Prof. Frederic P. Aniel
at Institut d'Électronique Fondamentale
SPIE Involvement:
Author
Publications (1)

PROCEEDINGS ARTICLE | May 25, 2004
Proc. SPIE. 5470, Noise in Devices and Circuits II
KEYWORDS: Germanium, Gallium arsenide, Silicon, Resistance, Interference (communication), Doping, Monte Carlo methods, Transistors, Field effect transistors, Instrument modeling

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