Dr. Fan Ren
Distinguished Professor at Univ of Florida
SPIE Involvement:
Fellow status | Conference Program Committee | Author
Publications (24)

Proceedings Article | 1 March 2019
Proc. SPIE. 10919, Oxide-based Materials and Devices X
KEYWORDS: Switching, Dielectrics, Electrons, Doping, Gallium nitride, Ionization, Diodes, Field effect transistors, Silicon carbide, Gallium

Proceedings Article | 23 February 2018
Proc. SPIE. 10532, Gallium Nitride Materials and Devices XIII
KEYWORDS: Etching, Dry etching, Annealing, Ions, Gallium nitride, Diodes, Transistors, Field effect transistors, Gallium, Plasma

Proceedings Article | 19 April 2017
Proc. SPIE. 10104, Gallium Nitride Materials and Devices XII
KEYWORDS: Satellites, Nondestructive evaluation, Gallium nitride, Telecommunications, Transistors, Field effect transistors, Satellite communications, Optical pumping, Advanced radar, Piezoelectric effects

Proceedings Article | 27 April 2015
Proc. SPIE. 9363, Gallium Nitride Materials and Devices X
KEYWORDS: Etching, Interfaces, Silicon, Computer simulations, Gallium nitride, Transistors, Field effect transistors, Virtual reality, TCAD, Floods

Proceedings Article | 27 March 2013
Proc. SPIE. 8625, Gallium Nitride Materials and Devices VIII
KEYWORDS: Electrodes, Metals, Reliability, Materials science, Gallium nitride, Sapphire, Transistors, Field effect transistors, Silicon carbide, Heterojunctions

Proceedings Article | 15 October 2012
Proc. SPIE. 8463, Nanoengineering: Fabrication, Properties, Optics, and Devices IX
KEYWORDS: Thin films, Nanoengineering, Quartz, Ultraviolet radiation, Zinc, Thermal effects, Zinc oxide, Liquids, Absorption, Nanorods

Showing 5 of 24 publications
Conference Committee Involvement (4)
Gallium Nitride Materials and Devices XV
1 February 2020 | San Francisco, California, United States
Gallium Nitride Materials and Devices XIV
4 February 2019 | San Francisco, California, United States
Gallium Nitride Materials and Devices XIII
29 January 2018 | San Francisco, California, United States
Gallium Nitride Materials and Devices XII
30 January 2017 | San Francisco, California, United States
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