CuInse2 films and related alloys were prepared by thermal evaporation of Cu, InSe and GaSe
compounds instead of elemental sources. Band gap tailoring in Cu(In,Ga)Se2 based solar cells is an
interesting path to improve their performance. In order to get comparable results solar cells with
Ga/(In+Ga) ratios x =0 and 0.3 were prepared, all with a simple
two-step sequential evaporation
process. The morphology of the resulting films grown at 550°C was characterized by the presence of
large facetted chalcopyrite grains, which are typical for device quality material. It is important to
note that absorber films with elemental gallium resulted in a significant decrease in the average grain
size of the film. The XRD diffraction pattern of a single-phase Cu(In,Ga)Se2 films depicts
diffraction peaks shift to higher 2θ values compared to that of pure CuInSe2 . The PL spectrum of
Cu(In,Ga)Se2 thin films also depicts the presence of the peak at higher energy that is attributed to the
incorporation of gallium into the chalcopyrite lattice. As the band gap of CIGS increases with
gallium content, desirable effects of producing higher open-circuit voltage and low-current density
devices were achieved. A corresponding increase in device efficiency with gallium content caused
by a higher fill factor was observed. The best results show passive area efficiencies of up to 10.2%
and open circuit voltage (Voc) up to 519 mV at a minimum band gap of 1.18eV.
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