Mr. Frank Goodwin Profile

Frank Goodwin

EUV Mask Defect Reduction Manager at SUNY Poly SEMATECH

SPIE Involvement:

Conference Program Committee | Author

Publications (47)

PROCEEDINGS ARTICLE | April 6, 2015

Application of differential phase contrast imaging to EUV mask inspection: a numerical study

Proc. SPIE. 9422, Extreme Ultraviolet (EUV) Lithography VI

KEYWORDS: Extreme ultraviolet, Inspection, Phase contrast, Photomasks, Extreme ultraviolet lithography, Defect inspection, Computer simulations, Infrared imaging, Phase shift keying, Defect detection

Read Abstract

PROCEEDINGS ARTICLE | April 6, 2015

Magnetron sputtering for the production of EUV mask blanks

Proc. SPIE. 9422, Extreme Ultraviolet (EUV) Lithography VI

KEYWORDS: Photomasks, Extreme ultraviolet, Reflectivity, Sputter deposition, Multilayers, Semiconducting wafers, Ion beams, Manufacturing, Silicon, EUV optics

Read Abstract

PROCEEDINGS ARTICLE | April 6, 2015

SEMATECH produces defect-free EUV mask blanks: defect yield and immediate challenges

Proc. SPIE. 9422, Extreme Ultraviolet (EUV) Lithography VI

KEYWORDS: Photomasks, Extreme ultraviolet, Inspection, Extreme ultraviolet lithography, Silica, Deposition processes, Standards development, Manufacturing, Ruthenium, Reflectivity

Read Abstract

PROCEEDINGS ARTICLE | July 28, 2014

Ruthenium (Ru) peeling and predicting robustness of the capping layer using finite element method (FEM) modeling

Proc. SPIE. 9256, Photomask and Next-Generation Lithography Mask Technology XXI

KEYWORDS: Ruthenium, Silicon, Extreme ultraviolet, Finite element methods, Interfaces, Oxides, Oxygen, Neodymium, Photomasks, Oxidation

Read Abstract

PROCEEDINGS ARTICLE | July 28, 2014

Extreme ultraviolet mask roughness: requirements, characterization, and modeling

Proc. SPIE. 9256, Photomask and Next-Generation Lithography Mask Technology XXI

KEYWORDS: Photomasks, Extreme ultraviolet, Speckle, Line width roughness, Inspection, Atomic force microscopy, Lithography, Scattering, Scatter measurement, Line edge roughness

Read Abstract

PROCEEDINGS ARTICLE | April 17, 2014

Direct measurement of carbon contamination topography on patterned EUV masks

Proc. SPIE. 9048, Extreme Ultraviolet (EUV) Lithography V

KEYWORDS: Contamination, Extreme ultraviolet, Photomasks, Carbon, Transmission electron microscopy, Extreme ultraviolet lithography, Photons, Silicon, Semiconducting wafers, Ruthenium

Read Abstract

PROCEEDINGS ARTICLE | April 17, 2014

Driving the industry towards a consensus on high numerical aperture (high-NA) extreme ultraviolet (EUV)

Proc. SPIE. 9048, Extreme Ultraviolet (EUV) Lithography V

KEYWORDS: Photomasks, Extreme ultraviolet, Mirrors, Semiconducting wafers, Extreme ultraviolet lithography, Scanners, Imaging systems, 3D image processing, Reflectivity, Optical lithography

Read Abstract

PROCEEDINGS ARTICLE | April 17, 2014

Production of EUV mask blanks with low killer defects

Proc. SPIE. 9048, Extreme Ultraviolet (EUV) Lithography V

KEYWORDS: Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Inspection, Ruthenium, Failure analysis, Transmission electron microscopy, Ions, Silica, Multilayers

Read Abstract

PROCEEDINGS ARTICLE | March 18, 2014

Mitigation of EUV mask blank substrate pit and scratch defects by Accelerated Neutral Atom Beam (ANAB) processing

Proc. SPIE. 9048, Extreme Ultraviolet (EUV) Lithography V

KEYWORDS: Chemical species, Extreme ultraviolet, Photomasks, Sputter deposition, Surface roughness, Argon, Surface finishing, Ions, Polishing, Chemical mechanical planarization

Read Abstract

PROCEEDINGS ARTICLE | October 3, 2013

Investigation of EUVL reticle capping layer peeling under wet cleaning

Proc. SPIE. 8880, Photomask Technology 2013

KEYWORDS: Lamps, Photomasks, Extreme ultraviolet lithography, Ruthenium, Oxygen, Mercury, Reticles, Semiconducting wafers, Reflectivity, Ultraviolet radiation

Read Abstract

PROCEEDINGS ARTICLE | October 1, 2013

Recent advances in SEMATECH's mask blank development program, the remaining technical challenges, and future outlook

Proc. SPIE. 8886, 29th European Mask and Lithography Conference

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Extreme ultraviolet, Reflectivity, Multilayers, Ions, Optical lithography, Ion beams, Deposition processes, Coating

Read Abstract

The ability of optical lithography to steadily produce images at increasingly smaller dimension while maintaining pattern fidelity of devices with greater complexity has enabled the success of Moore’s Law. Although 193 nm immersion and double patterning techniques have proven successful in extending optical lithography, the strategies proposed for further extension are too costly to support device manufacturing. As a result, greater focus has been shifted to resolving the challenges hindering extreme ultraviolet lithography (EUVL) adoption as the mainstream lithography solution. While similar to conventional optical lithography, there are unique challenges to EUVL, one of which is the change from transmission masks to the reflective masks required for EUVL. The use of reflective reticles greatly increases complexity of EUV reticle structure when compared to the binary masks used with optical lithography. Maximizing the reflectance an EUV mask requires the use of a multilayer Bragg reflector deposited on a finely polished substrate with a thin absorber film on top used to define the device pattern. Although similar in form to the substrates used in optical lithography, the tolerances on figure, surface finish, and defects are significantly more stringent for EUV substrates. Control of aberrations and maintaining pattern fidelity places tight constraints on the flatness and roughness of the EUV substrate; imperfections and particles can result in printable defects. The Bragg reflector of the EUV mask consists of 40 to 50 Si/Mo bi-layers deposited using an ion beam deposition tool. This film stack must be deposited to meet the reflectivity and uniformity requirements of the exposure tool and must be completely free of defects. The absorber film is typically a tantalum-based nitride layer selected for its ability to absorb EUV radiation and maintain thermal stability. The thickness and morphology of this film must be tightly controlled to enable use as the patterning film for the device. In addition to the increase in complexity of the mask, introduction of EUVL requires infrastructure development of new substrate, mask blank, and finished reticle inspection tools and techniques for handling and storage of a mask without a pellicle. This paper will highlight recent advances in the ability to produce pilot line quality EUV mask blanks to meet the near-term requirements and review the existing technology gaps which must be closed to extend the current capability to meet HVM needs. A special focus will be put on substrate and mask blank defect densities; other process and infrastructure challenges will also be discussed.

PROCEEDINGS ARTICLE | September 23, 2013

EUV scatterometry-based measurement method for the determination of phase roughness

Proc. SPIE. 8880, Photomask Technology 2013

KEYWORDS: Scatterometry, Photomasks, Extreme ultraviolet, Atomic force microscopy, Multilayers, Scatter measurement, Reflectivity, Coating, Surface roughness, Scattering

Read Abstract

PROCEEDINGS ARTICLE | June 28, 2013

Defect printability studies at SEMATECH

Proc. SPIE. 8701, Photomask and Next-Generation Lithography Mask Technology XX

KEYWORDS: Semiconducting wafers, Double positive medium, Photomasks, Critical dimension metrology, Data modeling, Calibration, Extreme ultraviolet, Extreme ultraviolet lithography, Printing, Inspection

Read Abstract

PROCEEDINGS ARTICLE | April 1, 2013

Low thermal expansion material (LTEM) cleaning and optimization for extreme ultraviolet (EUV) blank deposition