We present state-of-the-art performance of 1.3 μm GaInNAs lasers on GaAs grown by molecular
beam epitaxy. The lowest achieved threshold current density is 297, 150 and 133 A/cm<sup>2</sup> per
quantum well (QW) for single, double and triple QW broad area lasers with a cavity length of 1
mm. The characteristic temperature is 93-133 K in the ambient temperature range of 10-80 °C for
broad area lasers depending on the cavity length, and increases to 163-208 K for ridge waveguide
lasers as a result of temperature insensitive lateral carrier diffusion in QWs. The maximum 3 dB
bandwidth of 17 GHz is achieved in a double QW laser. Uncooled 10 Gb/s operation up to 110 °C
has been demonstrated.