A model is presented that successfully predicts electro-optical properties of
Lanthanide materials, irrespective whether these materials are inorganic or
organic, diluted or concentrated, metallic, semi-conducting or insulating. The
model is firmly based on recent experimental data revealing that the variation
in 4f and 5d energies relative to the valence band over the Ln series (La, Ce,
Pr,.. ,Lu) is universal. Application to LnS and the oxides LnO, Ln2O3 and LnO2
demonstrates its potential by correctly predicting the ground state electron
configuration, metallic, insulating or semi-conducting behavior, Ln ion valence
state and band-gap of these model Ln systems.
A method that has proven succesful in locating the energy levels of divalent and trivalent lanthanide ions (Ce, Pr,...,
Eu,...Yb, Lu) in wide band gap inorganic compounds like YPO4 and CaF2 is applied to locate lanthanide levels in the
wideband semiconductors GaN, AlN, their solid solutions AlxGa1-xN, and ZnO. The proposed schemes provide a
description of relevant optical and luminescence properties of these lanthanide doped semiconductors. Especially, the
relation between thermal quenching of Tb3+ emission and the location of the energy levels is explained.
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