We develop a theory of terahertz emission from a femtosecond laser pulse with tilted intensity front propagating through
a prism-shaped electro-optic crystal. The theory accounts for transient effects at the entrance boundary of the crystal and
allows us to explore the dynamics of terahertz generation in the crystal. In particular, transverse walk-off length is
introduced as an important parameter of the terahertz field formation process. Two typical experimental situations -
LiNbO3 excited with Ti:sapphire laser (0.8 μm wavelength) at room and cryogenic temperatures - are considered, and
new schemes, in which GaAs is excited at 1.8 and 3.5 μm, are proposed and analyzed. The parameters of the laser pulse
(transverse size, tilt angle, and pulse duration) and crystal size maximizing the terahertz yield are calculated.
The method of spectral selection, based on small optical connection between tilted short Fabry-Perot interferometer and
semiconductor optical amplifier has been proposed. It was shown, that short Fabry-Perot interferometer under certain
inclination reflects back in narrowband lines, typical for transmitted spectrum. This effect has been used for creation
swept semiconductor laser with wavelength tuning range 25 nm at central wavelength 1290 nm and coherence length 8 mm.
The method of spectral selection, based on interaction between weakly matched optical amplifier waveguide and Fabry -
Perot interferometer modes has been proposed. It was shown, that in certain configuration Fabry - Perot interferometer
reflects narrowband lines, typical for transmitted spectrum. This effect has been used for creation wavelength tunable
laser with tuning range 25 nm at central wavelength 1290 nm, coherence length 8 mm.