Dr. Elyakim Kassel Profile

Dr. Elyakim Kassel

at KLA Israel

SPIE Involvement:

Author

Publications (12)

Proceedings Article | 28 March 2008 Paper

MAGIC: a European program to push the insertion of maskless lithography

L. Pain, B. Icard, S. Tedesco, B. Kampherbeek, G. Gross, C. Klein, H. Loeschner, E. Platzgummer, R. Morgan, S. Manakli, J. Kretz, C. Holhe, K.-H. Choi, F. Thrum, E. Kassel, W. Pilz, K. Keil, J. Butschke, M. Irmscher, F. Letzkus, P. Hudek, A. Paraskevopoulos, P. Ramm, J. Weber

Proceedings Volume 6921, 69211S (2008) https://doi.org/10.1117/12.772472

KEYWORDS: Semiconducting wafers, Lithography, Photomasks, Manufacturing, Electron beams, Electron beam lithography, Nanofabrication, Computed tomography, Prototyping, Maskless lithography

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Proceedings Article | 5 April 2007 Paper

45nm design rule in-die overlay metrology on immersion lithography processes

Yu-Hao Shih, George KC Huang, Chun-Chi Yu, Mike Adel, Chin-Chou Kevin Huang, Pavel Izikson, Elyakim Kassel, Sameer Mathur, Chien-Jen Huang, David Tien, Yosef Avrahamov

Proceedings Volume 6518, 651831 (2007) https://doi.org/10.1117/12.711754

KEYWORDS: Overlay metrology, Metrology, Semiconducting wafers, Scanners, Immersion lithography, Statistical modeling, Optical lithography, Data modeling, Optical alignment, Reticles

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Proceedings Article | 24 March 2006 Paper

AIM technology for nonvolatile memories microelectronics devices

Pier Luigi Rigolli, Laura Rozzoni, Catia Turco, Umberto Iessi, Marco Polli, Elyakim Kassel, Pavel Izikson, Yosef Avrahamov

Proceedings Volume 6152, 61524C (2006) https://doi.org/10.1117/12.656485

KEYWORDS: Overlay metrology, Metrology, Image segmentation, Front end of line, Semiconducting wafers, Chemical mechanical planarization, Metals, Lithography, Scanning electron microscopy, Scanners

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Proceedings Article | 24 March 2006 Paper

In-field overlay uncertainty contributors: a back end study

Mike Adel, Aviv Frommer, Elyakim Kassel, Pavel Izikson, Philippe Leray, Bernd Schulz, Rolf Seltmann, Jens Busch

Proceedings Volume 6152, 615213 (2006) https://doi.org/10.1117/12.656467

KEYWORDS: Reticles, Overlay metrology, Scanners, Data modeling, Semiconducting wafers, Metrology, Chemical mechanical planarization, Manufacturing, Polishing, Optical alignment

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Proceedings Article | 10 May 2005 Paper

In field overlay uncertainty contributors

Aviv Frommer, Elyakim Kassel, Pavel Izikson, Mike Adel, Philippe Leray, Bernd Schulz

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.599397

KEYWORDS: Reticles, Overlay metrology, Semiconducting wafers, Scanners, Dysprosium, Metrology, Data modeling, Personal protective equipment, Lithography, Manufacturing

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Proceedings Article | 10 May 2005 Paper

Overlay measurement accuracy verification using CD-SEM and application to the quantification of WIS caused by BARC

Laurent Lecarpentier, Vincent Vachellerie, Elyakim Kassel, Yosef Avrahamov, Chin-Chou Huang, Frank Felten, Marco Polli, Aurelien Feneyrou, Philippe Thony, Stephane Guillot

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.610662

KEYWORDS: Overlay metrology, Semiconducting wafers, Etching, Reticles, Scanning electron microscopy, Error analysis, Metrology, Detection and tracking algorithms, Scanners, Inspection

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Proceedings Article | 24 May 2004 Paper

Improved overlay metrology device correlation on 90-nm logic processes

Atsushi Ueno, Kouichirou Tsujita, Hiroyuki Kurita, Yasuhisa Iwata, Mark Ghinovker, Jorge Poplawski, Elyakim Kassel, Mike Adel

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.534522

KEYWORDS: Overlay metrology, Personal protective equipment, Scanning electron microscopy, Metrology, Scanners, Lithography, Optical design, Metals, Semiconducting wafers, Monochromatic aberrations

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Proceedings Article | 24 May 2004 Paper

A comparison of methods for in-chip overlay control at the 65-nm node

John Robinson, Mark Stakely, Jorge Poplawski, Pavel Izikson, Elyakim Kassel, Mike Adel

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.534510

KEYWORDS: Overlay metrology, Metrology, Scanners, Error analysis, Reticles, Semiconducting wafers, Personal protective equipment, Lithography, Data modeling, Data acquisition

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Proceedings Article | 24 May 2004 Paper

Test of a new sub-90-nm DR overlay mark for DRAM production

Stefan Gruss, Ansgar Teipel, Carsten Fuelber, Elyakim Kassel, Mike Adel, Mark Ghinovker, Pavel Izikson

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.534518

KEYWORDS: Overlay metrology, Aluminum, Carbon, Photomasks, Semiconducting wafers, Metrology, Error analysis, Etching, Metals, Reticles

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Proceedings Article | 2 June 2003 Paper

Performance study of new segmented overlay marks for advanced wafer processing

Mike Adel, John Allgair, David Benoit, Mark Ghinovker, Elyakim Kassel, C. Nelson, John Robinson, Gary Seligman

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.483477

KEYWORDS: Overlay metrology, Semiconducting wafers, Metrology, Optical design, Data modeling, Lithography, Metals, Image segmentation, Optical lithography, Imaging metrology

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Proceedings Article | 2 June 2003 Paper

Characterization of overlay mark fidelity

Mike Adel, Mark Ghinovker, Jorge Poplawski, Elyakim Kassel, Pavel Izikson, Ivan Pollentier, Philippe Leray, David Laidler

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.483430

KEYWORDS: Overlay metrology, Semiconducting wafers, Reticles, Chemical mechanical planarization, Statistical analysis, Error analysis, Silicon, Manufacturing, Optical lithography, Metrology

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In this publication we introduce a new metric for process robustness of overlay metrology in microelectronic manufacturing. By straightforward statistical analysis of overlay metrology measurements on an array of adjacent, nominally identical overlay targets the Overlay Mark Fidelity (OMF) can be estimated. We present the results of such measurements and analysis on various marks, which were patterned using a DUV scanner. The same reticle set was used to pattern wafers on different process layers and process conditions. By appropriate statistical analysis, the breakdown of the total OMF into a reticle-induced OMF component and a process induced OMF component was facilitated. We compare the OMF of traditional box-in-box overlay marks with that of new gratingbased overlay marks and show that in all cases the grating marks are superior. The reticle related OMF showed an improvement of 30 % when using the new grating-based overlay mark. Furthermore, in a series of wafers run through an STI-process with different Chemical Mechanical Polish (CMP) times, the random component of the OMF of the new grating-based overlay mark was observed to be 40% lower and 50% less sensitive to process variation compared with Box in Box marks. These two observations are interpreted as improved process robustness of the grating mark over box in box, specifically in terms of reduced site by site variations and reduced wafer to wafer variations as process conditions change over time. Overlay Mark Fidelity, as defined in this publication, is a source of overlay metrology uncertainty, which is statistically independent of the standard error contributors, i.e. precision, TIS variability, and tool to tool matching. Current overlay metrology budgeting practices do not take this into consideration when calculating total measurement uncertainty (TMU). It is proposed that this be reconsidered, given the tightness of overlay and overlay metrology budgets at the 70 nm design rule node and below.

Proceedings Article | 16 July 2002 Paper

Overlay accuracy: a metal layer study

Andrew Habermas, Bradley Ferguson, Joel Seligson, Elyakim Kassel, Pavel Izikson

Proceedings Volume 4689, (2002) https://doi.org/10.1117/12.473466

KEYWORDS: Etching, Metals, Semiconducting wafers, Overlay metrology, Atomic force microscopy, Diffractive optical elements, Manufacturing, Metrology, Chemical mechanical planarization, Tolerancing

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Showing 5 of 12 publications

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