Prof. Fedir F. Sizov Profile

Prof. Fedir F. Sizov

Dept Head at VE Lashkaryov Institute of Semiconductor Physics

SPIE Involvement:

Fellow status | Conference Program Committee | Conference Chair | Symposium Chair | Author

Publications (60)

SPIE Journal Paper | December 10, 2015

Mercury–cadmium–telluride thin layers as subterahertz and infrared detectors

Sizov, Fedir , Tsybrii, Zinoviia , Zabudsky, Vyacheslav , Golenkov, Oleksandr , Petryiakov, Volodymyr , Dvoretsky, Sergey , Michailov, Nikolai , Shevchik-Shekera, Anna , Lysiuk, Ihor , Dieguez, Ernesto

OE Vol. 54 Issue 12

KEYWORDS: Sensors, Terahertz radiation, Infrared sensors, Infrared detectors, Antennas, Mercury cadmium telluride, Infrared imaging, Infrared radiation, Semiconductors, Bolometers

PROCEEDINGS ARTICLE | May 13, 2015

MCT as sub-terahertz and infrared detector

Proc. SPIE. 9483, Terahertz Physics, Devices, and Systems IX: Advanced Applications in Industry and Defense

KEYWORDS: Bolometers, Infrared detectors, Semiconductors, Thermography, Infrared sensors, Sensors, Photoresistors, Terahertz radiation, Infrared radiation, Antennas

PROCEEDINGS ARTICLE | September 24, 2013

The dynamic range of THz broadband FET detectors

Proc. SPIE. 8846, Terahertz Emitters, Receivers, and Applications IV

KEYWORDS: Indium gallium arsenide, Sensors, Terahertz radiation, Transistors, Antennas, Field effect transistors, Signal detection, Electron transport, Pulsed laser operation, Free electron lasers

SPIE Journal Paper | March 15, 2013

Millimeter-wave narrow-gap uncooled hot-carrier detectors for active imaging

Sizov, Fedir , Zabudsky, Vyacheslav , Golenkov, Aleksandr , Shevchik-Shekera, Anya

OE Vol. 52 Issue 03

KEYWORDS: Sensors, Antennas, Terahertz radiation, Field effect transistors, Bolometers, Signal detection, Image sensors, Active sensors, Resistance, Silicon

PROCEEDINGS ARTICLE | December 18, 2012

Mm-wave hybrid narrow-gap hot-carrier and Schottky diodes detector arrays

Proc. SPIE. 8550, Optical Systems Design 2012

KEYWORDS: Bolometers, Semiconductors, Imaging systems, Sensors, Silicon, Resistance, Diodes, Terahertz radiation, Antennas, Field effect transistors

PROCEEDINGS ARTICLE | October 15, 2012

Terahertz detection and emission by field-effect transistors

Proc. SPIE. 8496, Terahertz Emitters, Receivers, and Applications III

KEYWORDS: Sensors, Silicon, Amplifiers, Terahertz radiation, Transistors, Antennas, Field effect transistors, Signal detection, Terahertz detection, Plasma

PROCEEDINGS ARTICLE | September 22, 2011

THz/sub-THz detector based on electrons and holes heating by electromagnetic wave propagating along Hg1-xCdxTe layer

Proc. SPIE. 8167, Optical Design and Engineering IV

KEYWORDS: Bolometers, Semiconductors, Waveguides, Sensors, Electrons, Electromagnetic radiation, Wave propagation, Terahertz radiation, Antennas, Signal detection

PROCEEDINGS ARTICLE | May 16, 2011

Electro-optical effects in 2D macroporous silicon structures with nanocoatings

Proc. SPIE. 8071, Nonlinear Optics and Applications V

KEYWORDS: Silica, Scattering, Nickel, Silicon, Light scattering, Electromagnetic radiation, Nanocrystals, Electro optics, Nano coatings, Absorption

PROCEEDINGS ARTICLE | November 5, 2010

THz/sub-THz narrow-gap semiconductor detector

Proc. SPIE. 7854, Infrared, Millimeter Wave, and Terahertz Technologies

KEYWORDS: Bolometers, Semiconductors, Mercury cadmium telluride, Waveguides, Sensors, Electrons, Resistance, Electromagnetic radiation, Terahertz radiation, Antennas

PROCEEDINGS ARTICLE | April 30, 2009

Mm- and THz-waves detector on the base of narrow-gap semiconductors

Proc. SPIE. 7309, Passive Millimeter-Wave Imaging Technology XII

KEYWORDS: Bolometers, Semiconductors, Infrared sensors, Mercury cadmium telluride, Sensors, Resistance, Detector development, Terahertz radiation, Antennas, Temperature metrology

PROCEEDINGS ARTICLE | September 27, 2008

Nature of group-III related deep centers in lead telluride based semiconductors: Ga doping from vapor phase

Proc. SPIE. 7100, Optical Design and Engineering III

KEYWORDS: Semiconductors, Chemical species, Molecules, Crystals, Doping, Molecular interactions, Gallium, Tellurium, Group IV-VI semiconductors, Lead

PROCEEDINGS ARTICLE | September 27, 2008

MCT detectors: from IR to sub-mm and mm wavelength bands

Proc. SPIE. 7100, Optical Design and Engineering III

KEYWORDS: Bolometers, Infrared detectors, Semiconductors, Infrared sensors, Sensors, Photons, Manufacturing, Superconductors, Photodiodes, Terahertz radiation

Modern technology advances combined with unique physical properties of mercury cadmium telluride (MCT) material, empower low-signal applications in technical vision systems. Properties of MCT detectors manufactured from LPE and MBE epilayers and their dependences on thickness and doping both for IR and THz regions are discussed. It is shown by comparison of experimental data and modeling of I-V dark current characteristics that MCT photodiode ultimate electrical characteristics are limited by diffusion current in n⁺-n^--p junctions and by current via the deep traps in the gap with position E_t= 0.7 E_g above the valence band and concentrations N_t = (1.0-5.5)•10¹⁵ cm^-3 which are comparable with donor concentration in n^--region Nd = (1.1-1.8)•1015 cm^-3. Detector array parameters for a wavelength range 8-12 microns are: detectivity D*=1.9•10¹¹ cm•Hz^1/2/W, noise equivalent difference temperature NEDT ≈ 9 mK, dynamical resistance R ≈ 4·10⁹ Ohm for the reverse biases ΔV = 0.1-0.2 V. Also, it is shown that MCT layers can be successfully used as sub-mm or mm wave ambient temperature or moderately cooled hot electron bolometers. Thus, in addition to the wavelength range from SWIR to VLIR, where the MCT detectors are employed mainly as photodiodes or photoresistors, they can be used as sub-mm or mm wave detectors in the range from 190 microns to 8 mm. They can be employed here as semiconductor hot electron bolometers (SHEB). Measurements performed at electromagnetic wave frequencies ν = 37, 55, 77 GHz, and also at 0.89 and 1.58 THz with non-optimized Hg_0.8Cd_0.2Te bolometer prototype, has confirmed the basic concepts of SHEB. At ν = 0.89 THz, 77 GHz and 37 GHz the signal temperature dependencies were measured too. At 77 K the SHEB sensitivity at ν = 37 and 77 GHz is increasing up to two orders compared to room temperature data. The sensitivity S_ν ≈ 2 V/W at 300 K, and calculated both Johnson-Nyquist and generation-recombination noise values give estimations of SHEB NEP ~ 4•10^-10 W at band-width Δf = 1 Hz and ν = 37 GHz.

PROCEEDINGS ARTICLE | April 19, 2006

THz semiconductor hot electron bolometer (SHEB)

Proc. SPIE. 6194, Millimeter-Wave and Terahertz Photonics

KEYWORDS: Bolometers, Semiconductors, Electronics, Cadmium, Sensors, Mercury, Resistance, Terahertz radiation, Field effect transistors, Plasma

PROCEEDINGS ARTICLE | February 28, 2006

Charge carrier transport in barrier “in-macroporous silicon” structures

Proc. SPIE. 6127, Quantum Sensing and Nanophotonic Devices III

KEYWORDS: Semiconductors, Metals, Crystals, Indium, Silicon, Hydrogen, Manufacturing, Resistance, Resistors, Temperature metrology

PROCEEDINGS ARTICLE | February 14, 2006

THz semiconductor hot electron bolometer

Proc. SPIE. 6120, Terahertz and Gigahertz Electronics and Photonics V

KEYWORDS: Bolometers, Semiconductors, Cadmium, Sensors, Mercury, Manufacturing, Resistance, Terahertz radiation, Tellurium, Absorption

PROCEEDINGS ARTICLE | October 15, 2005

Comparative analysis of 4x288 readouts and FPAs

Proc. SPIE. 5964, Detectors and Associated Signal Processing II

KEYWORDS: Staring arrays, Readout integrated circuits, Dielectrics, Manufacturing, Amplifiers, Photodiodes, Transistors, Charge-coupled devices, CMOS technology, Multiplexers

Comparative analysis of four 4x288 different designed readouts elaborated at the Institute of Microdevices and the Institute of Semiconductor Physics is presented. Also some features of design 576x6 readouts adduced. All the readouts have the direct injection input circuit with incorporated cells allowing testing without photodiodes. TDI registers have three delay elements between neighbor inputs. Some characteristics of 4x288 FPAs with mercury-cadmium-telluride TDI arrays are cited too. 2-phase and 4-phase CCD readouts (2.5 micron technology) have different channel types (surface, buried and semi-buried), which include 10 bit TDI registers in each channel, and 18 channel multiplexing to 16 outputs. Two polysili-con, one metal level and 400 A dielectric layers were used. The readouts characteristics: charge handling capacity, transfer characteristics, output nonlinearity characteristics, bias dispersion, etc. are presented. CCD technology used for data multiplication results in crosstalk increase, because of the presence of rather considerable transfer inefficiency at cryogenic temperatures. Using 2.5 micron CCD technology and 2.0 CMOS technology the readouts, which include the digital interface for dead pixels deselection, preliminary amplification circuits, 36 channel multiplication by CCD registers and 2 beat multiplication by analogue switches to 4 output amplifiers, were manufactured. One pocket CMOS technology with two polysilicon, two metal levels and 350 A dielectric layers were used. To increase the linearity of transfer characteristics and noise level decrease at the output of CCD the circuits of charge-voltage conversion on the base of operational amplifiers were used. This allows getting circuits with parameters close to those obtained by 0.8 - 1.0 micron CMOS technology. Also some characteristics of 4x288 readouts designed by 1.2 micron CMOS technology are discussed (two polysilicon and two metal levels). This one includes the circuits of auxiliary electronics. Comparative analysis shows that the readouts mentioned are different in numbers of outputs, external service but have rather similar parameters.

PROCEEDINGS ARTICLE | September 30, 2005

Thermooptical excitation in Hg1-xCdxTe alloys subjecting to ultrasonic influence

Proc. SPIE. 5957, Infrared Photoelectronics

KEYWORDS: Thin films, Cadmium, Crystals, Mercury, Magnetism, Ultrasonics, Infrared radiation, Acoustics, Tellurium, Absorption

PROCEEDINGS ARTICLE | September 30, 2005

Radiation hardness of MCT LWIR arrays

Proc. SPIE. 5957, Infrared Photoelectronics

KEYWORDS: Long wavelength infrared, Mercury cadmium telluride, Annealing, Diffusion, Mercury, Manufacturing, Resistance, Photodiodes, Diodes, Infrared radiation

PROCEEDINGS ARTICLE | September 30, 2005

Regularities of the CdxHg1-xTe p-n junction formation by ion milling

Proc. SPIE. 5957, Infrared Photoelectronics

KEYWORDS: Gold, Cadmium, Chemical species, Crystals, Copper, Ions, Diffusion, Mercury, Silver, Tellurium

PROCEEDINGS ARTICLE | September 30, 2005

Superconductor states of lead nanoinclusions in PbTe semiconductor matrix

Proc. SPIE. 5957, Infrared Photoelectronics

KEYWORDS: Semiconductors, Optical spheres, Metals, Crystals, Magnetism, Superconductors, Spherical lenses, Thermodynamics, Superconductivity, Lead

PROCEEDINGS ARTICLE | September 30, 2005

Temperature dependence of dark current in HgCdTe photodiode arrays

Proc. SPIE. 5957, Infrared Photoelectronics

KEYWORDS: Long wavelength infrared, Mercury cadmium telluride, Cadmium, Diffusion, Mercury, Resistance, Photodiodes, Diodes, Tellurium, Temperature metrology

PROCEEDINGS ARTICLE | September 24, 2005

Fractal encoding as approach to processing of the medical thermal images

Proc. SPIE. 5959, Medical Imaging

KEYWORDS: Thermography, Image compression, Visualization, Image processing, Computer programming, Medical imaging, Image quality, Fractal analysis, Zoom lenses, Algorithm development

SPIE Conference Volume | September 23, 2005

Infrared Photoelectronics

PROCEEDINGS ARTICLE | September 12, 2005

Electrical characteristics relaxation of ion milled MCT layers

Proc. SPIE. 5881, Infrared and Photoelectronic Imagers and Detector Devices

KEYWORDS: Cadmium, Data modeling, Chemical species, Annealing, Crystals, Ions, Mercury, Neodymium, Semiconducting wafers, Tellurium

PROCEEDINGS ARTICLE | April 7, 2005

4x288 linear array with hybrid ROIC (CCD + CMOS)

Proc. SPIE. 5726, Semiconductor Photodetectors II

KEYWORDS: Staring arrays, Readout integrated circuits, Silicon, Manufacturing, Photodiodes, Diodes, Transistors, Charge-coupled devices, CMOS technology, Design for manufacturability

PROCEEDINGS ARTICLE | April 7, 2005

576x6 ROIC for MCT LWIR arrays

Proc. SPIE. 5726, Semiconductor Photodetectors II

KEYWORDS: Readout integrated circuits, Long wavelength infrared, Photovoltaics, Clocks, Sensors, Metals, Video, Manufacturing, Diodes, Analog electronics

PROCEEDINGS ARTICLE | September 8, 2004

Unglue bonding of glass/ceramic parts with ultralow coefficient of thermal expansion

Proc. SPIE. 5454, Micro-Optics: Fabrication, Packaging, and Integration

KEYWORDS: Mirrors, Polishing, Titanium, Metals, Glasses, Indium, Aluminum, Zerodur, Surface finishing, Liquids

PROCEEDINGS ARTICLE | September 8, 2004

Ellipsometric investigations of polished surface of glass/ceramic with ultralow coefficient of the temperature expansion

Proc. SPIE. 5454, Micro-Optics: Fabrication, Packaging, and Integration

KEYWORDS: Diffraction, Polishing, Reflection, Quartz, Glasses, Crystals, Reflectivity, Abrasives, Optics manufacturing, Surface finishing

PROCEEDINGS ARTICLE | July 9, 2004

Enhancement of the photoconductivity in 2D photonic macroporous silicon structures

Proc. SPIE. 5360, Photonic Crystal Materials and Devices II

KEYWORDS: Reflection, Annealing, Silicon, Electromagnetic radiation, Distance measurement, Transmittance, Raman scattering, Polaritons, Silicon photonics, Absorption

PROCEEDINGS ARTICLE | February 19, 2004

MCT linear arrays and associated silicon readouts

Proc. SPIE. 5251, Detectors and Associated Signal Processing

KEYWORDS: Staring arrays, Mercury cadmium telluride, Gallium arsenide, Silicon, Manufacturing, Photodiodes, Diodes, Transistors, Charge-coupled devices, CMOS technology

PROCEEDINGS ARTICLE | October 10, 2003

Composite readouts with TDI and dead elements deselection

Proc. SPIE. 5074, Infrared Technology and Applications XXIX

KEYWORDS: Readout integrated circuits, Clocks, Silicon, Manufacturing, Amplifiers, Photodiodes, Transistors, Charge-coupled devices, CMOS technology, Multiplexers

PROCEEDINGS ARTICLE | September 30, 2003

The 4x288 linear FPA on the heteroepitaxial Hg_1-xCd_xTe base

Proc. SPIE. 5126, 17th International Conference on Photoelectronics and Night Vision Devices

KEYWORDS: Staring arrays, Readout integrated circuits, Mercury cadmium telluride, Sensors, Silicon, Manufacturing, Photodiodes, Diodes, Charge-coupled devices, Signal detection

SPIE Conference Volume | April 14, 2003

Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics

PROCEEDINGS ARTICLE | December 5, 2002

Noise measurements of HgCdTe LWIR arrays with CCD readouts

Proc. SPIE. 4795, Materials for Infrared Detectors II

KEYWORDS: Staring arrays, Long wavelength infrared, Signal to noise ratio, Mercury cadmium telluride, Silicon, Manufacturing, Interference (communication), Photodiodes, Diodes, Charge-coupled devices

PROCEEDINGS ARTICLE | November 12, 2001

Dark current transport mechanisms in narrow-gap heterojunctions for IR arrays

Proc. SPIE. 4454, Materials for Infrared Detectors

KEYWORDS: Infrared detectors, Quantum wells, Lithium, Cadmium, Mercury, Photodiodes, Diodes, Charge-coupled devices, Heterojunctions, Tellurium

PROCEEDINGS ARTICLE | June 12, 2001

Properties of 2x64 linear HgCdTe MBE-grown LWIR arrays with CCD silicon readouts

Proc. SPIE. 4288, Photodetectors: Materials and Devices VI

KEYWORDS: Staring arrays, Mercury cadmium telluride, Gallium arsenide, Silicon, Manufacturing, Photodiodes, Diodes, Charge-coupled devices, Gallium, Tellurium

SPIE Conference Volume | February 22, 2001

Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics

PROCEEDINGS ARTICLE | February 22, 2001

Gap deep defect states in narrow-gap semiconductors

Proc. SPIE. 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics

KEYWORDS: Semiconductors, Metals, Crystals, Magnetism, Laser crystals, Group IV-VI semiconductors, V band, Magnetic semiconductors, Temperature metrology, Lead

PROCEEDINGS ARTICLE | February 22, 2001

2X64 linear LWIR arrays based in HgCdTe MBE-grown layers and CCD silicon readouts

Proc. SPIE. 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics

KEYWORDS: Staring arrays, Long wavelength infrared, Mercury cadmium telluride, Sensors, Silicon, Manufacturing, Photodiodes, Diodes, Infrared radiation, Charge-coupled devices

SPIE Conference Volume | November 4, 1999

Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics

PROCEEDINGS ARTICLE | November 4, 1999

Currents in Hg1-xCdxTe photodiodes

Proc. SPIE. 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics

KEYWORDS: Staring arrays, Mercury cadmium telluride, Sensors, Resistance, Photodiodes, Diodes, Sodium, Neodymium, Signal detection, Temperature metrology

PROCEEDINGS ARTICLE | November 4, 1999

Optical properties of Hg1-xCdxTe/CdTe epitaxial films with graded band gap

Proc. SPIE. 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics

KEYWORDS: Photodetectors, Liquid phase epitaxy, Mercury cadmium telluride, Data modeling, Optical properties, Computing systems, Transmittance, Infrared radiation, Absorbance, Absorption

PROCEEDINGS ARTICLE | July 26, 1999

Readout device processing electronics for IR linear and focal plane arrays

Proc. SPIE. 3698, Infrared Technology and Applications XXV

KEYWORDS: Staring arrays, Sensors, Electrodes, Silicon, Manufacturing, Interference (communication), Signal processing, Transistors, Charge-coupled devices, Multiplexers

PROCEEDINGS ARTICLE | April 8, 1999

Carrier transport mechanisms in narrow-gap photodiodes

Proc. SPIE. 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology

KEYWORDS: Long wavelength infrared, Semiconductors, Mercury cadmium telluride, Sensors, Silicon, Diffusion, Photodiodes, Diodes, Information operations, Temperature metrology

PROCEEDINGS ARTICLE | October 26, 1998

Onco-hematological diagnostics by IR spectroscopy

Proc. SPIE. 3436, Infrared Technology and Applications XXIV

KEYWORDS: Minerals, Spectroscopy, Organisms, Diagnostics, Bone, Infrared spectroscopy, Infrared radiation, Chemical elements, Leukemia, Absorption

PROCEEDINGS ARTICLE | October 26, 1998

Testing of readout device processing electronics for IR linear and focal plane arrays

Proc. SPIE. 3436, Infrared Technology and Applications XXIV

KEYWORDS: Staring arrays, Electronics, Silicon, Manufacturing, Photodiodes, Transistors, Charge-coupled devices, Multiplexers, Molybdenum, Signal detection

SPIE Conference Volume | August 18, 1998

Imaging System Technology for Remote Sensing

PROCEEDINGS ARTICLE | August 18, 1998

Thermal radiation detecting in far-infrared and mm ranges

Proc. SPIE. 3505, Imaging System Technology for Remote Sensing

KEYWORDS: Semiconductors, Photodetectors, Modulation, Sensors, Crystals, Resistance, Magnetism, Heterodyning, Solids, Information operations

PROCEEDINGS ARTICLE | April 20, 1998

Oxygen concentration distribution determination in silicon wafers by semiconductor IR laser spectroscopy

Proc. SPIE. 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997

KEYWORDS: Semiconductors, Spectroscopy, Silicon, Oxygen, Semiconductor lasers, Infrared lasers, Laser spectroscopy, Semiconducting wafers, Spectrometer engineering, Absorption

PROCEEDINGS ARTICLE | August 26, 1997

Electronic component design and testing for multielement IR arrays with CCD readout devices

Proc. SPIE. 3182, Material Science and Material Properties for Infrared Optoelectronics

KEYWORDS: Clocks, Silicon, Electronic components, Charge-coupled devices, Multiplexers

SPIE Conference Volume | August 26, 1997

Material Science and Material Properties for Infrared Optoelectronics

PROCEEDINGS ARTICLE | August 26, 1997

Nonlinear optical transmission of Cd0.2Hg0.8Te single crystals at room temperature

Proc. SPIE. 3182, Material Science and Material Properties for Infrared Optoelectronics

KEYWORDS: Cadmium, Crystals, Mercury, Laser crystals, Nonlinear crystals, Pulsed laser operation, Tellurium, Absorption

PROCEEDINGS ARTICLE | June 13, 1997

Laser-assisted deposition technique for thin semiconductor layers and low-dimensional structures growth

Proc. SPIE. 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology

KEYWORDS: Semiconductors, Thin films, Mercury cadmium telluride, Reflection, Crystals, Ions, Semiconductor lasers, Pulsed laser operation, Tellurium, Absorption

PROCEEDINGS ARTICLE | November 3, 1995

HgCdTe infrared linear arrays for 3-5- and 8-12-um wavelength regions

Proc. SPIE. 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics

KEYWORDS: Mercury cadmium telluride, Sensors, Interfaces, Silicon, Diffusion, Photodiodes, Diodes, Infrared radiation, Charge-coupled devices, Signal detection

PROCEEDINGS ARTICLE | November 3, 1995

Original method of diagnostics and modification of II-VI and III-V semiconductors

Proc. SPIE. 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics

KEYWORDS: Semiconductors, Diffraction, Refractive index, Cadmium, Crystals, Composites, Gallium arsenide, Reflectivity, Cadmium sulfide, Diffraction gratings

PROCEEDINGS ARTICLE | October 16, 1995

Properties of type II mismatched PbTe/PbS superlattices

Proc. SPIE. 2373, Solid State Crystals: Materials Science and Applications

KEYWORDS: Semiconductors, Multilayers, Interfaces, Magnetism, Heterojunctions, Superlattices, Stereolithography, Laser sintering, Lead, Absorption

PROCEEDINGS ARTICLE | October 16, 1995

Characterization of p-on-n HgCdTe diffusion photodiodes

Proc. SPIE. 2373, Solid State Crystals: Materials Science and Applications

KEYWORDS: Long wavelength infrared, Mid-IR, Mercury cadmium telluride, Crystals, Diffusion, Photodiodes, Diodes, Arsenic, Information operations, Temperature metrology

PROCEEDINGS ARTICLE | October 31, 1994

High-resolution IR laser spectral analysis in nondestructive onco-hematological diagnostics and semiconductor technique applications

Proc. SPIE. 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics

KEYWORDS: Semiconductors, Spectroscopy, Diagnostics, Oxygen, Bone, Semiconductor lasers, Infrared spectroscopy, Laser spectroscopy, Leukemia, Absorption

SPIE Journal Paper | May 1, 1994

Mechanisms of dark conductivity and photosensitivity in PbSe polycrystalline films on glass and Si substrates

Tetyorkin, Vladimir , Orletskii, V. , Sizov, Fiodor , Tashtanbajev, N. , Stepanushkin, Alexandr

OE Vol. 33 Issue 05

KEYWORDS: Crystals, Silicon, Glasses, Silicon films, Lead, Interfaces, Semiconductors, Information operations, Photodetectors, Infrared detectors

PROCEEDINGS ARTICLE | October 15, 1993

Quantum-well infrared optoelectronic devices

Proc. SPIE. 1845, Liquid and Solid State Crystals: Physics, Technology and Applications

KEYWORDS: Infrared detectors, Semiconductors, Photodetectors, Quantum wells, Mercury cadmium telluride, Sensors, Semiconductor lasers, Stereolithography, Laser sintering, Absorption

Showing 5 of 60 publications

Conference Committee Involvement (13)

Detectors and Associated Signal Processing V

27 November 2012 | Barcelona, Spain

Detectors and Associated Signal Processing IV

5 September 2011 | Marseille, France

Detectors and Associated Signal Processing

4 September 2008 | Glasgow, Scotland, United Kingdom

Detectors and Associated Signal Processing II

13 September 2005 | Jena, Germany

Infrared Photoelectronics

30 August 2005 | Warsaw, Poland

Showing 5 of 13 published special sections

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