Dr. Eric K. Lin
Group Leader, Electronics Materials at National Institute of Standards and Technology
SPIE Involvement:
Conference Program Committee | Author
Publications (45)

PROCEEDINGS ARTICLE | April 1, 2009
Proc. SPIE. 7273, Advances in Resist Materials and Processing Technology XXVI
KEYWORDS: Lithography, Switches, Deep ultraviolet, Polymers, Diffusion, Photoresist materials, Extreme ultraviolet, Extreme ultraviolet lithography, Line edge roughness, Photoresist developing

PROCEEDINGS ARTICLE | April 15, 2008
Proc. SPIE. 6923, Advances in Resist Materials and Processing Technology XXV
KEYWORDS: FT-IR spectroscopy, Switches, Polymers, Glasses, Diffusion, Image resolution, Photoresist materials, Solids, Extreme ultraviolet, Temperature metrology

PROCEEDINGS ARTICLE | March 28, 2008
Proc. SPIE. 6921, Emerging Lithographic Technologies XII
KEYWORDS: Electron beam lithography, Optical lithography, Scattering, Skin, X-rays, Dielectrics, Silicon, Reflectivity, Picosecond phenomena, Nanoimprint lithography

PROCEEDINGS ARTICLE | March 25, 2008
Proc. SPIE. 6922, Metrology, Inspection, and Process Control for Microlithography XXII
KEYWORDS: Thin films, Metrology, Data modeling, Scattering, Polymers, X-rays, X-ray sources, Silicon, Reflectivity, Picosecond phenomena

PROCEEDINGS ARTICLE | March 24, 2008
Proc. SPIE. 6922, Metrology, Inspection, and Process Control for Microlithography XXII
KEYWORDS: Diffraction, Metrology, Scattering, Satellites, X-rays, X-ray diffraction, Collimation, Line width roughness, Synchrotrons, Line edge roughness

PROCEEDINGS ARTICLE | March 24, 2008
Proc. SPIE. 6922, Metrology, Inspection, and Process Control for Microlithography XXII
KEYWORDS: Diffraction, Scattering, Sensors, X-rays, Laser scattering, Extreme ultraviolet, Line width roughness, Extreme ultraviolet lithography, Critical dimension metrology, Line edge roughness

Showing 5 of 45 publications
Conference Committee Involvement (2)
Organic Field-Effect Transistors V
13 August 2006 | San Diego, California, United States
Organic Field-Effect Transistors IV
31 July 2005 | San Diego, California, United States
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