In this work we have manufactured and studied memristors based on TiN-TiO<sub>2</sub>-SiO<sub>2</sub>-W open sandwich structures on Si substrates. We have built an experimental setup and developed a technique of the memristor resistive switching investigations in the controlled oxygen atmosphere within the pressure range of 0.0001–750 Torr. The resistive switching of the studied memory elements was carried out using voltage pulses with varying limitation current and depending on the oxygen pressure. As a result, we have found that the memory element resistive switching to the highconductivity “ON” state takes place below a certain threshold oxygen pressure, which has a non-trivial dependence on the limitation current.
In this work we report a new approach to the fabrication of metallic nanowire and nanonet structures on a-Si/SiO<sub>2</sub>/Si substrates by combine plasma etching processes. For the formation of Pt nanostructures we used a controlled two-step plasma etching in C<sub>4</sub>F<sub>8</sub>/Ar and SF<sub>6</sub> plasma, which resulted in a self-formation of fluorocarbon nanowires and nanonets. Then, we used these nanostructures as nanoscale templates for 10 nm thin metallic nanowires, which were obtained with magnetron Pt film deposition, Ar plasma sputtering and Pt redeposition.
In this work application of x-ray total external reflection method for the determination of the porosity value of PbTe and
PbSe epitaxial films on silicon substrates subjected to anodic electrochemical etching in a Norr electrolyte was carried
out. It is shown that the porosity values of the films can be in the range of 10-68% depending on the anodizing
conditions. Triple-crystal x-ray diffractometry method was utilized for the estimation of quantitative characteristics of
the pore dimensions along different directions. Nanometer-range pore dimensions and shape are estimated.
Conference Committee Involvement (1)
The International Conference on Micro- and Nano-Electronics 2018