The integration of atomically thin materials into semiconductor and photonic foundries is crucial for their use in commercial devices. However, current integration approaches are not compatible with industrial processing on wafer level, which is one of the bottlenecks hindering the breakthrough of 2D materials. Here, we present a generic methodology for the large-area transfer of 2D materials and their heterostructures by adhesive wafer bonding for use at the back end of the line (BEOL). Our approach exclusively uses processes and materials readily available in most largescale semiconductor manufacturing lines. Experimentally, we demonstrated the transfer of CVD graphene from Cu foils to 100-mm-diameter silicon wafers, the stacking of two monolayers of graphene to 2-layer graphene, and the formation of MoS2/graphene heterostructures by two consecutive transfers. We expect that our methodology is an important step towards the commercial use of 2D materials for a wide range of applications in optics and photonics.
The integration of carbon nanotubes (CNTs) into conventional silicon-technology with potential applications as interconnects, transistors, memory-cells, and sensors is an promising goal. Theoretical and experimental results indicate that CNT-based devices can outperform conventional silicon microelectronics. Concepts for the creation of vertical interconnects and transistors made out of CNTs, which allow a large scale integration, are presented. A vital step for their realization is the synthesis of individual CNTs with controlled diameters at lithographically predefined locations. Employing catalyst mediated Chemical Vapor Deposition (CVD) isolated CNTs have been grown out of holes in silicon dioxide which have been created by optical lithography. This allows the precise placement of individual CNTs on silicon substrates. Furthermore, the diameter of each CNT adjusts to the hole size, which makes it possible to control this important property separately for individual CNTs. In combination with the vertical integration concept those findings constitute a milestone in the parallel manufacture of nanotube-based devices with scalable batch processes.
Conference Committee Involvement (1)
Nanotechnology
19 May 2003 | Maspalomas, Gran Canaria, Canary Islands, Spain
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