Dr. Fan Ren Profile

Dr. Fan Ren

Distinguished Professor at Univ of Florida

SPIE Involvement:

Fellow status | Conference Program Committee | Author

Publications (23)

PROCEEDINGS ARTICLE | February 23, 2018

Radiation and process-induced damage in Ga2O3

Proc. SPIE. 10532, Gallium Nitride Materials and Devices XIII

KEYWORDS: Etching, Dry etching, Annealing, Ions, Gallium nitride, Diodes, Transistors, Field effect transistors, Gallium, Plasma

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PROCEEDINGS ARTICLE | April 19, 2017

Use of sub-bandgap optical pumping to identify defects in AlGaN/GaN high electron mobility transistors (Conference Presentation)

Proc. SPIE. 10104, Gallium Nitride Materials and Devices XII

KEYWORDS: Satellites, Nondestructive evaluation, Gallium nitride, Telecommunications, Transistors, Field effect transistors, Satellite communications, Optical pumping, Advanced radar, Piezoelectric effects

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PROCEEDINGS ARTICLE | April 27, 2015

Enhancement of AlGaN/GaN high-electron mobility transistor off-state drain breakdown voltage via backside proton irradiation

Proc. SPIE. 9363, Gallium Nitride Materials and Devices X

KEYWORDS: Etching, Interfaces, Silicon, Computer simulations, Gallium nitride, Transistors, Field effect transistors, Virtual reality, TCAD, Floods

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PROCEEDINGS ARTICLE | March 27, 2013

The effects of proton irradiation on the reliability of InAlN/GaN high electron mobility transistors

Proc. SPIE. 8625, Gallium Nitride Materials and Devices VIII

KEYWORDS: Electrodes, Metals, Reliability, Materials science, Gallium nitride, Sapphire, Transistors, Field effect transistors, Silicon carbide, Heterojunctions

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PROCEEDINGS ARTICLE | October 15, 2012

Pushing or pulling droplets on ZnO nanorods with an UV light

Proc. SPIE. 8463, Nanoengineering: Fabrication, Properties, Optics, and Devices IX

KEYWORDS: Thin films, Nanoengineering, Quartz, Ultraviolet radiation, Zinc, Thermal effects, Zinc oxide, Liquids, Absorption, Nanorods

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PROCEEDINGS ARTICLE | May 26, 2011

Characteristics of CO sensors made by polar and nonpolar ZnO nanowires gated AlGaN/GaN high electron mobility transistor

Proc. SPIE. 8024, Advanced Environmental, Chemical, and Biological Sensing Technologies VIII

KEYWORDS: Sensors, Crystals, Chemical vapor deposition, Oxygen, Gallium nitride, Transistors, Field effect transistors, Zinc oxide, Carbon monoxide, Nanowires

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PROCEEDINGS ARTICLE | May 5, 2010

AlGaN/GaN high-electron mobility transistor-based sensors for environmental and bio-applications

Proc. SPIE. 7679, Micro- and Nanotechnology Sensors, Systems, and Applications II

KEYWORDS: Carbon dioxide, Sensors, Molecules, Ions, Mercury, Field effect transistors, Zinc oxide, Signal detection, Environmental sensing, Nanorods

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PROCEEDINGS ARTICLE | February 15, 2010

Oxide thin film transistors on novel flexible substrates

Proc. SPIE. 7603, Oxide-based Materials and Devices

KEYWORDS: Semiconductors, Oxides, Thin films, Transparency, Sputter deposition, Glasses, Dielectrics, Oxygen, Transistors, Zinc oxide

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PROCEEDINGS ARTICLE | February 19, 2009

AlGaN/GaN HEMT And ZnO nanorod-based sensors for chemical and bio-applications

Proc. SPIE. 7216, Gallium Nitride Materials and Devices IV

KEYWORDS: Gas sensors, Glucose, Sensors, Electrodes, Biosensors, Field effect transistors, Zinc oxide, Signal detection, Liquids, Nanorods

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PROCEEDINGS ARTICLE | February 16, 2009

Improved surface morphology and edge definition for ohmic contacts to AlGaN/GaN heterostructures

Proc. SPIE. 7216, Gallium Nitride Materials and Devices IV

KEYWORDS: Annealing, Nickel, Resistance, Surface roughness, Chromium, Scanning electron microscopy, Gallium nitride, Aluminum, Molybdenum, Heterojunctions

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PROCEEDINGS ARTICLE | April 30, 2008

Wide bandgap nanowire sensors

Proc. SPIE. 6959, Micro (MEMS) and Nanotechnologies for Space, Defense, and Security II

KEYWORDS: Gold, Glucose, Sensors, Electrodes, Metals, Hydrogen, Field effect transistors, Zinc oxide, Nanorods, Nanowires

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PROCEEDINGS ARTICLE | February 15, 2008

P-type ZnO thin films via phosphorus doping

Proc. SPIE. 6895, Zinc Oxide Materials and Devices III

KEYWORDS: Semiconductors, Thin films, Annealing, Hydrogen, Doping, Oxygen, Capacitance, Phosphorus, Zinc oxide, Pulsed laser deposition

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PROCEEDINGS ARTICLE | September 25, 2007

Wide bandgap nanowire sensors

Proc. SPIE. 6769, Nanosensing: Materials, Devices, and Systems III

KEYWORDS: Sensors, Electrodes, Hydrogen, Resistance, Platinum, Palladium, Zinc oxide, Indium nitride, Nanorods, Nanowires

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SPIE Journal Paper | July 1, 2007

Flip bonding with SU-8 for hybrid AlxGa1-xAs-polysilicon MEMs-tunable filter

Ochoa, Edward , Starman, Lavern , Bedford, Robert , Nelson, Thomas , Ehret, James , Harvey, Michael , Anderson, Travis , Ren, Fan

JM3 Vol. 6 Issue 03

KEYWORDS: Gold, Actuators, Aluminum, Gallium, Reflectors, Microelectromechanical systems, Silicon, Distributed Bragg reflectors, Optical lithography, Chemistry

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PROCEEDINGS ARTICLE | September 12, 2006

Effect of argon annealing of phosphorus-doped ZnO and (Zn,Mg)O thin-films-grown pulsed laser deposition

Proc. SPIE. 6337, Sixth International Conference on Solid State Lighting

KEYWORDS: Magnesium, Argon, Annealing, Crystals, Zinc, Doping, Oxygen, Phosphorus, Zinc oxide, Pulsed laser deposition

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PROCEEDINGS ARTICLE | March 2, 2006

Synthesis and characterization of (Zn,Mg)O:P/ZnO heterostructures

Proc. SPIE. 6122, Zinc Oxide Materials and Devices

KEYWORDS: Gold, Light emitting diodes, Laser energy, Atomic force microscopy, Oxygen, Sapphire, Zinc oxide, Heterojunctions, Edge emitting semiconductor lasers, Temperature metrology

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PROCEEDINGS ARTICLE | September 14, 2005

Fabrication of p-n junctions in as-grown ZnMgO/ZnO films

Proc. SPIE. 5941, Fifth International Conference on Solid State Lighting

KEYWORDS: Electronics, Titanium, Ultraviolet radiation, Annealing, Resistance, Doping, Diodes, Zinc oxide, Pulsed laser deposition, Temperature metrology

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PROCEEDINGS ARTICLE | September 13, 2004

Characterization of InGaAs self-mixing detectors for chirp amplitude-modulated ladar (CAML)

Proc. SPIE. 5412, Laser Radar Technology and Applications IX

KEYWORDS: Target detection, Photodetectors, Indium gallium arsenide, Modulation, LIDAR, Sensors, Gallium arsenide, Receivers, Semiconductor lasers, Signal detection

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PROCEEDINGS ARTICLE | June 18, 2004

Analysis of InGaAs metal-semiconductor-metal OE mixers

Proc. SPIE. 5349, Physics and Simulation of Optoelectronic Devices XII

KEYWORDS: Photodetectors, Indium gallium arsenide, Modulation, Electrodes, Electrons, Electroluminescence, Optoelectronics, Diodes, Circuit switching, Absorption

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PROCEEDINGS ARTICLE | August 21, 2003

Mixing characteristics of InAlAs/InGaAs metal-semiconductor-metal optoelectronic mixers

Proc. SPIE. 5086, Laser Radar Technology and Applications VIII

KEYWORDS: Photodetectors, Indium gallium arsenide, LIDAR, Sensors, Gallium arsenide, Electroluminescence, Optoelectronics, Diodes, Circuit switching, Absorption

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PROCEEDINGS ARTICLE | July 25, 2003

Finite difference analysis of thermal characteristics of CW operation 850-nm lateral current injection and implant-apertured VCSEL with flip-chip bond design

Proc. SPIE. 4986, Physics and Simulation of Optoelectronic Devices XI

KEYWORDS: Semiconductors, Optical fibers, Mirrors, Continuous wave operation, Resistance, Signal processing, Chemical analysis, Vertical cavity surface emitting lasers, Optical switching, Analytical research

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