Prof. Gadi Eisenstein Profile

Prof. Gadi Eisenstein

at Technion-Israel Institute of Technology

SPIE Involvement:

Conference Program Committee | Author

Publications (19)

Proceedings Article | 25 May 2022 Presentation

Quantum optics in room temperature quantum dot ensembles

Gadi Eisenstein

Proceedings Volume PC12141, PC1214101 (2022) https://doi.org/10.1117/12.2627163

KEYWORDS: Quantum dots, Quantum optics, Ultrafast phenomena, Solids, Optical amplifiers, Coherence (optics)

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Proceedings Article | 1 April 2022 Presentation

Dynamic filtering and modulation properties of tunnel-injection based quantum-dot laser devices

Michael Lorke, Igor Khanonkin, Stephan Michael, Gadi Eisenstein, Frank Jahnke

Proceedings Volume PC11995, PC119950B (2022) https://doi.org/10.1117/12.2608142

KEYWORDS: Modulation, Optical filters, Quantum wells, Physics, Optical communications, Telecommunications, Structural design, Optoelectronics, Optical networks, Laser development

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Proceedings Article | 24 February 2020 Paper

On the differences in dynamical properties of quantum-dot lasers with and without p-doping in the active region and tunneling injection quantum wells

Sven Bauer, Vitalii Sichkovskyi, Florian Schnabel, Anna Sengül, Johann Peter Reithmaier, Ori Eyal, Igor Khanonkin, Gadi Eisenstein

Proceedings Volume 11301, 113010A (2020) https://doi.org/10.1117/12.2548498

KEYWORDS: Modulation, Doping, Quantum wells, Indium arsenide, Continuous wave operation, Quantum dots, Molecular beam epitaxy, Semiconductor lasers

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Proceedings Article | 13 March 2019 Presentation

Narrow linewidth InAs/InP quantum dot DFB laser (Conference Presentation)

Tali Septon, Sutapa Gosh , Annette Becker, Vitalii Sichkovskyi, Florian Schnabel, Anna Rippien, Johann Peter Reithmaier, Gadi Eisenstein

Proceedings Volume 10939, 1093906 (2019) https://doi.org/10.1117/12.2511651

KEYWORDS: Quantum dots, Semiconductor lasers, Laser stabilization, Semiconductors, Laser applications, LIDAR, Quantum wells, Solids, Frequency combs

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Proceedings Article | 4 March 2019 Presentation + Paper

MOICANA: monolithic cointegration of QD-based InP on SiN as a versatile platform for the demonstration of high-performance and low-cost PIC transmitters

K. Vyrsokinos, D. Chatzitheocharis, M. Papadovasilakis, D. Ketzaki, C. Calo, C. Caillaud, D. Sacchetto, M. Zervas, J. Reithmaier, V. Sichkovskyi, G. Eisenstein, M. Orenstein, B. Wohlfeil, G. Mehrpoor, E. Mentovich, D. Kalavrouziotis, M. A. G. Porcel, A. Hinojosa

Proceedings Volume 10924, 1092410 (2019) https://doi.org/10.1117/12.2509401

KEYWORDS: Waveguides, Photonic integrated circuits, Silicon, Modulation, Transmitters, Laser sintering, Photonics, Interfaces

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Proceedings Article | 1 March 2019 Paper

Comparison of quantum dot lasers with and without tunnel-injection quantum well

Sven Bauer, Vitalii Sichkovskyi, Florian Schnabel, Anna Sengül, Johann Peter Reithmaier, Ori Eyal, Gadi Eisenstein

Proceedings Volume 10939, 1093904 (2019) https://doi.org/10.1117/12.2511724

KEYWORDS: Modulation, Quantum wells, Continuous wave operation, Indium arsenide, Quantum dot lasers, Pulsed laser operation, Absorption

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Proceedings Article | 23 May 2018 Presentation

How short time scales substitute for cryogenic cooling: quantum coherent effect in room temperature QD amplifiers (Conference Presentation)

Gadi Eisenstein

Proceedings Volume 10682, 106820B (2018) https://doi.org/10.1117/12.2306218

KEYWORDS: Optical amplifiers, Cryogenics, Nanotechnology, Semiconductors, Quantum dots, Physics, Nanostructures, Analytics, Quantum physics, Absorption

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How short time scales substitute for cryogenic cooling: Quantum Coherent Effect in Room Temperature QD Amplifiers Gadi Eisenstein1 and Johann Peter Reithmaier2 1Electrical Engineering Dept. and Russell Berrie Nanotechnology Institute Technion – Israel Institute of Technology, Haifa 32000 Israel 2Technological Physics, Institute of Nanostructure Technologies and Analytics, CINSaT, University of Kassel, 34132 Kassel, Germany Abstract Semiconductor quantum dots (QDs) serve often as a two-level system for studying quantum coherent phenomena. Observation of quantum coherent effects requires observation times that are shorter than the coherence time. In room temperature semiconductor QDs, those times are of the order of 350 fs and therefore it is common to cool the QDs to cryogenic temperatures. A few years ago, we have introduced an alternative approach by which the cooling is substituted for by operation with ultra-short pulses having durations of 100-200 fs. The platform we employ is a 1.5 mm long InAs/InP QD optical amplifier. Measurements use the cross frequency resolved gating (X-FROG) technique and the experiments are accompanied by a comprehensive model that treats the QD amplifier as a cascade of two level system and also considers the QD gain inhomogeneity as well as non-resonant interactions such as two photon absorption and an accompanying Kerr-like effect. Several quantum coherent effects have been demonstrated including Rabi oscillations and self- induced transparency as well as coherent control of the Rabi oscillations achieved by shaping the pulses spectral phase. A modification of the experimental set up by which two pulses in a pump probe configuration are used with each pulse being separately measured using the X-FROG technique enables to demonstrate the optical analog of Ramsey-Resonances. Setting a nominal delay between the input pulses and changing the delay in 1 fs steps, we observe clear Ramsey fringes in the probe amplitude, instantaneous frequency and surprisingly also the separation between the two output pulses. The latter stems from the coupling between the real and imaginary parts of the susceptibility. It is unique to our system as it a cumulative effect that requires a reasonably long propagation distanced and can therefore only be seen in a waveguide configuration and never in a single QD which was used in all previous Ramsey experiments. The last effect is photon echo which was only studied numerically up to now. The talk will survey the various experimental results and will highlight the essence of operating with short pulses to induce and observe quantum coherent effects in room temperature QD amplifiers.

Proceedings Article | 20 February 2017 Presentation + Paper

High-bandwidth temperature-stable 1.55-um quantum dot lasers

S. Banyoudeh, O. Eyal, A. Abdollahinia, F. Schnabel, V. Sichkovskyi, J. Reithmaier, G. Eisenstein

Proceedings Volume 10123, 1012306 (2017) https://doi.org/10.1117/12.2255749

KEYWORDS: Modulation, Quantum dot lasers, Laser communications, Semiconductors, Optoelectronic devices, Digital modulation, Quantum physics, Physics, Continuous wave operation, Pulsed laser operation, Temperature metrology, Laser damage threshold, Epitaxy, Quantum wells

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Proceedings Article | 28 April 2016 Paper

High-speed directly modulated 1.5 µm quantum dot lasers

Johann Reithmaier, Saddam Banyoudeh, Alireza Abdollahinia, Florian Schnabel, Vitalii Sichkovskyi, Ori Eyal, Gadi Eisenstein

Proceedings Volume 9892, 98920A (2016) https://doi.org/10.1117/12.2230231

KEYWORDS: Modulation, Semiconductor lasers, Quantum dot lasers, Laser applications, Semiconductors, Optoelectronic devices, Digital modulation, Data communications, Laser stabilization, Quantum physics, Pulsed laser operation, Eye, Temperature metrology, Continuous wave operation, Indium arsenide

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Proceedings Article | 7 March 2016 Paper

High-speed directly modulated 1.5-um quantum dot lasers

Saddam Banyoudeh, Alireza Abdollahinia, Ori Eyal, Florian Schnabel, Vitalii Sichkovskyi, Gadi Eisenstein, Johann Reithmaier

Proceedings Volume 9767, 97670L (2016) https://doi.org/10.1117/12.2209095

KEYWORDS: Modulation, Laser stabilization, Eye, Quantum dot lasers, Laser damage threshold, Indium arsenide, Quantum dots, Quantum wells, Waveguide lasers

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Proceedings Article | 7 March 2016 Paper

Narrow-linewidth 1.5-um quantum dot distributed feedback lasers

Annette Becker, Vitalii Sichkovskyi, Marko Bjelica, Ori Eyal, Philipp Baum, Anna Rippien, Florian Schnabel, Bernd Witzigmann, Gadi Eisenstein, Johann Reithmaier

Proceedings Volume 9767, 97670Q (2016) https://doi.org/10.1117/12.2209088

KEYWORDS: Semiconductor lasers, Laser communications, Laser processing, Device simulation, Quantum wells, Telecommunications, Quantum dot lasers, Quantum communications, Quantum dots, Laser development, Optical simulations, Data communications, Phase shift keying, Cladding, Measurement devices, Instrument modeling

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Proceedings Article | 14 March 2013 Paper

Extending the direct laser modulation bandwidth by exploiting the photon-photon resonance: modeling, simulations and experiments

M. Dumitrescu, A. Laakso, J. Viheriala, M. Kamp, P. Bardella, G. Eisenstein

Proceedings Volume 8619, 86190A (2013) https://doi.org/10.1117/12.2004976

KEYWORDS: Modulation, Optical simulations, Phase shift keying, Modulation transfer functions, Eye, Terahertz radiation, Optical design, Reflectivity, Laser applications, Shape analysis

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Proceedings Article | 2 February 2012 Paper

Nanophotonics for datacom and telecom applications

D. Bimberg, D. Arsenijevic, H. Schmeckebier, C. Meuer, G. Fiol, G. Eisenstein

Proceedings Volume 8265, 82650E (2012) https://doi.org/10.1117/12.911487

KEYWORDS: Mode locking, Semiconductor optical amplifiers, Microwave radiation, Quantum wells, Quantum dots, Modulation, Semiconductor lasers, Picosecond phenomena, Nanophotonics, Data communications

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Proceedings Article | 17 February 2011 Paper

1.55 μm directly modulated CCIG lasers fabricated by surface-defined lateral feedback gratings

Sohaib Afzal, Florian Schnabel, Wenzel Scholz, Johann-Peter Reithmaier, Gadi Eisenstein, David Gready, Olivier Parillaud, Michel Krakowski, Ivo Montrosset, Marco Vallone

Proceedings Volume 7953, 79530E (2011) https://doi.org/10.1117/12.874043

KEYWORDS: Modulation, Laser development, Etching, Optical design, Lithography, Semiconductor lasers, Quantum wells, Nanoimprint lithography, Phase shift keying, Electron beam lithography

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Proceedings Article | 17 February 2011 Paper

Development of high-speed directly modulated DFB and DBR lasers with surface gratings

M. Dumitrescu, J. Telkkälä, J. Karinen, J. Viheriälä, A. Laakso, S. Afzal, J.-P. Reithmaier, M. Kamp, P. Melanen, P. Uusimaa, P. Bardella, M. Vallone, I. Montrosset, O. Parillaud, M. Krakowski, D. Gready, G. Eisenstein, G. Sek

Proceedings Volume 7953, 79530D (2011) https://doi.org/10.1117/12.875674

KEYWORDS: Modulation, Refractive index, Scanning electron microscopy, Etching, Distributed Bragg reflectors, Laser development, Phase shift keying, Resistance, Waveguides, Cladding

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Proceedings Article | 24 February 2009 Paper

Ultra high-speed nanophotonics

D. Bimberg, G. Fiol, C. Meuer, D. Arsenijevic, J. Kim, S. Liebich, M. Laemmlin, M. Kuntz, H. Schmeckebier, G. Eisenstein

Proceedings Volume 7211, 721117 (2009) https://doi.org/10.1117/12.810880

KEYWORDS: Mode locking, Picosecond phenomena, Modulation, Quantum wells, Semiconductor lasers, Ultrafast phenomena, Hole burning spectroscopy, Quantum dots, Semiconductor optical amplifiers, Nanophotonics

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Proceedings Article | 25 October 2005 Paper

Gain and noise properties of InAs/InP quantum dash semiconductor optical amplifiers

A. Bilenca, D. Hadass, R. Alizon, H. Dery, V. Mikhelashvili, G. Eisenstein, A. Somers, W. Kaiser, S. Deubert, J. Reithmaier, A. Forchel, M. Calligaro, S. Bansropun, M. Krakowski

Proceedings Volume 6014, 601404 (2005) https://doi.org/10.1117/12.631523

KEYWORDS: Optical amplifiers, Quantum wells, Picosecond phenomena, Indium arsenide, Modulation, Semiconductor optical amplifiers, Waveguides, Interference (communication), Quantum dots

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Proceedings Article | 1 April 2005 Paper

Dynamical properties of quantum dash lasers

Gadi Eisenstein, Hanan Dery, D. Hadass, Robert Alizon, Andre Somers, Stefan Deubert, Wolfgang Kaiser, Johann-Peter Reithmaier, Alfred Forchel, Michel Calligaro, Shailendra Bansropun, Michel Krakowski

Proceedings Volume 5738, (2005) https://doi.org/10.1117/12.597132

KEYWORDS: Modulation, Electrons, Scattering, Semiconductor lasers, Plasma, Quantum dot lasers, Quantum dots, Picosecond phenomena, Polarization, Nanolithography

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Proceedings Article | 14 June 2004 Paper

Lasers and amplifiers based on quantum-dot-like gain material

Johann Peter Reithmaier, Stefan Deubert, Roland Krebs, Frank Klopf, Ruth Schwertberger, Andre Somers, Lars Bach, Wolfgang Kaiser, Alfred Forchel, Robert Alizon, D. Hadass, Alberto Bilenca, Hanan Dery, B. Mikhelashvili, Gadi Eisenstein, Michel Calligaro, Shailendra Bansropun, Michel Krakowski

Proceedings Volume 5361, (2004) https://doi.org/10.1117/12.531543

KEYWORDS: Continuous wave operation, Laser damage threshold, Optical amplifiers, Quantum dots, Nanoparticles, Semiconductor lasers, Amplifiers, Laser development, Modulation, Waveguide lasers

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Semiconductor lasers and amplifiers were developed based on self-assembled quantum-dot gain material. This paper gives an overview about the recent work on GaAs- and InP-based quantum-dot devices mainly dedicated for telecom applications. The major advantage of quantum-dot like gain material, i.e. the possibility to tailor the spectral and spatial gain properties of an amplifying material, was used to optimize different device aspects, like low threshold current, broad band amplification or low temperature sensitivity. High performance GaAs-based continuous wave (cw) operating quantum-dot lasers could be fabricated with threshold currents of about 2 mA (L = 400 μm). Single mode emitting devices with emission wavelengths > 1.3 μm were realized by laterally coupled feedback gratings with threshold currents below 5 mA, output powers > 5 mW and cw operation temperatures up to 85 °C. Modulation frequencies of up to 7.5 GHz were obtained for standard device structures. For long wavelength telecom applications quantum-dot like material with dash geometry was developed on InP substrates with basic properties in the transition region between quantum-dot and -wire systems. A very large tuning range of the emission wavelength between 1.2 and 2.0 μm (room temperature) was obtained which allow the realization of material with ultra-wide gain bandwidth. Quantum-dash laser structures reaches threshold current densities < 1 kA/cm². Ridge waveguide lasers with a cavity length of 1.9 mm show cw threshold currents of about 100 mA and maximum output powers > 40 mW per facet. With 300 μm long facet coated devices cw threshold currents of 23 mA and maximum operation temperatures in pulsed mode of 130 °C were achieved. Semiconductor optical amplifiers were fabricated by using broad band quantum-dash material. For a 1.9 mm long device, up to 22 dB gain was obtained with a three times larger spectral range than in comparable quantum well devices. High speed nearly pattern free signal amplification up to 10 GBit/s could be demonstrated and wavelength conversion experiments were performed.

Showing 5 of 19 publications

Conference Committee Involvement (5)

Semiconductor Lasers and Laser Dynamics XI

9 April 2024 | Strasbourg, France

Semiconductor Lasers and Laser Dynamics X

5 April 2022 | Strasbourg, France

Semiconductor Lasers and Laser Dynamics IX

6 April 2020 | Online Only, France

Semiconductor Lasers and Laser Dynamics

23 April 2018 | Strasbourg, France

Semiconductor Lasers and Laser Dynamics

4 April 2016 | Brussels, Belgium

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