Dr. Gérard Destéfanis Profile

Dr. Gérard Destéfanis

at CEA-LETI

SPIE Involvement:

Conference Program Committee | Author

Publications (69)

Proceedings Article | 17 November 2017

Development and characterisation of MCT detectors for space astrophysics at CEA

O. Boulade, N. Baier, P. Castelein, C. Cervera, P. Chorier, G. Destefanis, B. Fièque, O. Gravrand, F. Guellec, V. Moreau, P. Mulet, F. Pinsard, J.-P. Zanatta

Proc. SPIE. 10563, International Conference on Space Optics — ICSO 2014

KEYWORDS: Readout integrated circuits, Photovoltaics, Liquid phase epitaxy, Sensors, Diffusion, Quantum efficiency, Diodes, Epitaxy, Astrophysics, Standards development

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The Laboratoire Electronique et Traitement de l’Information (LETI) of the Commissariat à l’Energie Atomique (CEA, Grenoble, France) has been involved in the development of infrared detectors based on HgCdTe (MCT) material for over 30 years, mainly for defence and security programs [1]. Once the building blocks are developed at LETI (MCT material process, diode technology, hybridization, …), the industrialization is performed at SOFRADIR (also in Grenoble, France) which also has its own R&D program [2]. <br/> In past years, LETI also developed infrared detectors for space astrophysics in the mid infrared range – the long wave detector of the ISOCAM camera onboard ISO – as well as in the far infrared range – the bolometer arrays of the Herschel/PACS photometer unit –, both instruments which were under the responsibility of the Astrophysics department of CEA (IRFU/SAp, Saclay, France).<p> </p>Nowadays, the infrared detectors used in space and ground based astronomical instruments all come from vendors in the US. For programmatic reasons – increase the number of available vendors, decrease the cost, mitigate possible export regulations, …– as well as political ones – spend european money in Europe –, the European Space Agency (ESA) defined two roadmaps (one in the NIR-SWIR range, one in the MWIR-LWIR range) that will eventually allow for the procurement of infrared detectors for space astrophysics within Europe. <br/> The French Space Agency (CNES) also started the same sort of roadmaps, as part of its contribution to the different space missions which involve delivery of instruments by French laboratories. It is important to note that some of the developments foreseen in these roadmaps also apply to Earth Observations. <br/> One of the main goal of the ESA and CNES roadmaps is to reduce the level of dark current in MCT devices at all wavelengths. The objective is to use the detectors at the highest temperature where the noise induced by the dark current stays compatible with the photon noise, as the detector operating temperature has a very strong impact at system level. A consequence of reaching low levels of dark current is the need for very low noise readout circuits.<p> </p>CEA and SOFRADIR are involved in a number of activities that have already started in this framework. CEA/LETI does the development of the photo-voltaic (PV) layers – MCT material growth, diode technologies–, as well as some electro-optical characterisation at wafer, diode and hybrid component levels, and CEA/IRFU/SAp does all the electro-optical characterisation involving very low flux measurements (mostly dark current measurements). Depending of the program, SOFRADIR can also participate in the development of the hybrid components, for instance the very low noise readout circuits (ROIC) can be developed either at SOFRADIR or at CEA/LETI. <br/> Depending of the component specifications, the MCT epitaxy can be either liquid phase (LPE, which is the standard at SOFRADIR for production purposes) or molecular beam (MBE), the diode technology can be n/p (standard at LETI and SOFRADIR) or p/n (under development for several years now) [3], and the input stage of the ROIC can be Source Follower per Detector (SFD for very low flux low noise programs) or Capacitive Trans Impedance Amplifier (CTIA for intermediate flux programs) [4].<p> </p>This paper will present the different developments and results obtained so far in the two NIR-SWIR and MWIR-LWIR spectral ranges, as well as the perspectives for the near future. CEA/LETI is also involved in the development of MCT Avalanche Photo Diodes (APD) that will be discussed in other papers [5,6].

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Proceedings Article | 17 November 2017

Discussion about photodiode architectures for space applications

O. Gravrand, G. Destefanis, C. Cervera, J.-P. Zanatta, N. Baier, A. Ferron, O. Boulade

Proc. SPIE. 10563, International Conference on Space Optics — ICSO 2014

KEYWORDS: Staring arrays, Long wavelength infrared, Mercury cadmium telluride, Diffusion, Quantum efficiency, Doping, Photodiodes, Diodes, Astronomical imaging, Heterojunctions

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Detection for space application is very demanding on the IR detector: all wavelengths, from visible-NIR (2- 3um cutoff) to LWIR (10-12.5um cutoff), even sometimes VLWIR (15um cutoff) may be of interest. Moreover, various scenarii are usually considered. Some are imaging applications where the focal plane array (FPA) is used as an optical element to sense an image. However, the FPA may also be used in spectrometric applications where light is triggered on the different pixels depending on its wavelength. In some cases, star pointing is another use of FPAs where the retina is used to sense the position of the satellite.<p> </p>In all those configurations, we might distinguish several categories of applications: <br/> • low flux applications where the FPA is staring at space and the detection occurs with only a few number of photons. <br/> • high flux applications where the FPA is usually staring at the earth. In this case, the black body emission of the earth and its atmosphere ensures usually a large number of photons to perform the detection.<p> </p>Those two different categories are highly dimensioning for the detector as it usually determines the <strong>level of dark current</strong> and <strong>quantum efficiency</strong> (QE) requirements. Indeed, high detection performance usually requires a large number of integrated photons such that high QE is needed for low flux applications, in order to limit the integration time as much as possible. Moreover, dark current requirement is also directly linked to the expected incoming flux, in order to limit as much as possible the SNR degradation due to dark charges vs photocharges. Note that in most cases, this dark current is highly depending on operating temperature which dominates detector consumption. A classical way to mitigate dark current is to cool down the detector to very low temperatures.<p> </p>This paper won't discuss the need for wavefront sensing where the number of detected photons is low because of a very narrow integration window. Rigorously, this kind of configuration is a low flux application but the need for speed distinguishes it from other low flux applications as it usually requires a different ROIC architecture and a photodiode optimized for high response speed.

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Proceedings Article | 11 June 2015

Infrared SWAP detectors: pushing the limits

Yann Reibel, R. Taalat, A. Brunner, L. Rubaldo, T. Augey, A. Kerlain, N. Péré-Laperne, A. Manissadjian, O. Gravrand, P. Castelein, G. Destéfanis

Proc. SPIE. 9451, Infrared Technology and Applications XLI

KEYWORDS: Staring arrays, Infrared detectors, Thermography, Infrared imaging, Mercury cadmium telluride, Sensors, Manufacturing, Infrared radiation, Standards development, Image quality standards

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Proceedings Article | 11 June 2015

Low-dark current p-on-n MCT detector in long and very long-wavelength infrared

C. Cervera, N. Baier, O. Gravrand, L. Mollard, C. Lobre, G. Destefanis, J.P. Zanatta, O. Boulade, V. Moreau

Proc. SPIE. 9451, Infrared Technology and Applications XLI

KEYWORDS: Long wavelength infrared, Liquid phase epitaxy, Mercury cadmium telluride, Sensors, Diffusion, Quantum efficiency, Doping, Photodiodes, Infrared radiation, Heterojunctions

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Proceedings Article | 4 June 2015

Update on 10µm pixel pitch MCT-based focal plane array with enhanced functionalities

Yann Reibel, Nicolas Péré-Laperne, Laurent Rubaldo, Thibault Augey, Gilbert Decaens, Vincent Badet, Laurent Baud, Julien Roumegoux, Antoine Kessler, Patrick Maillart, Nicolas Ricard, Olivier Pacaud, Gérard Destéfanis

Proc. SPIE. 9451, Infrared Technology and Applications XLI

KEYWORDS: Staring arrays, Readout integrated circuits, Infrared detectors, Signal to noise ratio, Mercury cadmium telluride, Sensors, Image resolution, Image quality, Modulation transfer functions, Analog electronics

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Proceedings Article | 24 June 2014

Getting small, new 10µm pixel pitch cooled infrared products

Y. Reibel, N. Pere-Laperne, T. Augey, L. Rubaldo, G. Decaens, M.-L. Bourqui, A. Manissadjian, D. Billon-Lanfrey, S. Bisotto, O. Gravrand, G. Destefanis, G. Druart, N. Guerineau

Proc. SPIE. 9070, Infrared Technology and Applications XL

KEYWORDS: Staring arrays, Signal to noise ratio, Infrared imaging, Mid-IR, Imaging systems, Cameras, Sensors, Infrared radiation, Analog electronics, Image quality standards

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Proceedings Article | 24 June 2014

Latest developments in the p-on-n HgCdTe architecture at DEFIR

P. Castelein, N. Baier, O. Gravrand, L. Mollard, D. Brellier, F. Rochette, A. Kerlain, L. Rubaldo, Y. Reibel, G. Destefanis

Proc. SPIE. 9070, Infrared Technology and Applications XL

KEYWORDS: Staring arrays, Long wavelength infrared, Mid-IR, Liquid phase epitaxy, Sensors, Diffusion, Doping, Photodiodes, Diodes, Temperature metrology

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Proceedings Article | 25 October 2013

Large format, small pixel pitch and hot detectors at SOFRADIR

Y. Reibel, A. Rouvie, A. Nedelcu, T. Augey, N. Pere-Laperne, L. Rubaldo, D. Billon-Lanfrey, O. Gravrand, J. Rothman, G. Destefanis

Proc. SPIE. 8896, Electro-Optical and Infrared Systems: Technology and Applications X

KEYWORDS: Staring arrays, Infrared detectors, Infrared sensors, Mid-IR, Indium gallium arsenide, Sensors, Infrared radiation, Infrared technology, Medium wave, Quantum well infrared photodetectors

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Proceedings Article | 18 June 2013

MCT planar p-on-n LW and VLW IRFPAs

N. Baier, L. Mollard, O. Gravrand, G. Bourgeois, J.-P. Zanatta, G. Destefanis, O. Boulade, V. Moreau, F. Pinsard, L. Tauziède, A. Bardoux, L. Rubaldo, A. Kerlain, J.-C. Peyrard

Proc. SPIE. 8704, Infrared Technology and Applications XXXIX

KEYWORDS: Staring arrays, Readout integrated circuits, Long wavelength infrared, Liquid phase epitaxy, Mercury cadmium telluride, Sensors, Diffusion, Photodiodes, Transmission electron microscopy, Neodymium

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In this paper, we report on results obtained both at CEA/LETI and SOFRADIR on <i>p-on-n</i> HgCdTe (MCT) grown by liquid phase epitaxy (LPE) Infra-Red Focal Plane Arrays (IR FPAs) for the Long-wave (LW) and the Very-long-wave (VLW) spectral ranges. For many years, <i>p-on-n </i>arsenic-ion implanted planar technology has been developed and improved within the framework of the joint laboratory DEFIR. Compared to <i>n-on-p,</i> <i>p-on-n</i> technology presents lower dark current and series resistance. Consequently, <i>p-on-n</i> photodiodes are well-adapted for very large FPAs operating either at high temperature or very low flux. The long wave (LW) spectral ranges have been firstly addressed with TV/4, 30 µm pitch FPAs. Our results showed state-of-the-art detector performances, consistent with "Rule 07" law [1], a relevant indicator of the maturity of photodiode technology. The low dark current allows increasing the operating temperature without any degradation of the performances. The subsequent development of <i>p-on-n</i> imagers has produced more compact, less energy consuming systems, with a substantial resolution enhancement. Space applications are another exciting but challenging domains and are good candidates for the <i>p-on-n</i> technology. For this purpose, TV/4 arrays, 30 µm pixel pitch, have been manufactured for the very long wave spectral range. For this detection range, the quality of material and reliability of technology are the most critical. Detectors with different cutoff wavelength have been manufactured to aim 12.5 µm at 78K, 12.5 µm at 40K and 15 µm at 78K. Electro-optical characterizations reveal homogeneous imagers with excellent current operabilities (over 99.9% at best). The results highlight the very good quality of <i>p-on-n</i> technology with carrier diffusion limited dark current, fitting the "Rule 07" law, and high quantum efficiency. Further process developments have been made to improve photodiodes performances. Especially the transition temperature where the dark current shifts from diffusion limited regime to another one, has been lowered by more than 10K. Extremely low dark current has been obtained, down to 50 e<sup>-</sup>/s/pixel.

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Proceedings Article | 11 June 2013

High-performance and long-range cooled IR technologies in France

Yann Reibel, Thibault Augey, Sebastien Verdet, Patrick Maillart, Laurent Rubaldo, David Billon-Lanfrey, Laurent Mollard, François Marion, Nicolas Baier, Gérard Destefanis

Proc. SPIE. 8704, Infrared Technology and Applications XXXIX

KEYWORDS: Staring arrays, Infrared detectors, Signal to noise ratio, Infrared sensors, Mid-IR, Avalanche photodetectors, Sensors, Infrared radiation, Infrared technology, Medium wave

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Proceedings Article | 19 November 2012

Overview of p-on-n planar IRFPAs at DEFIR

L. Mollard, O. Gravrand, N. Baier, G. Destefanis, G. Bourgeois, S. Gout, F. Rochette, A. Kerlain, L. Rubaldo, A. Manissadjian, O. Boulade

Proc. SPIE. 8533, Sensors, Systems, and Next-Generation Satellites XVI

KEYWORDS: Staring arrays, Long wavelength infrared, Mid-IR, Short wave infrared radiation, Mercury cadmium telluride, Imaging systems, Ions, Photodiodes, Neodymium, Medium wave

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In this paper, we report on results obtained both at CEA/LETI and SOFRADIR on p-on-n Infra-Red Focal Plane Arrays (IR FPAs) from the Short-Wave (SW) to the Very-Long-Wave (VLW) spectral range. For many years, p-on-n arsenicion implanted planar technology has been developed and improved within the framework of the joint laboratory DEFIR, a collaborative effort bringing together the expertise of both teams. Compared to n-on-p architecture, p-on-n technology allows to lower dark current density and series resistance by means of respectively long-lifetime minority carriers (hole) and high-mobility majority carriers (electrons). As a consequence, p-on-n photodiodes are well-adapted for very large FPAs operating either at high temperature or very low flux. The Mid-Wave (MW) and Long-Wave (LW) spectral ranges have been firstly addressed with TV/4 FPAs, 30 μm pitch, principally for defence and security applications. Our results showed state-of-the-art detector performances, consistent with “Rule 07” model, a relevant indicator of the p-on-n technology maturity. The subsequent developments of p-on-n imagers have produced more compact, less energy consuming systems, with a substantial resolution enhancement. In this way, MW and LW FPAs, TV format, with 15 μm pixel pitch have been designed. First results obtained in MW (λc=5.3 μm @80 K) for High Operating Temperature (HOT) applications have showed highly promising Electro-Optical (EO) performances. Space applications are another exciting but challenging domains where p-on-n is a good candidate. In this way, imagers dedicated to low-flux detection have first been realized as TV/4 FPAs, with 15μm pitch in the SW spectral range (2 μm). The dark currents obtained are coherent with those published in the literature. Finally, TV/4 arrays, 30 μm pixel pitch, have been manufactured for the very long wave spectral range. For this detection range, the quality of material and reliability of technology are the most critical. The measured dark current fits “Rule 07” well, with homogeneous imagers. In conclusion, DEFIR team have developed, improved and characterized p-on-n IR FPAs from SW to VLW spectral range. In all spectral ranges, we have demonstrated state-of-the-art results, which highlight the quality of material and viability of our p-on-n technology. This technology, currently industrialized by SOFRADIR, opens new ways for next generation of imagers.

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Proceedings Article | 19 November 2012

Evaluation of very long wave p-on-n MCT FPAs for space applications

N. Baier, L. Mollard, O. Gravrand, G. Bourgeois, J.-P. Zanatta, G. Destefanis

Proc. SPIE. 8533, Sensors, Systems, and Next-Generation Satellites XVI

KEYWORDS: Staring arrays, Readout integrated circuits, Liquid phase epitaxy, Sensors, Manufacturing, Doping, Photodiodes, Capacitance, Arsenic, Temperature metrology

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Proceedings Article | 8 November 2012

High-performance MCT and QWIP IR detectors at Sofradir

Yann Reibel, Laurent Rubaldo, Alain Manissadjian, David Billon-Lanfrey, Johan Rothman, Eric de Borniol, Gérard Destéfanis, E. Costard

Proc. SPIE. 8541, Electro-Optical and Infrared Systems: Technology and Applications IX

KEYWORDS: Staring arrays, Readout integrated circuits, Infrared detectors, Mid-IR, Avalanche photodetectors, Sensors, Infrared technology, Medium wave, Quantum well infrared photodetectors, Standards development

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Proceedings Article | 24 October 2012

Latest developments of MCT focal plane arrays in France

M. Vuillermet, D. Billon-Lanfrey, Y. Reibel, A. Manissadjian, L. Mollard, N. Baier, O. Gravrand, D. Brellier, G. Destéfanis

Proc. SPIE. 8541, Electro-Optical and Infrared Systems: Technology and Applications IX

KEYWORDS: Staring arrays, Infrared detectors, Avalanche photodetectors, Sensors, Manufacturing, Photodiodes, Diodes, Epitaxy, Infrared technology, Temperature metrology

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Proceedings Article | 13 September 2012

Advances in detector technologies for visible and infrared wavefront sensing

Philippe Feautrier, Jean-Luc Gach, Mark Downing, Paul Jorden, Johann Kolb, Johan Rothman, Thierry Fusco, Philippe Balard, Eric Stadler, Christian Guillaume, David Boutolleau, Gérard Destefanis, Nicolas Lhermet, Olivier Pacaud, Michel Vuillermet, Alexandre Kerlain, Norbert Hubin, Javier Reyes, Markus Kasper, Olaf Ivert, Wolfgang Suske, Andrew Walker, Michael Skegg, Sophie Derelle, Joel Deschamps, Clélia Robert, Nicolas Vedrenne, Frédéric Chazalet, Julien Tanchon, Thierry Trollier, Alain Ravex, Gérard Zins, Pierre Kern, Thibaut Moulin, Olivier Preis

Proc. SPIE. 8447, Adaptive Optics Systems III

KEYWORDS: CMOS sensors, Avalanche photodetectors, Imaging systems, Cameras, Sensors, Quantum efficiency, Wavefront sensors, Adaptive optics, Infrared radiation, Charge-coupled devices

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The purpose of this paper is to give an overview of the state of the art wavefront sensor detectors developments held in Europe for the last decade. The success of the next generation of instruments for 8 to 40-m class telescopes will depend on the ability of Adaptive Optics (AO) systems to provide excellent image quality and stability. This will be achieved by increasing the sampling, wavelength range and correction quality of the wave front error in both spatial and time domains. The modern generation of AO wavefront sensor detectors development started in the late nineties with the CCD50 detector fabricated by e2v technologies under ESO contract for the ESO NACO AO system. With a 128x128 pixels format, this 8 outputs CCD offered a 500 Hz frame rate with a readout noise of 7e-. A major breakthrough has been achieved with the recent development by e2v technologies of the CCD220. This 240x240 pixels 8 outputs EMCCD (CCD with internal multiplication) has been jointly funded by ESO and Europe under the FP6 programme. The CCD220 and the OCAM2 camera that operates the detector are now the most sensitive system in the world for advanced adaptive optics systems, offering less than 0.2 e readout noise at a frame rate of 1500 Hz with negligible dark current. Extremely easy to operate, OCAM2 only needs a 24 V power supply and a modest water cooling circuit. This system, commercialized by First Light Imaging, is extensively described in this paper. An upgrade of OCAM2 is foreseen to boost its frame rate to 2 kHz, opening the window of XAO wavefront sensing for the ELT using 4 synchronized cameras and pyramid wavefront sensing. Since this major success, new developments started in Europe. One is fully dedicated to Natural and Laser Guide Star AO for the E-ELT with ESO involvement. The spot elongation from a LGS Shack Hartman wavefront sensor necessitates an increase of the pixel format. Two detectors are currently developed by e2v. The NGSD will be a 880x840 pixels CMOS detector with a readout noise of 3 e (goal 1e) at 700 Hz frame rate. The LGSD is a scaling of the NGSD with 1760x1680 pixels and 3 e readout noise (goal 1e) at 700 Hz (goal 1000 Hz) frame rate. New technologies will be developed for that purpose: advanced CMOS pixel architecture, CMOS back thinned and back illuminated device for very high QE, full digital outputs with signal digital conversion on chip. In addition, the CMOS technology is extremely robust in a telescope environment. Both detectors will be used on the European ELT but also interest potentially all giant telescopes under development. Additional developments also started for wavefront sensing in the infrared based on a new technological breakthrough using ultra low noise Avalanche Photodiode (APD) arrays within the RAPID project. Developed by the SOFRADIR and CEA/LETI manufacturers, the latter will offer a 320x240 8 outputs 30 microns IR array, sensitive from 0.4 to 3.2 microns, with 2 e readout noise at 1500 Hz frame rate. The high QE response is almost flat over this wavelength range. Advanced packaging with miniature cryostat using liquid nitrogen free pulse tube cryocoolers is currently developed for this programme in order to allow use on this detector in any type of environment. First results of this project are detailed here. These programs are held with several partners, among them are the French astronomical laboratories (LAM, OHP, IPAG), the detector manufacturers (e2v technologies, Sofradir, CEA/LETI) and other partners (ESO, ONERA, IAC, GTC). Funding is: Opticon FP6 and FP7 from European Commission, ESO, CNRS and Université de Provence, Sofradir, ONERA, CEA/LETI and the French FUI (DGCIS).

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Proceedings Article | 31 May 2012

Very long wavelength infrared detection with p-on-n LPE HgCdTe

N. Baier, L. Mollard, O. Gravrand, G. Bourgeois, J.-P. Zanatta, G. Destefanis, P. Pidancier, P. Chorier, L. Tauziède, A. Bardoux

Proc. SPIE. 8353, Infrared Technology and Applications XXXVIII

KEYWORDS: Long wavelength infrared, Liquid phase epitaxy, Sensors, Mercury, Manufacturing, Resistance, Doping, Photodiodes, Arsenic, Temperature metrology

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Proceedings Article | 31 May 2012

Status of MCT focal plane arrays in France

M. Vuillermet, D. Billon-Lanfrey, Y. Reibel, A. Manissadjian, L. Mollard, N. Baier, O. Gravrand, G. Destéfanis

Proc. SPIE. 8353, Infrared Technology and Applications XXXVIII

KEYWORDS: Staring arrays, Infrared detectors, Avalanche photodetectors, Liquid phase epitaxy, Sensors, Manufacturing, Photodiodes, Diodes, Epitaxy, Temperature metrology

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Proceedings Article | 31 May 2012

Small pixel pitch solutions for active and passive imaging

Yann Reibel, Alexandre Kerlain, Gwladys Bonnouvier, David Billon-Lanfrey, Johan Rothman, Laurent Mollard, Eric de Borniol, Gérard Destefanis

Proc. SPIE. 8353, Infrared Technology and Applications XXXVIII

KEYWORDS: Staring arrays, Readout integrated circuits, Thermography, Signal to noise ratio, Avalanche photodetectors, Imaging systems, Sensors, Quantum efficiency, Interference (communication), Signal detection

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Proceedings Article | 31 May 2012

LWIR and VLWIR MCT technologies and detectors development at SOFRADIR for space applications

Proc. SPIE. 8353, Infrared Technology and Applications XXXVIII

KEYWORDS: Readout integrated circuits, Infrared detectors, Long wavelength infrared, Signal to noise ratio, Imaging systems, Sensors, Manufacturing, Space operations, Environmental sensing, Standards development

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Proceedings Article | 31 May 2012

Ultralow dark current CdHgTe FPAs in the SWIR range at CEA and Sofradir

O. Gravrand, L. Mollard, O. Boulade, V. Moreau, E. Sanson, G. Destefanis

Proc. SPIE. 8353, Infrared Technology and Applications XXXVIII

KEYWORDS: Staring arrays, Readout integrated circuits, Short wave infrared radiation, Liquid phase epitaxy, Sensors, Diffusion, Photodiodes, Capacitance, Diodes, Temperature metrology

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SPIE Journal Paper | 22 May 2012

Active three-dimensional and thermal imaging with a 30-μm pitch 320×256 HgCdTe avalanche photodiode focal plane array

Eric De Borniol, Johan Rothman, Fabrice Guellec, Gautier Vojetta, Gérard Destéfanis, Olivier Pacaud

OE Vol. 51 Issue 6

KEYWORDS: Staring arrays, 3D image processing, Pulsed laser operation, Avalanche photodetectors, Mercury cadmium telluride, Thermography, Readout integrated circuits, Avalanche photodiodes, LIDAR, Sensors

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Proceedings Article | 3 October 2011

Ultra low dark current CdHgTe FPAs in the SWIR range at CEA and Sofradir

O. Gravrand, L. Mollard, O. Boulade, V. Moreau, E. Sanson, G. Destéfanis

Proc. SPIE. 8176, Sensors, Systems, and Next-Generation Satellites XV

KEYWORDS: Staring arrays, Readout integrated circuits, Short wave infrared radiation, Liquid phase epitaxy, Sensors, Diffusion, Photodiodes, Capacitance, Diodes, Temperature metrology

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Proceedings Article | 28 September 2011

Latest developments in advanced MCT infrared cooled detectors

Yann Reibel, Laurent Rubaldo, Gwladys Bonnouvrier, Sebastien Verdet, David Billon-Lanfrey, Gerard Destéfanis, Laurent Mollard, Jacques Baylet, Johan Rothman, Guillaume Druart, Nicolas Guerineau

Proc. SPIE. 8185, Electro-Optical and Infrared Systems: Technology and Applications VIII

KEYWORDS: Staring arrays, Infrared detectors, Infrared sensors, Infrared imaging, Mid-IR, Avalanche photodetectors, Sensors, Integrated optics, Medium wave, Standards development

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Proceedings Article | 21 May 2011

Infrared dual-band detectors for next generation

Yann Reibel, Fabien Chabuel, Cedric Vaz, David Billon-Lanfrey, Jacques Baylet, Olivier Gravrand, Philippe Ballet, Gérard Destefanis

Proc. SPIE. 8012, Infrared Technology and Applications XXXVII

KEYWORDS: Target detection, Staring arrays, Infrared detectors, Infrared sensors, Mid-IR, Surface plasmons, Sensors, Diodes, Missiles, Standards development

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Proceedings Article | 21 May 2011

MCT IR detectors in France

Gérard Destéfanis, Philippe Tribolet, Michel Vuillermet, David Billon Lanfrey

Proc. SPIE. 8012, Infrared Technology and Applications XXXVII

KEYWORDS: Staring arrays, Infrared detectors, Long wavelength infrared, Mid-IR, Avalanche photodetectors, Liquid phase epitaxy, Sensors, Integrated optics, Medium wave, Arsenic

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Proceedings Article | 21 May 2011

A 320x256 HgCdTe avalanche photodiode focal plane array for passive and active 2D and 3D imaging

Eric De Borniol, Pierre Castelein, Fabrice Guellec, Johan Rothman, Gautier Vojetta, Gérard Destéfanis, Michel Vuillermet

Proc. SPIE. 8012, Infrared Technology and Applications XXXVII

KEYWORDS: Staring arrays, Readout integrated circuits, Avalanche photodetectors, Mercury cadmium telluride, Stereoscopy, Detector arrays, Avalanche photodiodes, Pulsed laser operation, 3D image processing, Ranging

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Proceedings Article | 28 October 2010

MCT (HgCdTe) IR detectors: latest developments in France

Yann Reibel, Laurent Rubaldo, Cedric Vaz, Philippe Tribolet, Nicolas Baier, Gérard Destefanis

Proc. SPIE. 7834, Electro-Optical and Infrared Systems: Technology and Applications VII

KEYWORDS: Staring arrays, Readout integrated circuits, Infrared detectors, Infrared sensors, Infrared imaging, Avalanche photodetectors, Mercury cadmium telluride, Sensors, Detector development, Diodes

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Proceedings Article | 28 October 2010

Experimental characterization of an infrared focal plane array for flash laser radar imaging

Eric de Borniol, Fabrice Guellec, Johan Rothman, André Perez, Nicolas Baier, Pierre Castelein, Gérard Destéfanis, Frédéric Pistone

Proc. SPIE. 7834, Electro-Optical and Infrared Systems: Technology and Applications VII

KEYWORDS: Staring arrays, Readout integrated circuits, Signal to noise ratio, Avalanche photodetectors, Mercury cadmium telluride, LIDAR, 3D metrology, Pulsed laser operation, 3D image processing, Ranging

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Proceedings Article | 4 May 2010

HgCdTe-based APD focal plane array for 2D and 3D active imaging: first results on a 320 x 256 with 30 µm pitch demonstrator

Eric de Borniol, Fabrice Guellec, Johan Rothman, André Perez, Jean-Paul Zanatta, Michael Tchagaspanian, Pierre Castelein, Gérard Destéfanis, Jean-Christophe Peyrard, Frédéric Pistone

Proc. SPIE. 7660, Infrared Technology and Applications XXXVI

KEYWORDS: Staring arrays, Readout integrated circuits, Nonuniformity corrections, Capacitors, LIDAR, Photons, 3D metrology, Pulsed laser operation, 3D image processing, Ranging

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Proceedings Article | 7 May 2009

Fifty years of successful MCT research and production in France

Philippe Bensussan, Philippe Tribolet, Gérard Destéfanis, Michel Sirieix

Proc. SPIE. 7298, Infrared Technology and Applications XXXV

KEYWORDS: Staring arrays, Infrared detectors, Long wavelength infrared, Thermography, Infrared sensors, Avalanche photodetectors, Liquid phase epitaxy, Mercury cadmium telluride, Sensors, Crystals

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Proceedings Article | 7 May 2009

HgCdTe APD-focal plane array performance at DEFIR

Johan Rothman, Eric De Borniol, Philippe Ballet, Laurent Mollard, Sylvain Gout, M. Fournier, Jean-Paul Chamonal, Gérard Destéfanis, Frederic Pistone, Solène Courtas, Xavier Lefoule, Philip Tribolet

Proc. SPIE. 7298, Infrared Technology and Applications XXXV

KEYWORDS: Staring arrays, Readout integrated circuits, Avalanche photodetectors, Mercury cadmium telluride, Cadmium, Dispersion, Photons, Diffusion, Doping, Medium wave

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Proceedings Article | 7 May 2009

Status of p-on-n HgCdTe technologies at DEFIR

N. Baier, L. Mollard, J. Rothman, G. Destéfanis, P. Ballet, G. Bourgeois, J. Zanatta, M. Tchagaspanian, S. Courtas, P. Fougères, C. Pautet, P. Pidancier, L. Rubaldo

Proc. SPIE. 7298, Infrared Technology and Applications XXXV

KEYWORDS: Staring arrays, Long wavelength infrared, Mid-IR, Sensors, Dispersion, Indium, Doping, Photodiodes, Arsenic, Temperature metrology

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Proceedings Article | 15 May 2008

HgCdTe FPAs made by arsenic-ion implantation

L. Mollard, G. Destefanis, J. Rothman, N. Baier, S. Bisotto, P. Ballet, J. Chamonal, P. Castelein, J. Zanatta, M. Tchagaspanian, A. Papon, J. Barnes, F. Henry, S. Gout, G. Bourgeois, C. Pautet, P. Fougères

Proc. SPIE. 6940, Infrared Technology and Applications XXXIV

KEYWORDS: Long wavelength infrared, Mid-IR, Mercury cadmium telluride, Annealing, Indium, Diffusion, Mercury, Doping, Photodiodes, Arsenic

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Proceedings Article | 5 May 2008

HgCdTe APD- focal plane array development at CEA Leti-Minatec

Johan Rothman, Gwladys Perrais, Eric De Borniol, Pierre Castelein, Nicholas Baier, Fabrice Guellec, Michael Tchagaspanian, Philippe Ballet, Laurent Mollard, Sylvain Gout, André Perez, Maryse Fournier, Jean-Paul Chamonal, Philippe Tribolet, Gerard Destefanis

Proc. SPIE. 6940, Infrared Technology and Applications XXXIV

KEYWORDS: Staring arrays, Readout integrated circuits, Avalanche photodetectors, Liquid phase epitaxy, Mercury cadmium telluride, Stereoscopy, Diffusion, 3D metrology, Medium wave, 3D image processing

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We report the latest developments of MW HgCdTe electron initiated avalanche photo-diodes (e-APDs) focal plane arrays (FPAs) at CEA-LETI. The MW e-APD FPAs are developed in view of ultra-sensitive high dynamic range passive starring arrays, active 2D/3D and dual-mode passive-active imaging, which is why both the passive imaging performance and the gain characteristics of the APDs are of interest. A passive mode responsivity operability of 99.9% was measured in LPE and MBE e-APDs FPAs associated with an average <i>NETD</i>=12mK, demonstrating that dual mode passive-active imaging can be achieved with LETI e-APDs without degradation in the passive imaging performance. The gain and sensitivity performances were measured in test arrays and using a low voltage technology (3.3V) CTIA test pixel designed for 3D active imaging. The CTIA and test arrays measurements yielded comparable results in terms of bias gain dependence (<i>M</i>=100 at <i>V<sub>b</sub></i>=-7V), low excess noise factor (<i><F></i>=1.2) and low equivalent input current (<i>I</i><sub>eq_in</sub><1pA). These results validated the low voltage CTIA approach for integrating the current from a HgCdTe e-APD under high bias. The test array measurements demonstrated a relative dispersion below 2% in both MBE and LPE e- APDs for gains higher than <i>M</i>>100, associated with an operability of 99%. The operability at <i>I</i><sub>eq_in</sub><1pA at <i>M</i>=30 was 95%. A record low value of Ieq_in=1fA was estimated in the MBE e-APDs at <i>M</i>=100, indicating the potential for using the MW e-APDs for very low flux applications. The high potential of the MW e-APDS for active imaging was demonstrated by impulse response measurements which yielded a typical rise time lower than 100ps and diffusion limited fall time of 900ps to 5ns, depending on the pixel pitch. This potential was confirmed by the demonstration of a 2ns time of flight (TOF) resolution in the CTIA e-APD 3D pixel. The combined photon and dark current induced equivalent back ground noise at <i>f/</i>8 with a cold band pass filter at λ=1.55μm was 2 electrons rms for an integration time of 50ns.

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Proceedings Article | 18 April 2008

Advanced HgCdTe technologies and dual-band developments

Philippe Tribolet, Gérard Destefanis, Philippe Ballet, Jacques Baylet, Olivier Gravrand, Johan Rothman

Proc. SPIE. 6940, Infrared Technology and Applications XXXIV

KEYWORDS: Staring arrays, Infrared detectors, Signal to noise ratio, Infrared imaging, Avalanche photodetectors, Liquid phase epitaxy, Mercury cadmium telluride, Sensors, Diodes, Medium wave

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Proceedings Article | 24 January 2008

New architecture for TECless operation of uncooled microbolometers developed at LETI

F. Simoens, M. Tchagaspanian, A. Arnaud, P. Imperinetti, G. Chammings, J. Yon, J. Tissot, Gérard Destefanis

Proc. SPIE. 6835, Infrared Materials, Devices, and Applications

KEYWORDS: Microbolometers, Thermography, Mirrors, Imaging systems, Sensors, Fourier transforms, Infrared materials, Prototyping

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Proceedings Article | 14 May 2007

High performance characteristics in pin MW HgCdTe e-APDs

J. Rothman, G. Perrais, G. Destefanis, J. Baylet, P. Castelein, J.-P. Chamonal

Proc. SPIE. 6542, Infrared Technology and Applications XXXIII

KEYWORDS: Signal to noise ratio, Photon counting, Avalanche photodetectors, Mercury cadmium telluride, Sensors, Diffusion, Interference (communication), Diodes, Medium wave, Absorption

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Proceedings Article | 14 May 2007

Advanced MCT technologies in France

Gérard Destefanis, Philippe Tribolet

Proc. SPIE. 6542, Infrared Technology and Applications XXXIII

KEYWORDS: Staring arrays, Infrared detectors, Long wavelength infrared, Mid-IR, Mercury cadmium telluride, Sensors, Quantum efficiency, Photodiodes, Diodes, Infrared radiation

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In this paper we present an overview of the very recent developments of the HgCdTe infrared detector technology developed by CEA-LETI and industrialized by Sofradir in France. Today Sofradir uses in production for more than 15years a very mature, reproducible, well mastered and fully understood, planar n on p ion implanted technology. This process that allows very high yields to be achieved in all infrared bands from SWIR to LWIR uses the very conventional approach of LPE growth of MCT on lattice-matched CdZnTe substrates. Progress in this field is continuous from 20years and has recently leaded to the fabrication of high performance VLWIR FPA (320x256 with cut off wavelengths as high as 20μm). Moreover, thanks to the design of the epitaxial structure and to the substrate removal step MCT FPAs present the unique features to have very high quantum efficiency (above 70%) from the cut off wavelength down to the UV. This effect, which opens new application fields, was recently demonstrated in SWIR 320x256 FPAs with cut off wavelength of 2.5μm. Very high quality FPAs (1280x1024) with pitches as small as 15μm have already been demonstrated last year using the MBE growth of MWIR MCT epilayers on 4 inches germanium substrates, n on p ion implanted photodiodes and the hot welding indium bump hybridization technique. At the same time, with the MBE growth, bicolor and dual band FPAs which uses more complex multi hetero-junctions architectures (both 4 layers npn and 'pseudo planar' structures and extrinsically doped MCT layers) were fabricated with formats of 320x256 and pitches as small as 25μm. A very new area of development concerns avalanche photodiodes (APD) made with MCT. This semiconductor presents a unique feature among all the over semiconductors. Extremely high avalanche gains can be obtained on n on p photodiodes without absolutely any noise excess (F(K)=1): MCT APDs act as perfect amplifiers. These results open new interesting fields of investigation for low flux applications and fast detectors (including hyper spectral imaging and active imaging).

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Proceedings Article | 26 April 2007

HgCdTe large staring arrays at SOFRADIR

Philippe Tribolet, Gérard Destefanis

Proc. SPIE. 6636, 19th International Conference on Photoelectronics and Night Vision Devices

KEYWORDS: Staring arrays, Infrared detectors, Mid-IR, Mercury cadmium telluride, Sensors, Germanium, Modulation transfer functions, Medium wave, Jupiter, Semiconducting wafers

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Proceedings Article | 5 October 2006

Latest developments on MCT staring arrays

Laurent Vial, Agnes Combette, David Gohier, Frédéric Pistone, Philippe Tribolet, Michel Vuillermet, Gérard Destefanis

Proc. SPIE. 6395, Electro-Optical and Infrared Systems: Technology and Applications III

KEYWORDS: Staring arrays, Infrared detectors, Nonuniformity corrections, Optical transfer functions, Mercury cadmium telluride, Sensors, Germanium, Modulation transfer functions, Jupiter, Semiconducting wafers

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Proceedings Article | 5 October 2006

Demonstration of multifunctional bi-colour-avalanche gain detection in HgCdTe FPA

G. Perrais, J. Rothman, G. Destefanis, J. Baylet, P. Castelein, J.-P. Chamonal, P. Tribolet

Proc. SPIE. 6395, Electro-Optical and Infrared Systems: Technology and Applications III

KEYWORDS: Staring arrays, Readout integrated circuits, Long wavelength infrared, Signal to noise ratio, Avalanche photodetectors, Mercury cadmium telluride, Sensors, Interference (communication), Diodes, Medium wave

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Proceedings Article | 3 October 2006

From LWIR to VLWIR FPAs made with HgCdTe at Defir

O. Gravrand, E. De Borniol, S. Bisotto, L. Mollard, G. Destefanis, P. Chorier

Proc. SPIE. 6361, Sensors, Systems, and Next-Generation Satellites X

KEYWORDS: Staring arrays, Long wavelength infrared, Liquid phase epitaxy, Mercury cadmium telluride, Sensors, Diffusion, Quantum efficiency, Doping, Photodiodes, Standards development

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Proceedings Article | 8 September 2006

Progress in MCT large staring array

Frédéric Pistone, Sébastien Verdet, Philippe Tribolet, Gérard Destefanis

Proc. SPIE. 6295, Infrared Detectors and Focal Plane Arrays VIII

KEYWORDS: Staring arrays, Infrared detectors, Signal to noise ratio, Optical transfer functions, Mercury cadmium telluride, Sensors, Diodes, Modulation transfer functions, Analog electronics, Semiconducting wafers

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Proceedings Article | 18 May 2006

MWIR focal plane arrays made with HgCdTe grown by MBE on germanium substrates

Philippe Tribolet, Sophie Blondel, Patricia Costa, Agnès Combette, Laurent Vial, Philippe Ballet, Jean Paul Zanatta, Olivier Gravrand, Christophe Largeron, Jean Paul Chamonal, Alain Million

Proc. SPIE. 6206, Infrared Technology and Applications XXXII

KEYWORDS: Staring arrays, Mid-IR, Liquid phase epitaxy, Mercury cadmium telluride, Germanium, Silicon, Modulation transfer functions, Medium wave, Jupiter, Semiconducting wafers

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Proceedings Article | 17 May 2006

Bi-color and dual-band HgCdTe infrared focal plane arrays at DEFIR

G. Destefanis, P. Ballet, J. Baylet, P. Castelein, O. Gravrand, J. Rothman, F. Rothan, G. Perrais, J.P. Chamonal, A. Million, P. Tribolet, B. Terrier, E. Sanson, P. Costa, L. Vial

Proc. SPIE. 6206, Infrared Technology and Applications XXXII

KEYWORDS: Staring arrays, Long wavelength infrared, Mid-IR, Mercury cadmium telluride, Sensors, Etching, Indium, Photodiodes, Diodes, Infrared radiation

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Proceedings Article | 17 May 2006

From visible to infrared: a new detector approach

Philippe Chorier, Philippe Tribolet, Gérard Destéfanis

Proc. SPIE. 6206, Infrared Technology and Applications XXXII

KEYWORDS: Infrared detectors, Infrared sensors, Short wave infrared radiation, Antireflective coatings, Visible radiation, Sensors, Quantum efficiency, Coating, Infrared radiation, Modulation transfer functions

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Sofradir infrared detectors manufacturing is based on the use of a Mercury Cadmium Telluride (MCT) technology hybridized with silicon readout circuit covering a bandwidth from 0.8 to 14 μm thanks to the ability of MCT material to be tuned in terms of cut-off wavelength. Most of the time, infrared detectors are used to answer applications operating between 0.8 μm and 15 μm. New emerging applications express a need for detectors covering a larger waveband and in particular detectors with waveband sensitivity from the visible spectrum up to infrared spectrum. Some of these applications are for example hyperspectral applications where a panchromatic channel is generally associated to an infrared channel. For these applications, the availability of a detector covering these two channels can greatly simplify the instrument architecture. Other potential applications can be spectroscopic applications in visible range needing an extension of the sensitivity of the sensor in near infrared spectrum which cannot be answered with high performances by classical silicon sensors because of the loss of sensitivity between 0.8 μm and 1 μm. Physically, MCT material is able to operate in the visible range and has a potential to offer a high quantum efficiency and large field factor thanks to the hybrid structure. In addition, Sofradir N on P ion implantation process as well as Sofradir hybridization process offer specific advantages to develop high performances detectors sensitive both in visible and infrared spectra. This kind of detector can be an interesting alternative to answer applications needing a large waveband detector. In this paper, Sofradir approach to develop a new kind of detectors sensitive from visible to infrared spectra is presented. Potential applications and the interest of these new Sofradir detectors are discussed versus these needs. Finally, the last results and performances of these detectors are presented.

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Proceedings Article | 21 October 2005

Characterization of high performances of long wave and very long wave HgCdTe staring arrays

Eric De Borniol, Gérard Destefanis, Alain Manissadjian, Philippe Tribolet

Proc. SPIE. 5978, Sensors, Systems, and Next-Generation Satellites IX

KEYWORDS: Staring arrays, Readout integrated circuits, Infrared detectors, Photovoltaics, Liquid phase epitaxy, Mercury cadmium telluride, Cameras, Sensors, Spectroscopy, Standards development

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Proceedings Article | 15 October 2005

High-resolution FPAs on MBE-grown HgCdTe/CdTe/Ge

G. Badano, P. Ballet, J. P. Zanatta, A. Millon, C. Largeron, J. Baylet, J. Rothman, O. Gravrand, P. Castelein, J. P. Chamonal, G. Destefanis, S. Mibord, P. Costa

Proc. SPIE. 5964, Detectors and Associated Signal Processing II

KEYWORDS: Staring arrays, Oxides, Mercury cadmium telluride, Sensors, Germanium, Dielectrics, Surface roughness, Semiconducting wafers, Tellurium, Molecular beam epitaxy

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Proceedings Article | 15 October 2005

The third generation cooled IR detector approach in France

Philippe Tribolet, Michel Vuillermet, Gérard Destefanis

Proc. SPIE. 5964, Detectors and Associated Signal Processing II

KEYWORDS: Staring arrays, Infrared detectors, Mid-IR, Short wave infrared radiation, Mercury cadmium telluride, Cadmium, Sensors, Mercury, Semiconducting wafers, Tellurium

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Proceedings Article | 14 October 2005

Restitution of the technological parameters of a 320×240 MCT LWIR focal plane array by spectrometric measurements

Sylvain Rommeluère, Nicolas Guérineau, Joël Deschamps, Eric De Borniol, Alain Million, Jean-Paul Chamonal, Gérard Destefanis

Proc. SPIE. 5964, Detectors and Associated Signal Processing II

KEYWORDS: Staring arrays, Infrared detectors, Long wavelength infrared, Refractive index, Mercury cadmium telluride, Modulation, Sensors, Spectroscopy, Quantum efficiency, Cartography

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Proceedings Article | 29 September 2005

Demonstration of a 25um pitch TV/4 dual-band HgCdTe infrared focal plane array with spatial coherence

P. Ballet, P. Castelein, J. Baylet, E. Laffosse, M. Fendler, F. Pottier, S. Gout, C. Vergnaud, S. Ballerand, O. Gravrand, J. C. Deplanche, S. Martin, J. P. Zanatta, J. P. Chamonal, A. Million, G. Destefanis

Proc. SPIE. 5957, Infrared Photoelectronics

KEYWORDS: Staring arrays, Mid-IR, Short wave infrared radiation, Mercury cadmium telluride, Cadmium, Sensors, Mercury, Diodes, Niobium, Electro optics

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Proceedings Article | 31 May 2005

Third generation and multicolor IRFPA developments: a unique approach based on DEFIR

Philippe Tribolet, Gerard Destefanis

Proc. SPIE. 5783, Infrared Technology and Applications XXXI

KEYWORDS: Staring arrays, Readout integrated circuits, Infrared detectors, Mercury cadmium telluride, Cadmium, Sensors, Silicon, Mercury, Semiconducting wafers, Tellurium

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Proceedings Article | 31 May 2005

Long wave HgCdTe staring arrays at Sofradir: from 9 µm to 13+ µm cut-offs for high performance applications

Alain Manissadjian, Philippe Tribolet, Geeard Destefanis, Eric De Borniol

Proc. SPIE. 5783, Infrared Technology and Applications XXXI

KEYWORDS: Staring arrays, Infrared cameras, Infrared sensors, Photovoltaics, Optical filters, Liquid phase epitaxy, Mercury cadmium telluride, Cameras, Sensors, Forward looking infrared

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Today, end users require Long Wave (LW) staring arrays to develop new compact IR cameras, and Very Long Wave (VLW) staring arrays to develop high performance applications with broadband detection up to more than 13μm. HgCdTe is the only available material to answer these needs with the same production line. Based on its HgCdTe Liquid Phase Epitaxy (LPE) process that has proven its maturity and reproducibility over the last thirteen years, with for example more than 14,000 288×4 IRFPAs already delivered worldwide, SOFRADIR has been offering for several years 320×256 LW detectors with a cut-off wavelength tuned between 9μm and 12μm depending on the required application. Based on that experience, two new LW HgCdTe products have been developed and are offered since beginning of 2005. For compact LW FLIRs, SOFRADIR offers the VENUS-LW: a higher resolution 25μm pitch 384×288 IDDCA with 0.5W micro cooler, with a cut-off between 9μm and 10μm for a spectral band pass fully satisfying the imagery requirements and for an operational temperature between 77K and 85K (thus enabling the use of a compact low power micro cooler). The manufacturing of this detector relies on the standard HgCdTe production process with the latest uniformity improvements. Following a similar approach and for VLW applications such as spectroscopy or broadband low flux applications, an improved HgCdTe material with optimized LPE and PhotoVoltaic (PV) detector processes, has been developed by SOFRADIR and LETI LIR for cut-off wavelengths above 12μm below 60K, enabling to have very low dark currents compatible with very low flux applications. These high performance low dark current detectors are offered with a standard 30μm pitch 320×256 readout circuit, integrated with a 1 Watt split Stirling cycle cooler enabling to reach the 50K range with very short cool down times. The performances of these new LW and VLW IR detectors are presented in this paper as well as the development trends for LW detectors at SOFRADIR.

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Proceedings Article | 6 December 2004

IRFPA modeling: examples and applications in SWIR and LWIR

Alain Durand, Eric de Borniol, Regis Vinciguerra, Thierry Cathala, Jean Jacques Yon, Pierre Castelein, Robert Tronel, Gerard Destefanis

Proc. SPIE. 5612, Electro-Optical and Infrared Systems: Technology and Applications

KEYWORDS: Bolometers, Long wavelength infrared, Infrared sensors, Infrared imaging, Short wave infrared radiation, Cameras, Sensors, Infrared radiation, Thermal modeling, Electro optical modeling

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Proceedings Article | 4 November 2004

Recent development in infrared technologies at LETI for Earth observation

Jean Jacques Yon, Gerard Destefanis, Eric Mottin

Proc. SPIE. 5570, Sensors, Systems, and Next-Generation Satellites VIII

KEYWORDS: Staring arrays, Amorphous silicon, Readout integrated circuits, Microbolometers, Infrared sensors, Mid-IR, Mercury cadmium telluride, Sensors, Diodes, Absorption

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Proceedings Article | 30 August 2004

Microspectrometer on a chip (MICROSPOC): first demonstration on a 320x240 LWIR HgCdTe focal plane array

Sylvain Rommeluere, Nicolas Guerineau, Joel Deschamps, Eric De Borniol, Alain Million, Jean-Paul Chamonal, Gerard Destefanis

Proc. SPIE. 5406, Infrared Technology and Applications XXX

KEYWORDS: Staring arrays, Long wavelength infrared, Refractive index, Mercury cadmium telluride, Modulation, Interferometers, Spectroscopy, Quantum efficiency, Cartography, Prototyping

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Proceedings Article | 5 August 2004

Infrared focal plane array modeling for aerospace and automotive applications

Alain Durand, Eric de Borniol, Nicolas Guerineau, Thierry Cathala, Jean-Jacques Yon, Jean-Louis Ouvrier-Buffet, Pierre Castelein, Robert Tronel, Sylvette Bisotto, Gerard Destefanis, Jean-Paul Chamonal

Proc. SPIE. 5407, Infrared Imaging Systems: Design, Analysis, Modeling, and Testing XV

KEYWORDS: Staring arrays, Bolometers, Long wavelength infrared, Infrared imaging, Short wave infrared radiation, Cameras, Sensors, Infrared radiation, Thermal modeling, Electro optical modeling

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Proceedings Article | 19 February 2004

Megapixel HgCdTe MWIR focal plane array with a 15-um pitch

Pierre Castelein, Francois Marion, Jean-Luc Martin, Jacques Baylet, Norbert Moussy, Olivier Gravrand, Alain Durand, Jean-Paul Chamonal, Gerard Destefanis

Proc. SPIE. 5251, Detectors and Associated Signal Processing

KEYWORDS: Staring arrays, Infrared sensors, Mid-IR, Mercury cadmium telluride, Sensors, Germanium, Indium, Diodes, Infrared radiation, Semiconducting wafers

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Proceedings Article | 10 October 2003

Megapixel HgCdTe MWIR focal plane array with a 15-um pitch

Pierre Castelein, Francois Marion, Jean-Luc Martin, Jacques Baylet, Norbert Moussy, Olivier Gravrand, Alain Durand, Jean-Paul Chamonal, Gerard Destefanis

Proc. SPIE. 5074, Infrared Technology and Applications XXIX

KEYWORDS: Staring arrays, Infrared sensors, Mid-IR, Mercury cadmium telluride, Sensors, Germanium, Indium, Diodes, Infrared radiation, Semiconducting wafers

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Proceedings Article | 23 January 2003

Dual-band infrared HgCdTe focal plane array

Eric de Borniol, J. Baylet, Jean-Paul Zanatta, Sophie Mibord, Olivier Gravrand, Frederic Rothan, Pierre Castelein, Jean-Paul Chamonal, Michel Ravetto, Gerard Destefanis

Proc. SPIE. 4820, Infrared Technology and Applications XXVIII

KEYWORDS: Staring arrays, Readout integrated circuits, Mid-IR, Mercury cadmium telluride, Sensors, Etching, Indium, Doping, Diodes, Infrared radiation

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Proceedings Article | 5 August 2002

New generation of long linear-butted HgCdTe arrays for high-resolution infrared imaging

Pierre Castelein, Philippe Rambaud, Jean-Paul Chamonal, Arnaud Laflaquiere, Andre Perez, Michel Ravetto, Gerard Destefanis, Marcel Caes

Proc. SPIE. 4721, Infrared Detectors and Focal Plane Arrays VII

KEYWORDS: Staring arrays, Long wavelength infrared, Signal to noise ratio, Infrared imaging, Mid-IR, Mercury cadmium telluride, Sensors, Signal processing, Electro optics, Prototyping

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Proceedings Article | 5 August 2002

Recent advances in the development of infrared multispectral 1282 FPAs

J. Baylet, Jean-Paul Zanatta, Damien Chance, Olivier Gravrand, Frederic Rothan, Eric De Borniol, Pierre Castelein, Jean-Paul Chamonal, Michel Ravetto, Gerard Destefanis

Proc. SPIE. 4721, Infrared Detectors and Focal Plane Arrays VII

KEYWORDS: Staring arrays, Mid-IR, Mercury cadmium telluride, Cadmium, Sensors, Etching, Indium, Diodes, Infrared radiation, Heterojunctions

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Proceedings Article | 21 May 2002

Recent development in infrared FPAs with multispectral 128exp2 IRCMOS

J. Baylet, Jean-Paul Zanatta, Damien Chance, Olivier Gravrand, Frederic Rothan, Eric De Borniol, Pierre Castelein, Jean-Paul Chamonal, Michel Ravetto, Gerard Destefanis

Proc. SPIE. 4650, Photodetector Materials and Devices VII

KEYWORDS: Staring arrays, Mid-IR, Mercury cadmium telluride, Cadmium, Sensors, Etching, Indium, Diodes, Infrared radiation, Heterojunctions

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Proceedings Article | 15 December 2000

Single- and two-color infrared focal plane arrays made by MBE in HgCdTe

Jean-Paul Zanatta, P. Ferret, R. Loyer, G. Petroz, S. Cremer, Jean-Paul Chamonal, Philippe Bouchut, Alain Million, Gerard Destefanis

Proc. SPIE. 4130, Infrared Technology and Applications XXVI

KEYWORDS: Long wavelength infrared, Mid-IR, Liquid phase epitaxy, Mercury cadmium telluride, Sensors, Crystals, Germanium, Scanning electron microscopy, Diodes, Infrared radiation

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Proceedings Article | 26 October 1998

HgCdTe performance for high operating temperatures

Alain Manissadjian, Patricia Costa, Philippe Tribolet, Gerard Destefanis

Proc. SPIE. 3436, Infrared Technology and Applications XXIV

KEYWORDS: Staring arrays, Infrared detectors, Long wavelength infrared, Infrared sensors, Mid-IR, Short wave infrared radiation, Mercury cadmium telluride, Sensors, Infrared radiation, Temperature metrology

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Proceedings Article | 11 August 1998

Long linear MWIR and LWIR HgCdTe infrared detection arrays for high-resolution imaging

Jean-Paul Chamonal, Patrick Audebert, Philippe Medina, Gerard Destefanis, Joel Deschamps, Michel Girard, Jean-Pierre Chatard

Proc. SPIE. 3553, Detectors, Focal Plane Arrays, and Imaging Devices II

KEYWORDS: Staring arrays, Long wavelength infrared, Mid-IR, CMOS sensors, Mercury cadmium telluride, Sensors, Silicon, Manufacturing, Detector arrays, Imaging arrays

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Proceedings Article | 13 August 1997

High-performance LWIR 256 x 256 HgCdTe focal plane array operating at 88 K

Gerard Destefanis, Patrick Audebert, Eric Mottin, Philippe Rambaud

Proc. SPIE. 3061, Infrared Technology and Applications XXIII

KEYWORDS: Staring arrays, Long wavelength infrared, Mercury cadmium telluride, Sensors, Diffusion, Diodes, Ion implantation, Astatine, Standards development

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Proceedings Article | 13 August 1997

Long-MWIR HgCdTe butted linear arrays

Jean-Paul Chamonal, Patrick Audebert, Gerard Destefanis, Philippe Medina, Michel Ravetto, Joel Deschamps, Michel Girard, Jean-Pierre Chatard

Proc. SPIE. 3061, Infrared Technology and Applications XXIII

KEYWORDS: Staring arrays, Infrared imaging, Mid-IR, CMOS sensors, Mercury cadmium telluride, Sensors, Silicon, Reliability, Detector arrays, Sensor performance

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Proceedings Article | 15 July 1994

Molecular beam epitaxy of HgCdTe for infrared focal plane arrays

Alain Million, P. Ferret, Jean-Paul Chamonal, Gerard Destefanis, Pierre Nicolas, Philippe Bouchut

Proc. SPIE. 2225, Infrared Detectors and Focal Plane Arrays III

KEYWORDS: Staring arrays, Infrared detectors, Mid-IR, Mercury cadmium telluride, Photodiodes, Infrared radiation, Epitaxy, Semiconducting wafers, Photovoltaic detectors, Molecular beam epitaxy

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Showing 5 of 69 publications

Conference Committee Involvement (7)

Electro-Optical and Infrared Systems: Technology and Applications

28 September 2016 | Edinburgh, United Kingdom

Electro-Optical and Infrared Systems: Technology and Applications

22 September 2015 | Toulouse, France

Electro-Optical and Infrared Systems: Technology and Applications

23 September 2014 | Amsterdam, Netherlands

Electro-Optical and Infrared Systems: Technology and Applications X

23 September 2013 | Dresden, Germany

Electro-Optical and Infrared Systems: Technology and Applications

25 September 2012 | Edinburgh, United Kingdom

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