Mr. Frank Goodwin Profile

Mr. Frank Goodwin

EUV Mask Defect Reduction Manager at SUNY Poly SEMATECH

SPIE Involvement:

Conference Program Committee | Author

Publications (47)

PROCEEDINGS ARTICLE | April 6, 2015

Application of differential phase contrast imaging to EUV mask inspection: a numerical study

Proc. SPIE. 9422, Extreme Ultraviolet (EUV) Lithography VI

KEYWORDS: Infrared imaging, Phase contrast, Defect detection, Inspection, Phase shift keying, Computer simulations, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Defect inspection

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PROCEEDINGS ARTICLE | April 6, 2015

Magnetron sputtering for the production of EUV mask blanks

Proc. SPIE. 9422, Extreme Ultraviolet (EUV) Lithography VI

KEYWORDS: Multilayers, Sputter deposition, Silicon, Manufacturing, Reflectivity, Ion beams, Photomasks, Extreme ultraviolet, Semiconducting wafers, EUV optics

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PROCEEDINGS ARTICLE | April 6, 2015

SEMATECH produces defect-free EUV mask blanks: defect yield and immediate challenges

Proc. SPIE. 9422, Extreme Ultraviolet (EUV) Lithography VI

KEYWORDS: Silica, Manufacturing, Inspection, Reflectivity, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Deposition processes, Ruthenium, Standards development

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PROCEEDINGS ARTICLE | July 28, 2014

Ruthenium (Ru) peeling and predicting robustness of the capping layer using finite element method (FEM) modeling

Proc. SPIE. 9256, Photomask and Next-Generation Lithography Mask Technology XXI

KEYWORDS: Oxides, Interfaces, Silicon, Oxygen, Finite element methods, Photomasks, Extreme ultraviolet, Neodymium, Ruthenium, Oxidation

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PROCEEDINGS ARTICLE | July 28, 2014

Extreme ultraviolet mask roughness: requirements, characterization, and modeling

Proc. SPIE. 9256, Photomask and Next-Generation Lithography Mask Technology XXI

KEYWORDS: Lithography, Speckle, Scattering, Inspection, Atomic force microscopy, Photomasks, Extreme ultraviolet, Line width roughness, Line edge roughness, Scatter measurement

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PROCEEDINGS ARTICLE | April 17, 2014

Direct measurement of carbon contamination topography on patterned EUV masks

Proc. SPIE. 9048, Extreme Ultraviolet (EUV) Lithography V

KEYWORDS: Carbon, Contamination, Photons, Silicon, Transmission electron microscopy, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers, Ruthenium

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PROCEEDINGS ARTICLE | April 17, 2014

Driving the industry towards a consensus on high numerical aperture (high-NA) extreme ultraviolet (EUV)

Proc. SPIE. 9048, Extreme Ultraviolet (EUV) Lithography V

KEYWORDS: Mirrors, Optical lithography, Imaging systems, Scanners, Reflectivity, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers, 3D image processing

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PROCEEDINGS ARTICLE | April 17, 2014

Production of EUV mask blanks with low killer defects

Proc. SPIE. 9048, Extreme Ultraviolet (EUV) Lithography V

KEYWORDS: Multilayers, Silica, Ions, Inspection, Transmission electron microscopy, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Failure analysis, Ruthenium

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PROCEEDINGS ARTICLE | March 18, 2014

Mitigation of EUV mask blank substrate pit and scratch defects by Accelerated Neutral Atom Beam (ANAB) processing

Proc. SPIE. 9048, Extreme Ultraviolet (EUV) Lithography V

KEYWORDS: Polishing, Argon, Chemical species, Sputter deposition, Ions, Surface roughness, Photomasks, Extreme ultraviolet, Surface finishing, Chemical mechanical planarization

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PROCEEDINGS ARTICLE | October 3, 2013

Investigation of EUVL reticle capping layer peeling under wet cleaning

Proc. SPIE. 8880, Photomask Technology 2013

KEYWORDS: Reticles, Ultraviolet radiation, Mercury, Lamps, Reflectivity, Oxygen, Photomasks, Extreme ultraviolet lithography, Semiconducting wafers, Ruthenium

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PROCEEDINGS ARTICLE | October 1, 2013

Recent advances in SEMATECH's mask blank development program, the remaining technical challenges, and future outlook

Proc. SPIE. 8886, 29th European Mask and Lithography Conference

KEYWORDS: Multilayers, Optical lithography, Ions, Coating, Reflectivity, Ion beams, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Deposition processes

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The ability of optical lithography to steadily produce images at increasingly smaller dimension while maintaining pattern fidelity of devices with greater complexity has enabled the success of Moore’s Law. Although 193 nm immersion and double patterning techniques have proven successful in extending optical lithography, the strategies proposed for further extension are too costly to support device manufacturing. As a result, greater focus has been shifted to resolving the challenges hindering extreme ultraviolet lithography (EUVL) adoption as the mainstream lithography solution. While similar to conventional optical lithography, there are unique challenges to EUVL, one of which is the change from transmission masks to the reflective masks required for EUVL. The use of reflective reticles greatly increases complexity of EUV reticle structure when compared to the binary masks used with optical lithography. Maximizing the reflectance an EUV mask requires the use of a multilayer Bragg reflector deposited on a finely polished substrate with a thin absorber film on top used to define the device pattern. Although similar in form to the substrates used in optical lithography, the tolerances on figure, surface finish, and defects are significantly more stringent for EUV substrates. Control of aberrations and maintaining pattern fidelity places tight constraints on the flatness and roughness of the EUV substrate; imperfections and particles can result in printable defects. The Bragg reflector of the EUV mask consists of 40 to 50 Si/Mo bi-layers deposited using an ion beam deposition tool. This film stack must be deposited to meet the reflectivity and uniformity requirements of the exposure tool and must be completely free of defects. The absorber film is typically a tantalum-based nitride layer selected for its ability to absorb EUV radiation and maintain thermal stability. The thickness and morphology of this film must be tightly controlled to enable use as the patterning film for the device. In addition to the increase in complexity of the mask, introduction of EUVL requires infrastructure development of new substrate, mask blank, and finished reticle inspection tools and techniques for handling and storage of a mask without a pellicle. This paper will highlight recent advances in the ability to produce pilot line quality EUV mask blanks to meet the near-term requirements and review the existing technology gaps which must be closed to extend the current capability to meet HVM needs. A special focus will be put on substrate and mask blank defect densities; other process and infrastructure challenges will also be discussed.

PROCEEDINGS ARTICLE | September 23, 2013

EUV scatterometry-based measurement method for the determination of phase roughness

Proc. SPIE. 8880, Photomask Technology 2013

KEYWORDS: Multilayers, Scattering, Coating, Reflectivity, Surface roughness, Atomic force microscopy, Scatterometry, Photomasks, Extreme ultraviolet, Scatter measurement

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PROCEEDINGS ARTICLE | June 28, 2013

Defect printability studies at SEMATECH

Proc. SPIE. 8701, Photomask and Next-Generation Lithography Mask Technology XX

KEYWORDS: Data modeling, Calibration, Inspection, Printing, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Critical dimension metrology, Semiconducting wafers, Double positive medium

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PROCEEDINGS ARTICLE | April 1, 2013

Low thermal expansion material (LTEM) cleaning and optimization for extreme ultraviolet (EUV) blank deposition