For a optics and spectroscopy laboratory that generated plasma from a lasers systems, it is important to know in detail the shape of the intensity distribution in the spot of the laser, for that reason it performed the characterization of the radiation from lasers CW (continuous) gas, solid state and semiconductor, where experimentally obtained information of the intensity distribution of the beam, the measurement of the radius of the spot, the beam profile and divergence of the same from a diagnostic device that is based on a CCD sensor. Images were obtained from Spot of the lasers by said sensor and were processed and analyzed by 2 dimensional graphs that yielded information on the intensity profile of the radiation optic lasers and also be presented the spot shape in detail, in order to ensure the quality of the laser systems and can select lasers devices that are capable of performing highly accurate experimental researches which have significant scientific or simply can perform ablation procedures without risk of affecting the material.
In the actuality the systems laser have become to the fundamental pillars of the science and the technology by their characteristic. In this work was development an specially system, versatile and compact, for obtain important physiques parameters in the characterization of laser device. The parameters obtained was the coherence grade, spatially temporary and, and the far field radiation patterns with their angles of divergence. The previous knowledge of these parameters is part of calibration of the laser system principally in high accuracy applications.
The waveguide based on semiconductors structures are devices of the great interest in optical communications systems, because they are part of more complex devices as the laser, modulators, etc. The waveguides are used to transmit the information from one device to another with just a few losses. This is why a good characterization of the measure of the modal behavior and the distribution profile of the electromagnetic field in waveguide structure are necessary. Our waveguide has a core composed by a structure of MQW of InGaAs/InAlAs. The core is confined between a cladding and buffer layer of InAlAs. This layer was grown on a substrate of InP by LP-MOCVD technique. The waveguide was processed using photolithography and chemical etch conventional technique. In order to characterize the waveguide the near field technique was implemented.