InGaN/GaN multiple quantum well samples were grown by metal organic chemical vapor deposition with thinner low-temperature
GaN buffers than that in the conventional structure. It was found that the absorption recovery times of the
InGaN/GaN quantum wells can be controlled by varying the thickness of the low-temperature GaN buffers.
Transmission electron microscopy results showed that increased dislocations were introduced in the quantum well region
with decreased low-temperature GaN buffer thickness. The degraded crystalline quality of the absorbing regions caused
an increased density of nonradiative recombination centers, which were responsible for the fast recovery of the