Dr. Frank A. Driessen Profile

Dr. Frank A. Driessen

Senior Marketing Manager, Holistic Lithography at

SPIE Involvement:

Conference Program Committee | Author

Publications (20)

PROCEEDINGS ARTICLE | April 17, 2014

EUV source-mask optimization for 7nm node and beyond

Proc. SPIE. 9048, Extreme Ultraviolet (EUV) Lithography V

KEYWORDS: Deep ultraviolet, Scanners, 3D modeling, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Source mask optimization, Algorithm development, Optimization (mathematics), Fiber optic illuminators

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PROCEEDINGS ARTICLE | March 31, 2014

Advanced OPC Mask-3D and Resist-3D modeling

Proc. SPIE. 9052, Optical Microlithography XXVII

KEYWORDS: Lithography, Data modeling, Calibration, Etching, 3D modeling, Atomic force microscopy, Scanning electron microscopy, Process control, Photomasks, Semiconducting wafers

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PROCEEDINGS ARTICLE | October 14, 2011

Mask aspects of EUVL imaging at 27nm node and below

Proc. SPIE. 8166, Photomask Technology 2011

KEYWORDS: Apodization, Multilayers, Scanners, Reflectivity, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Optical proximity correction, Photoresist processing, Semiconducting wafers

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PROCEEDINGS ARTICLE | October 14, 2011

Holistic lithography for EUV: NXE:3100 characterization of first printed wafers using an advanced scanner model and scatterometry

Proc. SPIE. 8166, Photomask Technology 2011

KEYWORDS: Lithography, Metrology, Deep ultraviolet, Scanners, Reflectivity, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Critical dimension metrology, Semiconducting wafers

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PROCEEDINGS ARTICLE | March 13, 2009

Enhanced layout optimization of sub-45nm standard: memory cells and its effects

Proc. SPIE. 7275, Design for Manufacturability through Design-Process Integration III

KEYWORDS: Silicon, Manufacturing, Laser induced breakdown spectroscopy, Design for manufacturing, Optical proximity correction, Optimization (mathematics), Semiconducting wafers, Tolerancing, Yield improvement, Standards development

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PROCEEDINGS ARTICLE | October 17, 2008

Flexible sensitivity inspection with TK-CMI software for criticality-awareness

Proc. SPIE. 7122, Photomask Technology 2008

KEYWORDS: Defect detection, Databases, Manufacturing, Inspection, Data processing, Photomasks, Optical proximity correction, Mask making, Data conversion, Defect inspection

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PROCEEDINGS ARTICLE | March 12, 2008

DFM software for photomask production and qualification of its accuracy and functionality

Proc. SPIE. 6925, Design for Manufacturability through Design-Process Integration II

KEYWORDS: Diffraction, Calibration, Manufacturing, Inspection, Image resolution, Design for manufacturing, Photomasks, Palladium, Semiconducting wafers, Model-based design

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PROCEEDINGS ARTICLE | October 30, 2007

DFM for maskmaking: design-aware flexible mask-defect analysis

Proc. SPIE. 6730, Photomask Technology 2007

KEYWORDS: Human-machine interfaces, Reticles, Manufacturing, Inspection, Image transmission, Design for manufacturing, Photomasks, Image enhancement, Electronic design automation, Defect inspection

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We present a novel software system that combines design intent as known by EDA designers with defect inspection results from the maskshop to analyze the severity of defects on photomasks. The software -named Takumi Design- Driven Defect Analyzer (TK-D3A)- analyzes defects by combining actions in the image domain with actions in the design domain and outputs amongst others flexible mask-repair decisions in production formats used by the maskshop. Furthermore, TK-D3A outputs clips of layout (GDS/OASIS) that can be viewed with its graphical user interface for easy review of the defects and associated repair decisions. As inputs the system uses reticle defect-inspection data (text and images) and the respective multi-layer design layouts with the definitions of criticalities. The system does not require confidential design data from IDM, Fabless Design House, or Foundry to be sent to the maskshop and it also has minimal impact on the maskshop's mode of operation. The output of TK-D3A is designed to realize value to the maskshop and its customers in the forms of: 1) improved yield, 2) reduction of delivery times of masks to customers, and 3) enhanced utilization of the maskshop's installed tool base. The system was qualified together with a major IDM on a large set of production reticles in the 90 and beyond-65 nm technology nodes of which results will be presented that show the benefits for maskmaking. The accuracy in detecting defects is extremely high. We show the system's capability to analyze defects well below the pixel resolution of all inspection tools used, as well as the capability to extract multiple types of transmission defects. All of these defects are analyzed design-criticality-aware by TK-D3A, resulting in a large fraction of defects that do not need to be repaired because they are located in non-critical or less-critical parts of the layout, or, more importantly, turn out to be repairable or negligible despite of originally being classified as unrepairable when no such criticality knowledge is used. Finally, we show that the runtimes of TK-D3A are relatively short, despite the fact that the system operates on full-chip designs.

PROCEEDINGS ARTICLE | October 30, 2007

Silicon-verified automatic DFM layout optimization: a calibration-lite model-based application to standard cells

Proc. SPIE. 6730, Photomask Technology 2007

KEYWORDS: Semiconductors, Lithography, Calibration, Silicon, Scanning electron microscopy, Design for manufacturing, Optical proximity correction, Optimization (mathematics), Semiconducting wafers, Model-based design

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PROCEEDINGS ARTICLE | December 6, 2004

Device analysis: a way to reduce patterning cost at mask and wafer level?

Proc. SPIE. 5567, 24th Annual BACUS Symposium on Photomask Technology

KEYWORDS: Reticles, Optical lithography, Image processing, Silicon, Photomasks, Field effect transistors, Optical proximity correction, Critical dimension metrology, Semiconducting wafers, Device simulation

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PROCEEDINGS ARTICLE | May 28, 2004

A 90-nm design-rule patterning application using alt-PSM with KrF lithography for volume manufacturing at k1=0.27

Proc. SPIE. 5377, Optical Microlithography XVII

KEYWORDS: Semiconductors, Lithography, Monochromatic aberrations, Optical lithography, Manufacturing, Photomasks, Nanoimprint lithography, Photoresist processing, Semiconducting wafers, Phase shifts

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PROCEEDINGS ARTICLE | May 3, 2004

A 65-nm node SRAM solution using alt-PSM with ArF lithography

Proc. SPIE. 5379, Design and Process Integration for Microelectronic Manufacturing II

KEYWORDS: Lithography, Lithographic illumination, Manufacturing, Control systems, Photomasks, Critical dimension metrology, Semiconducting wafers, Optics manufacturing, Binary data, Fiber optic illuminators

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PROCEEDINGS ARTICLE | June 26, 2003

Extending ArF to the 65-nm node with full-phase lithography

Proc. SPIE. 5040, Optical Microlithography XVI

KEYWORDS: Lithography, Diffraction, Logic, Optical lithography, Chromium, Scanning electron microscopy, Printing, Photomasks, Optical proximity correction, Binary data

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PROCEEDINGS ARTICLE | June 26, 2003

Full phase-shifting methodology for 65-nm node lithography

Proc. SPIE. 5040, Optical Microlithography XVI

KEYWORDS: Lithography, Quartz, Scanners, Printing, Photomasks, Optical proximity correction, Semiconducting wafers, Binary data, 193nm lithography, Phase shifts

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PROCEEDINGS ARTICLE | June 2, 2003

Use of silicon-versus-layout verification (SiVL) in process control of wafer lithography and mask-making metrology

Proc. SPIE. 5038, Metrology, Inspection, and Process Control for Microlithography XVII

KEYWORDS: Lithography, Metrology, Error analysis, Silicon, Process control, Photomasks, Computed tomography, Optical proximity correction, Semiconducting wafers, Binary data

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PROCEEDINGS ARTICLE | December 27, 2002

Mask error enhancement-factor (MEEF) metrology using automated scripts in CATS

Proc. SPIE. 4889, 22nd Annual BACUS Symposium on Photomask Technology

KEYWORDS: Semiconductors, Reticles, Metrology, Image processing, Photomasks, Computed tomography, Optical proximity correction, Critical dimension metrology, Semiconducting wafers, Binary data

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PROCEEDINGS ARTICLE | July 30, 2002

Aerial image simulations of soft and phase defects in 193-nm lithography for 100-nm node

Proc. SPIE. 4691, Optical Microlithography XV

KEYWORDS: Lithography, Reticles, Transparency, Chromium, Printing, Photomasks, Critical dimension metrology, Antimony, Binary data, Resolution enhancement technologies

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PROCEEDINGS ARTICLE | July 30, 2002

Model-based corrections for complementary phase-shift mask toward 70-nm technology node

Proc. SPIE. 4691, Optical Microlithography XV

KEYWORDS: Model-based design

PROCEEDINGS ARTICLE | March 11, 2002

Performance optimization of the double-exposure alternating PSM for (sub-)100-nm ICs

Proc. SPIE. 4562, 21st Annual BACUS Symposium on Photomask Technology

KEYWORDS: Reticles, Logic, Optical lithography, Etching, Scanning electron microscopy, Photomasks, Optical proximity correction, Semiconducting wafers, Binary data, Resolution enhancement technologies

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PROCEEDINGS ARTICLE | March 11, 2002

New generation photomasks: 193-nm defect printability study

Proc. SPIE. 4562, 21st Annual BACUS Symposium on Photomask Technology

KEYWORDS: Lithography, Optical lithography, Lithographic illumination, Image processing, Printing, Photomasks, Critical dimension metrology, Semiconducting wafers, Binary data, Resolution enhancement technologies

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