Two types of readout integrated circuit named SFD and CTIA are proposed to match the PVDF pyroelectric IR detector.
By employing macro model and analyzing the parameters of detector, the best matching conditions including the input
reference noise, input impedance, input capacitance, and working point are investigated in details. Based on the property
of the AC output for PVDF detector, we propose a novel readout method, with which the ratio of signal to noise can be
greatly improved. Furthermore, the linearity and sensitivity for both circuits are discussed by the means of Spectre tools.
A novel 256×1 readout integrated circuit (ROIC) with simultaneous integration mode for two-color
(MWIR/LWIR,MWIR/SWIR) n-p-P-P-N HgCdTe infrared detectors is presented in this paper. This ROIC features an
input stage based on current mirror integration (CMI) structure, which separates MW (SW) photocurrent signal from
mixed signals of LW and MW (MW and SW) and each waveband photocurrent signal is capable to be integrated in
uncorrelated-simultaneous mode. A test chip of 256×1 ROIC is designed and fabricated with 0.6μm double poly double
metal mixed signal technology. The chip test results prove right function of the circuit. It shows good performance of
integration of MW and LW signals. The linearity of MW and LW output voltage- input current curve is over 99%. Power
dissipation of the circuit is less than 50 mW. Readout clock frequency is up to 2 MHz.
With the development of the infrared focal plane detectors, the internal noises in the infrared focal
plane arrays (IRFPAs) CMOS readout integrated circuit gradually became an important factor of the
development of the IRFPAs. The internal noises in IRFPAs CMOS readout integrated circuit are
researched in this work. Part of the motivation for this work is to analyze the mechanism and influence
of the internal noises in readout integrated circuit. And according to the signal transporting process,
many kinds of internal noises are analyzed. According to the results of theory analysis, it is shown that
1/f noise, KTC noise and pulse switch noise have greater amplitude in frequency domain. These noises
have seriously affected the performance of output signal. Also this work has frequency test on the
signals of a readout integrated circuit chip which is using DI readout mode. After analyzing the
frequency test results, it is shown that 1/f noises and pulse switch noises are the main components of
the internal noises in IRFPAS CMOS readout integrated circuit and they are the noises which give a
major impact to the output signal. In accordance with the type of noise, some design methods for noise
suppression are put forward. And after the simulation of these methods with EDA software, the results
show that noises have been reduced. The results of this work gave the referenced gist for improving the
noise suppression design of IRFPAs CMOS readout integrated circuit.