Dr. Fan Zhang
at Virginia Commonwealth Univ
SPIE Involvement:
Author
Publications (26)

PROCEEDINGS ARTICLE | February 26, 2016
Proc. SPIE. 9748, Gallium Nitride Materials and Devices XI
KEYWORDS: Nanostructures, Light emitting diodes, Luminescence, Indium, Quantum efficiency, Scanning electron microscopy, Gallium nitride, Near field scanning optical microscopy, Indium gallium nitride, Epitaxial lateral overgrowth, Near field optics

PROCEEDINGS ARTICLE | March 13, 2015
Proc. SPIE. 9363, Gallium Nitride Materials and Devices X
KEYWORDS: Light emitting diodes, Indium, Quantum efficiency, Chemical vapor deposition, Gallium nitride, Indium gallium nitride, Metalorganic chemical vapor deposition, Heterojunctions, Indium nitride, Epitaxial lateral overgrowth

PROCEEDINGS ARTICLE | March 13, 2015
Proc. SPIE. 9363, Gallium Nitride Materials and Devices X
KEYWORDS: Mirrors, Quantum wells, Indium, Gallium nitride, Terahertz radiation, Phonons, Indium gallium nitride, Acoustics, Laser beam diagnostics, Superlattices

PROCEEDINGS ARTICLE | March 13, 2015
Proc. SPIE. 9363, Gallium Nitride Materials and Devices X
KEYWORDS: X-ray optics, Luminescence, X-rays, X-ray diffraction, Chemical vapor deposition, Scanning electron microscopy, Gallium nitride, Sapphire, Excitons, Epitaxial lateral overgrowth

PROCEEDINGS ARTICLE | March 13, 2015
Proc. SPIE. 9363, Gallium Nitride Materials and Devices X
KEYWORDS: Quantum wells, Luminescence, Photons, Reflectivity, Gallium nitride, Excitons, Polaritons, Indium gallium nitride, Optical microcavities, Temperature metrology

PROCEEDINGS ARTICLE | March 13, 2015
Proc. SPIE. 9363, Gallium Nitride Materials and Devices X
KEYWORDS: Quantum wells, Light emitting diodes, External quantum efficiency, Polarization, Luminescence, Quantum efficiency, Excitons, Indium gallium nitride, Internal quantum efficiency, Temperature metrology

Showing 5 of 26 publications
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