We use Monte Carlo simulations and modeling to study the 1/f noise in CNT films as a function of device parameters
and film resistivity. We consider noise sources due to both tube-tube junctions and nanotubes themselves. By
comparing the simulation results with experimental data, we find that the noise generated by tube-tube junctions
dominates the total CNT film 1/f noise. We then systematically study the effect of device length, device width and film
thickness on the 1/f noise scaling in CNT films. Our results show that the noise amplitude depends strongly on device
dimensions and on the film resistivity, following a power-law relationship near the percolation threshold. Despite its
relative simplicity, our computational approach explains the experimentally observed 1/f noise scaling in CNT films.
Since 1/f noise is a more sensitive measure of percolation than resistivity, these simulations will help improve the
performance of CNT film sensors at the micro-nano interface, where noise is an important figure of merit.
The effects on the overall device noise of a small number of defects in device sections with a strong transfer impedance
coupling to the device terminals is discussed using advanced bulk and silicon-on-insulator n channel MOSFETs and
silicon nanowires as examples. From the measured noise and current-voltage data, the precise physical location of the
noise centers is determined. Potential noise reduction methods are discussed.
A method for increasing the specificity of an MR image using noise correlation measurements is presented. From an MR image different regions within the body are identified based on contrast. Noise signals measured at the ports of the experimental setup are functions of the conductivity at each region and the sensitivity map of the field probes. For a simulated sensitivity map, the ratio of conductivities of two regions of a phantom containing saline and distilled water was determined from the measured noise correlation at the ports.
Trap assisted generation-recombination noise spectra of advanced n-channel MOSFETs are numerically simulated using the drift-diffusion transport model and focusing on the bimolecular electron transitions between the channel and gate oxide. Good agreement between measured and simulated data is observed in both the linear and saturated regime of operation under sub-threshold and inversion conditions. Reverse engineering of the measured noise data reveals the discrete trap distributions in the oxide responsible for the observed spectra.
Conference Committee Involvement (1)
Nanostructure Integration Techniques for Manufacturable Devices, Circuits, and Systems: Interfaces, Interconnects, and Nanosystems