BAlN films were performed by either the flow-modulated epitaxy method or continuous growth method. All BxAl1-xN films are single-phase confirmed by high-resolution 2θ–ω (002) X-ray diffraction. The Boron (B) content of each sample was determined by Secondary Neutral Mass Spectrometry with various values have been achieved from 22 to 34% and reconfirmed by Rutherford backscattering spectrometry. All BAlN samples clearly showed the columnar crystalline on the surface which was observed by AFM measurement. The high B contents can expand the applications of BAlN for deep ultraviolet and power electronic device applications.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.