In this work we investigate the application and optimization of GaSb buffers on Silicon for improved device performance in the mid-wave infrared (MWIR). In particular, we examine the nucleation process of AlSb to create a template for growth of the GaSb buffer, as well as the use of defect filtering layers for reducing residual threading dislocations in the buffer layer. The location of the defect filtering layer plays a role in its effectiveness. Threading dislocation densities as low as mid-10^7 defects/cm^2 have been achieved. This study includes analysis from photoluminescence spectroscopy, transmission electron microscopy, temperature-dependent x-ray diffraction studies, and x-ray diffraction reciprocal space mapping.
In this investigation, two techniques of epitaxial growth of GaSb quantum dots on silicon substrates are explored. The first method involves the direct nucleation of GaSb islands on the Silicon (100) substrate and an AlSb barrier layer. The second method combines selective-area epitaxy (SAE) with Vapor-Liquid-Solid (VLS) growth principles in order to achieve suitable growth temperatures for antimonides. Our analysis focuses on the presence of pseudomorphic strain due to the high mismatch in lattice constant between the dots and the substrate. Transmission electron microscopy and photoluminescence spectroscopy are used to characterize the dots analyzed in these studies.
Optical antennas made out of van der Waals material with naturally occurring hyperbolic dispersion is a promising alternative to plasmonic and high-refractive-index dielectric structures in the practical realization of nanoscale photonic elements and optical components. Here we show that antenna made out of hexagonal boron nitride (hBN) possesses different resonances enabled by the supporting high-k modes and their reflection from the antenna boundaries. Multipole resonances cause the decrease in the reflection from antenna array to zero, which can be ascribed to resonant Kerker effect satisfying generalized zero back-scattering condition for particles in the array. Reflection and transmission through the van der Waals heterostructure with hBN antennas array can be tailored and actively switched by tuning optical properties of two-dimensional materials. Transdimensional photonic lattices consisting of resonant hBN antennas in the engineered periodic arrays have great potential to serve as functional elements in ultra-thin optical components and photonic devices.
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