Mr. Eric R. Poortinga Profile

Eric R. Poortinga

Product Manager and Sales Representative

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Publications (13)

Proceedings Article | 23 September 2009 Paper

New analysis tools and processes for mask repair verification and defect disposition based on AIMS images

Rigo Richter, Eric Poortinga, Thomas Scheruebl

Proceedings Volume 7488, 74882V (2009) https://doi.org/10.1117/12.835948

KEYWORDS: Photomasks, Image analysis, Image processing, Semiconducting wafers, Error analysis, Manufacturing, Analytical research, Tolerancing, Critical dimension metrology, Standards development

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Proceedings Article | 11 May 2009 Paper

Semi-automated repair verification of aerial images

Rigo Richter, Eric Poortinga, Thomas Schereubl

Proceedings Volume 7379, 73792D (2009) https://doi.org/10.1117/12.824327

KEYWORDS: Photomasks, Image analysis, Metrology, Semiconducting wafers, Manufacturing, Error analysis, Analytical research, Critical dimension metrology, Standards development, Lithography

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Proceedings Article | 1 November 2007 Paper

A user-programmable link between data preparation and mask manufacturing equipment

Mohammed Saad, Steffen Schulze, Arne Seyfarth, Eric Poortinga, Weidong Zhang, Emile Sahouria, Grant Davis

Proceedings Volume 6730, 67304H (2007) https://doi.org/10.1117/12.746988

KEYWORDS: Metrology, Photomasks, Computer programming, Manufacturing, Interfaces, Manufacturing equipment, Databases, Visualization, Optical proximity correction, Data modeling

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Proceedings Article | 25 May 2007 Paper

Automated aerial image based CD metrology initiated by pattern marking with photomask layout data

Eui Hee Jung, Arne Seyfarth, Hans van Doornmalen, Sun Young Choi, Grant Davis, Eric Poortinga

Proceedings Volume 6607, 66072A (2007) https://doi.org/10.1117/12.728993

KEYWORDS: Photomasks, Image processing, Critical dimension metrology, Semiconducting wafers, Metrology, Design for manufacturing, Visualization, Lithography, Scanning electron microscopy, Interfaces

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Proceedings Article | 3 May 2007 Paper

Investigation of hyper-NA scanner emulation for photomask CDU performance

Frank Sundermann, Eric Poortinga, Will Conley, Thomas Scheruebl

Proceedings Volume 6533, 653307 (2007) https://doi.org/10.1117/12.736325

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Scanners, Metrology, Lithography, Data acquisition, Manufacturing, Photoresist processing, Image acquisition

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As the semiconductor industry moves toward immersion lithography using numerical apertures above 1.0 the quality of the photomask becomes even more crucial. Photomask specifications are driven by the critical dimension (CD) metrology within the wafer fab. Knowledge of the CD values at resist level provides a reliable mechanism for the prediction of device performance. Ultimately, tolerances of device electrical properties drive the wafer linewidth specifications of the lithography group. Staying within this budget is influenced mainly by the scanner settings, resist process, and photomask quality. Tightening of photomask specifications is one mechanism for meeting the wafer CD targets. The challenge lies in determining how photomask level metrology results influence wafer level imaging performance. Can it be inferred that photomask level CD performance is the direct contributor to wafer level CD performance? With respect to phase shift masks, criteria such as phase and transmission control are generally tightened with each technology node. Are there other photomask relevant influences that effect wafer CD performance? A comprehensive study is presented supporting the use of scanner emulation based photomask CD metrology to predict wafer level within chip CD uniformity (CDU). Using scanner emulation with the photomask can provide more accurate wafer level prediction because it inherently includes all contributors to image formation related to the 3D topography such as the physical CD, phase, transmission, sidewall angle, surface roughness, and other material properties. Emulated images from different photomask types were captured to provide CD values across chip. Emulated scanner image measurements were completed using an AIMS^TM45-193i with its hyper-NA, through-pellicle data acquisition capability including the Global CDU Map^TM software option for AIMS^TM tools. The through-pellicle data acquisition capability is an essential prerequisite for capturing final CDU data (after final clean and pellicle mounting) before the photomask ships or for re-qualification at the wafer fab. Data was also collected on these photomasks using a conventional CD-SEM metrology system with the pellicles removed. A comparison was then made to wafer prints demonstrating the benefit of using scanner emulation based photomask CD metrology.

Proceedings Article | 20 October 2006 Paper

Improved prediction of across chip linewidth variation (ACLV) with photomask aerial image CD metrology

Eric Poortinga, Bryan Kasprowicz, Will Conley, Lloyd Litt, Axel Zibold, Michael Cangemi

Proceedings Volume 6349, 63490N (2006) https://doi.org/10.1117/12.686449

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Metrology, Scanners, Photoresist processing, Data acquisition, Lithography, Image acquisition, Manufacturing

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Critical dimension (CD) metrology is an important process step within the wafer fab. Knowledge of the CD values at resist level provides a reliable mechanism for the prediction of device performance. Ultimately tolerances of device electrical performance drive the wafer linewidth specifications of the lithography group. Staying within this budget is influenced mainly by the scanner settings, resist process and photomask quality. At the 65nm node the ITRS roadmap calls for sub-3nm photomask CD uniformity to support a sub-3nm wafer level CD uniformity. Meeting these targets has proven to be a challenge. What can be inferred from these specifications is that photomask level CD performance is the direct contributor to wafer level CD performance. With respect to phase shift masks, criteria such as phase and transmission control are also tightened with each technology node. A comprehensive study is presented supporting the use of photomask aerial image emulation CD metrology to predict wafer level Across Chip Linewidth Variation (ACLV). Using the aerial image can provide more accurate wafer level prediction because it inherently includes all contributors to image formation such as the physical CD, phase, transmission, sidewall angle, and other material properties. Aerial images from different photomask types were captured to provide across chip CD values. Aerial image measurements were completed using an AIMS^TMfab193i with its through-pellicle data acquisition capability including the Global CDU Map^TM software option for AIMS^TM tools. The through-pellicle data acquisition capability is an essential prerequisite for capturing final CD data (after final clean and pellicle mounting) before the photomask ships or for re-qualification at the wafer fab. Data was also collected on these photomasks using a conventional CD-SEM metrology system with the pellicles removed. A comparison was then made to wafer prints demonstrating the benefit of using aerial image CD metrology.

Proceedings Article | 21 June 2006 Paper

Printability study with polarization based AIMS fab 193i to investigate mask polarization effects

Norbert Rosenkranz, Thomas Scherübl, Rainer Schmid, Eric Poortinga, Ulrich Stroessner, Wolfgang Harnisch, Axel Zibold

Proceedings Volume 6281, 628108 (2006) https://doi.org/10.1117/12.692728

KEYWORDS: Polarization, Photomasks, Scanners, Reticles, Semiconducting wafers, Transmittance, Phase shifts, Printing, Immersion lithography, Semiconductors

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Proceedings Article | 28 June 2005 Paper

Advances with the new AIMS fab 193 2nd generation: a system for the 65 nm node including immersion

R. Schmid, H. v. Doornmalen, E. Poortinga, Axel Zibold, W. Harnisch, T. Scherubl

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617508

KEYWORDS: Photomasks, Scanners, Semiconducting wafers, Polarization, Liquids, Reticles, Critical dimension metrology, Binary data, Imaging systems, Refractive index

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Proceedings Article | 6 December 2004 Paper

AAPSM repair utilizing transparent etch stop layer

Matthew Lassiter, Marc Cangemi, Eric Poortinga, Michael Cangemi, Darren Taylor

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.566596

KEYWORDS: Etching, Quartz, Photomasks, Manufacturing, Inspection, Phase shifts, Lithography, Software development, Binary data, Scanning electron microscopy

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Proceedings Article | 20 August 2004 Paper

Investigation of quartz defect printability at the 65-nm node

Darren Taylor, Eric Poortinga

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557786

KEYWORDS: Quartz, Photomasks, Etching, Optical lithography, Phase shifts, Lithography, 193nm lithography, Semiconducting wafers, Inspection, Defect inspection

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Proceedings Article | 17 December 2003 Paper

Phase degradation characteristics of programmed AAPSM defects with automatic inspection tool sensitivity

Eric Poortinga, Darren Taylor

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518065

KEYWORDS: Inspection, Photomasks, Quartz, Defect inspection, Manufacturing, Etching, Semiconducting wafers, Phase shifting, Scanning electron microscopy, Optical lithography

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Proceedings Article | 28 August 2003 Paper

Automatic inspection tool sensitivity with characterization of AAPSM defects

Bryan Reese, Darren Taylor, Blake Gibson, Eric Poortinga

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504204

KEYWORDS: Inspection, Defect inspection, Photomasks, Scanning electron microscopy, Manufacturing, Phase shifting, Glasses, 193nm lithography, Lithography, Etching

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Proceedings Article | 22 January 2001 Paper

Defect dispositioning using mask printability on attenuated phase-shift production photomasks

Benjamin Eynon, Eric Poortinga, Justin Novak, Anja Rosenbusch, Yair Eran

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410771

KEYWORDS: Photomasks, Opacity, Critical dimension metrology, Lithography, Semiconducting wafers, Phase shifts, Optical proximity correction, Inspection, Scattering, Resolution enhancement technologies

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Showing 5 of 13 publications

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