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Dr. Emanuele Baracchi
Mask Technology Manager at STMicrolectronics
SPIE Involvement:
Author
Publications (5)
Proceedings Article | 16 August 2002 Paper
Mask CD uniformity impact during incoming quality control
Proceedings Volume 4764, (2002) https://doi.org/10.1117/12.479361
KEYWORDS: Photomasks, Critical dimension metrology, Semiconducting wafers, Inspection, Reticles, Control systems, Quality systems, Metrology, Wafer inspection, Cadmium
Proceedings Article | 11 March 2002 Paper
Using high-resolution (0.13 um) UV-based reticle inspection for CD uniformity in incoming quality control
Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458308
KEYWORDS: Photomasks, Critical dimension metrology, Inspection, Semiconducting wafers, Reticles, Control systems, Reliability, Process control, Cadmium, Databases
Proceedings Article | 9 April 2001 Paper
Quality assessment of advanced photomasks using the Q-CAP cluster tool
Kai Peter, Thomas Schaetz, Volodymyr Ordynskyy, Roman Liebe, Martin Verbeek, Gerald Galan, Emanuele Baracchi, Corinne Miramond, Hans-Juergen Brueck, Gerd Scheuring, Thomas Engel, Yair Eran, Karl Sommer, Hans Hartmann
Proceedings Volume 4349, (2001) https://doi.org/10.1117/12.425084
KEYWORDS: Photomasks, Semiconducting wafers, Databases, Inspection, Optical proximity correction, Defect inspection, Data conversion, Wafer inspection, Computed tomography, Lithographic illumination
Proceedings Article | 19 July 2000 Paper
Cluster tool solution for fabrication and qualification of advanced photomasks
Thomas Schaetz, Hans Hartmann, Kai Peter, Frederic Lalanne, Olivier Maurin, Emanuele Baracchi, Corinne Miramond, Hans-Juergen Brueck, Gerd Scheuring, Thomas Engel, Yair Eran, Karl Sommer
Proceedings Volume 4066, (2000) https://doi.org/10.1117/12.392088
KEYWORDS: Photomasks, Databases, Critical dimension metrology, Defect inspection, Semiconducting wafers, Manufacturing, Optical proximity correction, Image processing, Inspection, Data storage
Proceedings Article | 30 December 1999 Paper
Definition of new quality criteria and assessment means for masks at 150-nm design rules and beyond
Emanuele Baracchi, Hans-Juergen Brueck, Thomas Engel, Yair Eran, Frederic Lalanne, Olivier Maurin, Volodymyr Ordynskyy, Thomas Schaetz, Karl Sommer
Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373312
KEYWORDS: Photomasks, Optical proximity correction, Inspection, Reticles, Lithography, Software development, Image quality, Databases, Printing, Image processing
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