Microprocessor product density and performance trends have continued to follow the course predicted by Moore's Law. To support the trends in the future and build logic products approaching one billion or more transistors before the end of the decade, several challenges must be met. These challenges include: (1) maintaining transistor/interconnect feature scaling, (2) the increasing power density dilemma, (3) increasing relative difficulty of 2D feature resolution and general critical dimension control, (4) identifying cost effective solutions to increasing process and design database complexity. The trend in transistor scaling can be maintained while addressing the power density issue with new transistor structures exemplified by the Depleted Substrate Transistor incorporating a raised source-drain and high-K gate dielectric. The general 2D patterning and resolution control problems will require several solution approaches both through design and technology e.g. reduce design degrees of freedom, use of simpler arrayed structures, improved uniformity, improved tools, etc. The data base complexity/cost problem will require solutions likely to involve use of improved data structure, improved use of hierarchy, and improved software and hardware solutions.
Historical microprocessor product trends show an increase in product frequency of 1.25x per year and a transistor count increase of 1.4x per year since the early 70s. This tend is forecast to continue over the next decade to the 0.07 micrometer generation. To support the trend, challenges in lithography, transistor definition, interconnect system, and manufacturability must be overcome. Solutions to the lithography challenge, will require successful implementation of 157 nm optical or next generation lithography (NGL). The transistor solution will require integration of sub 2.0 nm gate oxides with improved gate electrode materials, improved low resistance shallow source-drain technology, advanced channel dopant engineering, and operation at or below 1.0 v. Interconnect challenges will require support of 10 or more interconnect layers using low resistivity metalization and reduced epsilon dielectric. Manufacturing challenges require support of larger die sizes, integrated at higher technology complexity, while maintaining lowest possible cost.
Historical microprocessor product trends show an increase in product frequency of 1.25X per year and a transistor count increase of 1.4X per year since the early 70s. This trend is forecast to continue over the next decade to the 0.07 micrometer generation. To support the trend, challenges in lithography, transistor definition, interconnect system, and manufacturability must be overcome. Solutions to the lithography challenge, will require successful implementation of 157 nm optical or next generation lithography (NGL). The transistor solution will require integration of sub 2.0 nm gate oxides with improved gate electrode materials, improved low resistance shallow source-drain technology, advanced channel dopant engineering and operation at or below 1.0 v. Interconnect challenges will require support of 10 or more interconnect layers using low resistivity metalization and reduced epsilon dielectric. Manufacturing challenges require support of larger die sizes, integrated at higher technology complexity, while maintaining lowest possible cost.
Historical microprocessor product trends show an increase in product frequency of 1.25x per year and a transistor count increase of 1.4x per year since the early 70's. This trend is forecast to continue over the next decade to the 0.07micrometers generation. To support the trend, challenges in lithography, transistor definition, interconnect system, and manufacturability must be overcome. Solutions to the lithography challenge, will require successful implementation of 157nm optical or next generation lithography. The transistor solution will require integration of sub 2.0nm gate oxides with improved low resistance shallow source-drain technology, advanced channel dopant engineering, and operation at or below 1.0v. Interconnect challenges will require support of 10 or more interconnect layers using low resistivity metalization and reduced epsilon dielectric. Manufacturing challenges require support of larger die sizes, integrate data higher technology complexity, while maintaining lowest possible cost.
Historical microprocessor product trends show an increase in product frequency of 1.25x per year and a transistor count increase of 1.4x per year since the early 70's. This trend is forecast to continue over the next decade to the 0.07micrometers generation. To support the trend, challenges in lithography, transistor definition, interconnect system, and manufacturability must be overcome. Solutions to the lithography challenge,s will require successful implementation of 157 nm optical or next generation lithography. The transistor solution will require integration of sub 2.0nm gate oxides with improved gate electrode materials, improved low resistance shallow source- drain technology, advanced channel dopant engineering, and operation at or below 1.0v. Interconnect challenges will require support of 10 or more interconnect layers using lower resistivity metalization and reduced epsilon dielectric. Manufacturing challenges require support of larger die sizes, integrated at higher technology complexity, while maintaining lowest possible cost.
Historical microprocessor product trends show an increase in product frequency of 1.25x per year and a transistor count increase of 1.4x per year since the early 70's. This trend is forecast to continue over the next decade to the 0.07 micrometers generation. To support the trend, challenges in lithography, transistor definition, interconnect system, and manufacturability must be overcome. Solutions to the lithography challenge, will require successful implementation of 157nm optical or next generation lithography. The transistor solution will require integration of sub 2.0nm gate oxides with improved gate electrode materials, improved low resistance shallow source- drain technology, advanced channel dopant engineering, and operation at or below 1.0v. Interconnect challenges will require support of 10 or more interconnect layers using low resistivity metallization and reduce epsilon dielectric. Manufacturing challenges require support of larger die sizes, integrated at higher technology complexity, while maintaining lowest possible cost.
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