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Prof. Frederic P. Aniel
at Institut d'Électronique Fondamentale
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Author
Publications (1)
Proceedings Article | 25 May 2004 Paper
Noise in Si/SiGe and Ge/SiGe MODFET
Frederic Aniel, Mauro Enciso Aguilar, Nicolas Zerounian, Paul Crozat, Thomas Hackbarth, Hans-Joest Herzog, Ulf König
Proceedings Volume 5470, (2004) https://doi.org/10.1117/12.546770
KEYWORDS: Field effect transistors, Silicon, Germanium, Transistors, Monte Carlo methods, Interference (communication), Resistance, Instrument modeling, Gallium arsenide, Doping
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