Dr. Geunsu Lee Profile

Dr. Geunsu Lee

at SK Hynix Inc

SPIE Involvement:

Author

Publications (24)

Proceedings Article | 30 March 2007 Paper

Optimization of material and process parameter for minimizing defect in implementation of MFHM process

Kilyoung Lee, Junggun Heo, Keundo Ban, Hyungsuk Seo, Geunsu Lee, Wonkyu Kim, Junhee Cho, Junhyeub Sun, Sungkwon Lee, Cheolkyu Bok, Seungchan Moon, Jinwoong Kim

Proceedings Volume 6519, 65192Y (2007) https://doi.org/10.1117/12.712406

KEYWORDS: Etching, System on a chip, Silicon, Coating, Lithography, Materials processing, Carbon, Particles, Photoresist processing, Photomasks

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Proceedings Article | 11 April 2006 Paper

Development of multi-function hard mask to simplify process step

Kilyoung Lee, Samyoung Kim, Geunsu Lee, Sungkwon Lee, Junhee Cho, Wonkyu Kim, Cheolkyu Bok, Hyeongsoo Kim, Seungchan Moon, Jinwoong Kim

Proceedings Volume 6153, 61532V (2006) https://doi.org/10.1117/12.656870

KEYWORDS: Etching, System on a chip, Photoresist materials, Photomasks, Silicon, Lithography, Reflectivity, Photoresist processing, Chemistry, Carbon

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Proceedings Article | 11 April 2006 Paper

Polymer structure modifications for immersion leaching and watermark control

Jae Woo Lee, Seung Keun Oh, Jung Woo Kim, Sang Hyang Lee, Young Ho Jeong, Sang Soo Kim, Myoung Hwan Park, Deogbae Kim, Jaehyun Kim, Geunsu Lee, Seung-Chan Moon

Proceedings Volume 6153, 615321 (2006) https://doi.org/10.1117/12.655477

KEYWORDS: Polymers, Molecules, Digital watermarking, Photoresist processing, Liquids, Polymer thin films, Water, Optical lithography, Molecular interactions, Glasses

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Immersion materials have to overcome immersion-issues for successful wet process introduction to semiconductor mass production. Component-leaching issue is one of the most influential wet process huddles, which is related to immersion-liquid and projection lens contamination as well as resist patterning performances. In this paper, we will introduce our experimental results of leaching blocking effects resulted from the modification of polymer and additive structures and from the application of top surface blocking layers. PAG-leaching level of resist film formed of low Tg resin shows the highest meanwhile that of high Tg resin is the smallest leaching value. The interaction forces between additives and resin platforms are the most important to prevent additives leaching to immersion liquid. We have tested 3 different types of resin structures to modify the interaction forces between resin platform and resist components especially PAG molecules and photo-generated acid molecules. We changed 2-hydroxyethyl methacrylate(2-HEMA) contents to be 5, 10, 15% in our base resin, COMA-acrylate hybrid system to modify the hydrophilicity of resist platforms. By mimicking immersion process to obtain wet-performance of their resists we have obtained relative value of component-leaching. Interaction-force between resist platform and PAG was seemed to be largest when resist component-leaching is least so that the pattern profiles become to be vertical. It was appeared that the 5% 2-HEMA containing resin and TPS-Nonaflate PAG system showed the best performance because of its low leaching resulted from their strong interaction forces. Another polymer parameter to determine the component-diffusivity is glass transition temperature, Tg. Low Tg means high mobility of resin by small thermal energy due to high free volume contents inside of the resist film which can act as diffusion pathways of resist components. 10% MA resin system shows the lowest Tg, around 140 degrees C and the most serious T-topping profiles. Defectivity issue becomes more important in immersion process, which is most related to the partial leaching by residual water and resulted in watermark defects. We evaluated the relative easiness of watermark formation on different resist films by correlations between static and dynamic contact angles. We made 2 different resist films composed of 2 different water-repellent functional group monomers. Static contact angles of developer as well as DI water were measured. It was found indirectly that amphiphilicity of resist film surface makes positive effect on watermarks formation, that is, more hydrophobic and more developer-philic resist film remains less residual water droplets.

Proceedings Article | 29 March 2006 Paper

Parameter investigation of PEB sensitivity

Seung Keun Oh, Eun Kyung Son, Chan Sik Park, Jung Youl Lee, Jeong Woo Kim, Jae Woo Lee, Deog Bae Kim, Jaehyun Kim, Geunsu Lee, Seung-Chan Moon

Proceedings Volume 6153, 615335 (2006) https://doi.org/10.1117/12.655449

KEYWORDS: Polymers, Diffusion, Critical dimension metrology, Molecules, Photoresist processing, Monochromatic aberrations, Semiconducting wafers, Semiconductors, Lithography, Photoresist materials

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Proceedings Article | 29 March 2006 Paper

The suppression method of powder formation in ArF photoresist

Geunsu Lee, Heesung Kim, Eungsok Lee, Myoungsoo Kim, Samyoung Kim, Cheolkyu Bok, Hyeongsoo Kim, Seungchan Moon, Jinwoong Kim

Proceedings Volume 6153, 61533F (2006) https://doi.org/10.1117/12.656860

KEYWORDS: Photoresist materials, Polymers, Coating, Semiconducting wafers, Particles, Scanners, Photoresist processing, Lithography, Line edge roughness, Manufacturing

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