We demonstrated high power semiconductor diode lasers emitting around 2.1 μm with the micro-stripe broad area (MSBA) structure which was proposed to improve the broad area (BA) lasers’ lateral beam quality. 1.28W output power at 7A at continuous wave (CW) operation was achieved from the uncoated MSBA laser. It is shown that the micro-stripe structure would lead to worse threshold current and slope efficiency of the lasers because of the less-pumped lossy regions. However, the MSBA lasers would have better heat dissipation system with proper micro-stripe structure and gain advantages on power performance at high currents.
Here we report the growth method of InGa/GaAs quantum dot (QD) with differnet QD density by manipulating InAs deposition rate from 0.065 ML/s to 0.1 ML/s. Chose the highest density QD as the active region and grow multilayer InAs/GaAs QD with high uniform. Then fabricate a narrow ridge waveguide laser by semiconductor process. The rigid waveguide is 1.8 um high and 5 um wide, and the cavity length is 1mm. The output power of this narrow-rigid laser is 164 mW and central wavelength is 1204.6 nm when the injection current is 0.5 A at 15°C. The threshold current is as low as 35 mA, and threshold current density is 1939 A/cm2.
We report the wavelength tuning of type-II “W” quantum well of interband cascade laser. By changing the thickness of the InAs electron well, the wavelength of the active region is adjusted. We found that the whole 3-4 μm spectra can be realized and the intensity was basically the same by measuring the photoluminescence (PL) of the active region. It showed that the type-II “W” quantum well of interband cascade laser can achieve 3-4 μm range without attenuation. In addition, we calculated the wavelength of quantum well of different InAs thickness by the 8-band k·p method. And we found that the wavelength of the active region varies with the thickness of the InAs electron well, which is consistent with the theory. In addition, the measured wavelength was different from the theoretical wavelength, which may be due to the As incorporation. The incorporation of As into the InGaSb layer will lead to blue shift in the wavelength.
We report on successful fabricating of GaSb-based type-I quantum well distributed Bragg reflector (DBR) lasers emitting at 2080nm. Second-order Bragg gratings of chromium were patterned by electron beam lithography. For 1.5- mm-long laser diode, single mode continuous-wave operation with side mode suppression ratio (SMSR) as high as 30dB is obtained. The line-width of the lasing wave is kept as narrow as 70MHz. The devices show a stable single mode operation with current tuning rate of 0.01nm/mA.
Here we report the solid source molecular beam epitaxy (MBE) growth of high quality of InGaAs/ GaAs quantum dot (QD) structures. A laser device is fabricated by the semiconductor process, including Lithography, Inductively Coupled Plasma (ICP), Plasma Enhanced Chemical Vapor Deposition (PECVD) and Reactive Ion Etching (RIE). The rigid is 100μm wide and cavity is 2000um long. Room temperature continuous-wave (CW) operation with emission wavelength around 1.31μm is presented. Threshold current (Ith) and threshold current density (Jth) is 0.3A and 150A/cm2 at 15°, and output power at Ith=7A reached as high as 1.079W. We also observe that the spectrum shift from 1315nm to 1333nm when the injection currents increase from 1.5A to 3.5A, and the shift speed is 8.72 nm/A.