In this paper, we discuss the accuracy of resist model calibration under various aspects. The study is done based on an
extensive OPC dataset including hundreds of CD values obtained with immersion lithography for the sub-30 nm
node. We address imaging aspects such as the role of Jones matrices, laser bandwidth and mask bias. Besides we focus
on the investigation on metrology effects arising from SEM charging and uncertainty between SEM image and feature
topography. For theses individual contributions we perform a series of resist model calibrations to determine their
importance in terms of relative RMSE (Root Mean Square Error) and it is found that for the sub-30 nm node they all are
not negligible for accurate resist model calibration.