Quantum Cascade (QC) wafer quality testing requires intensive processing and characterization. Here, we demonstrate a
minimally invasive technique that gives rapid feedback on wafer quality. A mesa is fabricated using only a single etch
and metallization step. The device is electrically pumped and optically and electrically characterized. The peak
wavelength position and the full width at half maximum (FWHM) as a function of applied electric field, turn-on voltage,
maximum operating current density and threshold current density of the mesas are measured. Results of the mesa and
lasers processed from the same wafer are compared and differed by less than 10 %.