12.262991

KEYWORDS: Absorption, Reflectivity, Polymers, Composites, Nonlinear optics, Polymer thin films, Spectroscopy, Adaptive optics, Refraction, Photorefractive polymers

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SPIE Journal Paper | 1 June 1990

Tabletop x-ray microscope using 8 keV zone plates

Richard Bionta, Elden Ables, Otis Clamp, Oliver Edwards, Peter Gabriele, Kirk Miller, Linda Ott, Kenneth Skulina, Ronald Tilley, T. Viada

OE, Vol. 29, Issue 06, (June 1990) https://doi.org/10.1117/12.10.1117/12.55632

KEYWORDS: Microscopes, X-rays, Zone plates, X-ray sources, Fabrication, Copper, Target detection, Photons, Spectroscopy

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Showing 5 of 18 publications

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