In this work we show successful metalorganic vapor phase epitaxy (MOVPE) of an AlN/AlGaN distributed Bragg reflector (DBR) that is wavelength matched to GaN quantum dots (QDs) in an AlGaN lambda cavity on top. Full insight into the growth of these structures enables the epitaxy of resonant cavity deep UV single photon emitters.
The DBR was grown on an AlN/sapphire template. In order to obtain a high reflectivity as well as a sufficiently large stopband width, the refractive index contrast needs to be maximized. Additionally, the absorption of QD emission in the high gallium containing layer needs to be minimized. A compromise was found for nominal Al-concentration of 70 % in the AlGaN layers. The resulting DBR splits up into self-organized AlN/Al(X)Ga(1-X)N/Al(Y)Ga(1-Y)N trilayers, which add up to desired lambda/2-periods. Therefore, the stopband at 272 nm with a width of 6 nm shows a maximum reflectivity of 99.7 %.
GaN QDs were obtained by growth of GaN on AlGaN for 10 s with a V/III-ratio of 30 followed by a growth interruption of 30 s. The QDs exhibit sharp emission lines with a FWHM down to 1 meV in µ-PL measurements. The main intensity of the QD ensemble emission is in the range of 250 nm to 275 nm.
Finally, spatially resolved low temperature CL measurements show resonant DBR-enhanced GaN QD emission at 271 nm showing successful wavelength match between a AlN/AlGaN deep UV DBR and GaN QDs in an AlGaN lambda-cavity on top.
A strong limitation for the quantum efficiency of group III-nitride based light emitters is the spatial electron-hole separation due to the quantum-confined Stark effect (QCSE). To overcome this problem, Hönig et al. [1] proposed a concept, the Internal-Field-Guarded-Active-Region Design (IFGARD), which enables quasi electric-field free active regions in polar heterostructures. Here, we show how the encapsulation of the active region by additional guard layers results in a strong reduction of the built-in electric field in c-plane wurtzite nanostructures. In particular, we demonstrate experimental evidence for the successful realization of an IFGARD structure based on GaN/AlN heterostructures embedded in GaN nanowires. By means of power-dependent and time-resolved µ-photoluminescence (µ-PL) we experimentally proof the validity of the IFGARD structure. We managed to tune the emission of 4-nm-thick GaN nano-discs up to 3.32 eV at low excitation powers, which is just 150 meV below the bulk GaN bandgap [2]. Our results demonstrate an almost complete elimination of the QCSE in comparison to conventional structures which show approximately 1 eV red-shifted emission. The reduction of the QCSE results in a significant increase of the radiative exciton decay rates by orders of magnitude and demonstrates the potential of IFGARD structures for future light sources based on polar heterostructures.
[1] Hönig et al., Phys. Rev. Applied 7, 024004 (2017)
[2] Schlichting et al., arXiv:1707.06882 (2017).
In this paper the properties of excitons and phonons in doped GaN is reviewed. We demonstrate that in heavy Ge doped GaN new quasi particle can be stabilized. Furthermore, we discuss and use the observation of local phonon modes to clarify the incorporation of germanium, silicon, carbon, and transition metal ions on different lattice places in the nitride material.
We review recent advances in the understanding of the green gap phenomenon, the drastic reduction of quantum efficiency of c-plane InGaN/GaN light-emitting diodes (LEDs) towards the green spectral region. In particular, we have decoupled the contributions of Shockley-Read-Hall recombination, quantum-confined Stark effect and hole localization in the random alloy. We show that the latter, significantly increasing with Indium content, plays a crucial role in the reduction of efficiency, as localized holes do not only possess lower overlap with delocalized electrons in the quantum well, but also appear to enhance Auger recombination.
For our study we use an electro-optical pump and probe scheme[1], which is most suitable to obtain differential carrier lifetimes in device operating conditions. In combination with conventional pulsed electroluminescence measurements, the internal quantum efficiency and recombination rates of the different processes can be determined. Temperature-dependent analyses then allow to assign recombination losses to the different underlying limitations (i.e. random alloying, polarity, defect density)[2].
[1] F. Nippert et al., Japanese Journal of Applied Physics 55, 05FJ01 (2016)
[2] F. Nippert et al., Applied Physics Letters 109, 161103 (2016)
We address the electronic, phononic, and thermal properties of oxide based superlattices and multi quantum well heterostructures. In the first part, we review the present understanding of phonon coupling and phonon propagation in superlattices and elucidate current research aspects of phonon coherence in these structure. Subsequently, we focus on the experimental study of MBE grown ZnO/ZnMgO multi quantum well heterostructures with varying Mg content, barrier thickness, quantum well thickness, and number of periods. In particular, we discuss how the controlled variation of these parameters affect the phonon dispersion relation and phonon propagation and their impact on the thermal properties.
We present a nanometer-scale correlation of the structural, optical, and electronic properties of InGaN/GaN core-shell microrod LEDs: The microrods were fabricated by MOVPE on a GaN/sapphire template covered with an SiO2-mask. Through the mask openings, Si-doped n-GaN cores were grown with high SiH4 flow rate at the base. Subsequently, the SiH4 flow rate was reduced towards the microrod tip to maintain a high surface quality. The Si-doped GaN core was finally encased by an InGaN single quantum well (SQW) followed by an intrinsic GaN layer and a thick Mg-doped p-GaN shell.
Highly spatially resolved cathodoluminescence (CL) directly performed in a scanning transmission electron microscope (STEM) was applied to analyze the free-carrier concentration within the Si-doped GaN core and the luminescence properties of the individual functional layers. The CL was supported by Raman spectroscopy directly carried out at the same microrod on the thin TEM-lamella.
The cross-sectional CL of a single microrod resolves the emission of the single layers. CL and Raman measurements reveal a high free-carrier concentration of 7x1019 cm 3 in the bottom part and a decreasing doping level towards the tip of the microrod. Moreover, structural investigations exhibit that initial Si-doping of the core has a strong influence on the formation of extended defects in the overgrown shells. However, we observe the most intense emission coming from the InGaN QW on the non-polar side walls, which shows a strong red shift along the facet in growth direction due to an increased QW thickness accompanied by an increased indium concentration right at the intersection of generated defects and InGaN QW, a red shifted emission appears, which indicates indium clustering.
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