Proc. SPIE. 10514, High-Power Diode Laser Technology XVI
KEYWORDS: Semiconductor lasers, Diodes, Laser applications, Laser processing, Reliability, Fiber lasers, High power lasers, Control systems, Laser welding, Fiber coupled lasers, High power diode lasers
High-power diode lasers are nowadays well established manufacturing tools in high power materials processing, mainly for tactile welding, surface treatment and cladding applications. Typical beam parameter products (BPP) of such lasers range from 30 to 50 mm·mrad at several kilowatts of output power. TRUMPF offers a product line of diode lasers to its customers ranging from 150 W up to 6 kW of output power. These diode lasers combine high reliability with small footprint and high efficiency. However, up to now these lasers are limited in brightness due to the commonly used spatial and coarse spectral beam combining techniques. Recently diode lasers with enhanced brightness have been presented by use of dense wavelength multiplexing (DWM). In this paper we report on TRUMPF’s diode lasers utilizing DWM. We demonstrate a 2 kW and a 4 kW system ideally suited for fine welding and scanner welding applications. The typical laser efficiency is in the range of 50%. The system offers plug and play exchange of the fiber beam delivery cable, multiple optical outputs and integrated cooling in a very compact package. An advanced control system offers flexible integration in any customer’s shop floor environment and includes industry 4.0 capabilities (e.g. condition monitoring and predictive maintenance).
Semiconductor lasers are ideal sources for efficient electrical-to-optical power conversion and for many applications where their small size and potential for low cost are required to meet market demands. Yellow lasers find use in a variety of bio-related applications, such as photocoagulation, imaging, flow cytometry, and cancer treatment. However, direct generation of yellow light from semiconductors with sufficient beam quality and power has so far eluded researchers. Meanwhile, tapered semiconductor lasers at near-infrared wavelengths have recently become able to provide neardiffraction- limited, single frequency operation with output powers up to 8 W near 1120 nm.
We present a 1.9 W single frequency laser system at 562 nm, based on single pass cascaded frequency doubling of such a tapered laser diode. The laser diode is a monolithic device consisting of two sections: a ridge waveguide with a distributed Bragg reflector, and a tapered amplifier. Using single-pass cascaded frequency doubling in two periodically poled lithium niobate crystals, 1.93 W of diffraction-limited light at 562 nm is generated from 5.8 W continuous-wave infrared light. When turned on from cold, the laser system reaches full power in just 60 seconds. An advantage of using a single pass configuration, rather than an external cavity configuration, is increased stability towards external perturbations. For example, stability to fluctuating case temperature over a 30 K temperature span has been demonstrated. The combination of high stability, compactness and watt-level power range means this technology is of great interest for a wide range of biological and biomedical applications.
In this paper, we report on the recent development of a novel low coherence interferometry technique for the purpose of 3D-topography measurements. It combines the well established techniques of spectral-interferometry (SI) and chromatic-confocal microscopy (CCM). Measuring the optical interference in the spectral-domain allows for the detection of a reflecting or scattering object's depth position, without the necessity of a mechanical axial-scan. Focusing the white-light detection field with a microscope objective combined with a diffractive optical element leads to an expansion of the axial-range of the sensor beyond the limited depth-of-focus, imposed by the numerical aperture (NA) of the focusing objective. Focusing with a high NA objective and confocally filtering the detection light field causes the reduction of the lateral dimension of the area sampled upon the object. By this, the lateral resolution of the sensor is enhanced and due to the high NA, a high light collection-efficiency is achieved as well. The attained interferometric signals consist of high-contrast wavelets, measured in the optical-frequency domain. The depth position of an investigated point of the object is given by the modulation-period of the wavelets. Therefore, unlike in CCM, positionwavelength referencing is not necessary.
In the present paper, we address a hybrid technique which combines the method of spectral interferometry with chromatic confocal microscopy. On the basis of some proof-of-principle experiments, it is shown that with this new concept, the axial detection range of the sensor is decoupled from the limited depth-of-focus of the employed microscope objective, and a high numerical aperture objective can be employed for detection. The attained interferometric signals consist of high-contrast wavelets, measured in the λ-domain. The position of an investigated object is measured by analyzing the spectral-phase of the attained wavelets. In particular, chirp-effects as well as the significant role of confocal filtering are discussed.