The point defects exist in the SiO2 thin films can cause high absorption, which is known to be responsible for laser induced damage of the films under high power nanosecond (ns) laser irradiation. Laser conditioning of the film is beneficial to eliminate the film defects and improve the ability of films to resist ultraviolet (UV) ns laser damage. In this article, femtosecond laser is proposed to modify the SiO2 films in the hope of improving the damage resistance of films to UV lasers. After femtosecond laser conditioning, the film properties of ALD SiO2 films were characterized in terms of surface morphology, UV laser damage induced threshold (LIDT) and optical properties. The results show that significant improvement in laser damage resistance is achieved after femtosecond laser conditioning, the LIDT of the 300 nm SiO2 thin film increased from 1.55 J/cm2 to 16.69 J/cm2, and the LIDT of the 600 nm SiO2 thin film increased from 2.01 J/cm2 to 9.46 J/cm2.
In this study, silicon carbide ceramic (SiC) was processed by a high repetition frequency femtosecond laser with a wavelength of 1030 nm. We have analyzed the affection of different parameters to the material removal rate and researched surface oxidation phenomenon during laser scanning. The surface oxidation phenomenon is a major factor that affects the material removal rate of SiC ceramic and may even lead to failure of material removal. The oxidation phenomenon of the processing area is directly related to the laser induced temperature rise. Increasing laser scanning speed and increasing laser scanning interval are effective methods to reduce the oxidation phenomenon. The experiments have demonstrated that high-speed processing of SiC ceramic by high repetition frequency femtosecond laser is available under certain parameters.
Nanosecond UV laser-induced surface damage of potassium dihydrogen phosphate samples was investigated and discussed by means of defect characterization, in situ damage test, as well as pump–probe shadowgraph imaging. Two distinctive types of surface damage induced by different defects have been demonstrated. Surface damage occurring at relative lower fluence (typically below 5 J / cm2 in our experiment) is highly correlated with fluorescent surface defects, which are considered as fractural structures introduced by surface cutting. The other type of surface damage that always occurs at higher fluence (above 8 J / cm2) is confirmed to originate from the bulk damage precursor located near the crystal surface.
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