The state-of-the-art Virtual and Augmented Reality (VR/AR) hardware fails to deliver satisfying visual experience due to missing or conflicting focus cues. The absence of natural focal depth in digital 3D imagery causes the so-called vergence-accommodation conflict, focal rivalry, and possibly damage the eye-sight, especially during prolonged viewing of virtual objects within the arm’s reach. It remains one of the most challenging and market- blocking problems in the VR/AR arena today. This talk will introduce CREAL’s unique near-to-eye light-field projection system that provides high-resolution 3D imagery with fully natural focus cues. The system operates without eye-tracking or severe penalty on image quality, rendering load, power consumption, data bandwidth, form-factor, production cost, or complexity.
Vertical-external-cavity surface-emitting lasers employing QDs as gain media in comparison to QW-based VECSELs can offer beneficial lasing features, such as, temperature resilience, broadband gain and wider wavelength tunability. We demonstrate the first QD-based VECSEL providing 2 W emission at 1.5 µm and a tuning range of 60 nm. This achievement paves the way to multi-Watt VECSELs with extended wavelength tunability.
Optically-pumped vertical external cavity surface emitting lasers (VECSELs) based on flip-chip gain mirrors emitting at the 1.55-μm wavelength range are reported. The gain mirrors employ wafer-fused InAlGaAs/InP quantum well heterostructures and GaAs/AlAs distributed Bragg reflectors, which were incorporated in a linear and a V-cavity configurations. A maximum output power of 3.65 W was achieved for a heatsink temperature of 11°C and employing a 2.2% output coupler. The laser exhibited circular beam profiles for the full emission power range. The demonstration represents more than 10-fold increase of the output power compared to state-of-the-art flip-chip VECSELs previously demonstrated at the 1.55-μm wavelength range, and opens a new perspective for developing practical VECSEL-based laser system for applications such as LIDAR, spectroscopy, communications and distributed sensing.
Emission wavelength setting of 1310nm-waveband VCSELs designed for coarse wavelength division multiplexing (CWDM) 4x10 Gbps fiber-optics transmission can be controlled thanks to the wafer fusion fabrication approach. This approach allows performing the cavity adjustment before bonding the distributed Bragg reflectors (DBRs) to the active cavity of the device. Cavity adjustment was performed by digital etching with nanometer precision and proves to be very effective in compensating for epitaxial growth thickness off-set relative to nominal design and thickness nonuniformity across the wafer. With this fabrication approach we reach on fused VCSEL wafers more than 90% yield of devices that fit the CWDM wavelength slots.
Building coarse wavelength division multiplexing (WDM), 4×10 Gbps VCSEL transmitter modules has the promise for
dramatic decreasing power consumption. Over the last years, we have demonstrated continuous improvements of
parameters and reliability of wafer fused long-wavelength VCSELs. Progress and challenges in industrial fabrication of
wafer-fused VCSELs emitting in the 1310 nm band for high speed WDM applications are reviewed.
We report the injection locking of specific spatial modes and polarization modes of 1.3μm wavelength vertical surface emitting lasers (VCSELs) in single-aperture devices and phase-coupled arrays. The optical injection is realized using a master laser (ML) VCSEL, the beam of which is directed onto the output facet of the slave laser (SL) VCSEL or VCSEL array. We measured the emission spectra of the SL as the ML operating conditions (frequency, power) were varied systematically, and present the results on two-dimensional stability maps of power versus detuning of the ML from the injected modes. In single-aperture devices, the high degree of circular symmetry allows the support of two modes with orthogonal polarizations with ~75 GHz frequency difference. With optical injection, we could induce a polarization mode switching and decrease the power of the free running mode by 25 dB. Model calculations confirm injection locking and specify the stability region. In a 1×2 VCSEL array defined by tunnel junction patterning and biased below threshold, we injection locked the fundamental mode (1×2 mode) and a « broad area » mode (1×3 mode). The spatial overlap between the ML spot and the array mode is shown to be a key factor in injection locking. Locking of the non-lasing 1×3 mode results in suppressed output power of the free running 1×2 mode. These studies are useful for understanding the mode structure of these VCSELs and suggesting ways for their discrimination.
Applications of long-wavelength (λ > 1 μm) vertical-cavity surface-emitting lasers (VCSELs) generally require
close control over wavelength and polarization of the emitted light. In most cases, single mode and
polarization stable lasing is desired. We report here on the detailed modal analysis of wafer-fused 1550-nm
wavelength VCSELs incorporating an AlGaInAs/InP active region, a re-grown circular tunnel junction (TJ) and
undoped AlGaAs/GaAs distributed Bragg reflectors (DBRs). We experimentally determined the diameter of the
TJ that optimizes the output power and threshold current, finding a value between 7.0 μm and 9.5 μm depending
on the temperature. Moreover, we investigated the impact of the TJ aperture diameter on the mode structure.
A large batch of devices was investigated, allowing drawing conclusions on typical behavior of these devices.
The measured emission spectra show that the fundamental spatial mode is split into two orthogonal
polarization modes, which are spectrally separated in wavelength by δ, used as a birefringence parameter. We
observed that this parameter is independent of current but depends on the particular chip, suggesting that it is
caused by stress, growth inhomogeneities, or etched mesa shape. The higher order spatial modes show similar
polarization doublets with a splitting also equal to δ. This suggests that the birefringence results from effects not
particular to the mechanism of mode confinement. Finally, the spectral separation Δ0;1 between the fundamental
mode and the first-order transverse mode increases linearly with current, with a slope that depends only on the
TJ aperture diameter. This confirms that the mode confinement is induced by the structured TJ, and possibly
also by the temperature distribution induced by the current injection.
High performance vertical cavity surface emitting lasers (VCSELs) emitting in the 1310 nm waveband are fabricated by bonding AlGaAs/GaAs distributed Bragg reflectors (DBRs) on both sides of a InP-based cavity containing 5 InAlGaAs quantum wells using the localized wafer fusion technique. A tunnel junction structure is used to inject carriers into the active region. Devices with 7 μm aperture produce single mode emission with 40 dB side-mode suppression ratio.
Maximum single mode output power of 1.7 mW is obtained in the temperature range of 20-70°C. Modulation capability at 3.2 Gb/s is demonstrated both at room temperature and 70°C with rise time and fall time values of eye diagrams bellow 120 ps. Overall device performance complies with the requirements of 10 GBASE-LX4 IEEE.802.3ae standard.
In this paper we report theoretical and experimental results concerning the realization of the phase-matching conditions for the internal second-harmonic generation in InGaAs quantum-well laser diodes emitting around 980 nm in order to enhance the conversion efficiency. The role of the phase-mismatching in the spectral distribution of the internal second-harmonic generation in the CW operation of the above-mentioned lasers is also analyzed. The emission of pairs of narrow blue-green peaks having perfectly symmetrical spectral positions with respect to the central peak of pure second-harmonic generation at ~ 480 nm is most probably enhanced by a mechanism of reciprocal cancellation of the respective phase-mismatch vectors. The theoretical results obtained by numerical integration of the coupled amplitude equations corresponding to the fundamental and second harmonic concerning the interaction length and generation efficiency are in good agreement with the experimental data. The obtained results are important for the assessment of the relationship between the structural parameters of the laser and the conditions which contribute to the stimulation of second-order optical nonlinearities in the laser active region.
In this paper we present an analysis of the phase-matching conditions for internal second-harmonic generation in InGaAs quantum-well laser diodes in order to enhance the conversion efficiency. We have characterized the role of phase- mismatching in the spectral distribution of the internal second-harmonic generation in the CW operation of these lasers. The emission of pairs of narrow blue-green peaks having perfectly symmetrical spectral positions with respect to the central peak of pure second-harmonic generation at approximately 480 nm is most probably enhanced by a mechanism of reciprocal cancellation of the respective phase-mismatch vectors. This study is important for the assessment of the relationship between the structural parameters of the laser and the conditions which contribute to the stimulation of second-order optical nonlinearities in the laser active region.
Two instruments are now available for high depth resolution imaging of the retina. A scanning laser ophthalmoscope is a confocal instruments which can achieve no more than 0.3 mm depth resolution. A longitudinal OCT instrument uses a superluminescent diode which determines a depth resolution better than 20 microns. There is a gap in depth resolution between the two technologies. Therefore, different OCT configurations and low coherence sources are investigated to produce a choice of depth resolutions, and to cover the gap between the old confocal technology and the new OCT imaging method. We show that an instrument with adjustable depth resolution is especially useful for the en-face OCT technology. Such an instrument can bring additional benefits to the investigation process, where different requirements must be met. For instance, a poor depth resolution is required in the process of positioning the patient's eye prior to investigation. A good depth resolution is however necessary when imaging small details inside the eye. The utility of the OCT en-face imaging with adjustable coherence length for diagnostic is illustrated by images taken from the eye of a volunteer. Images with a similar aspect to those produced by a scanning laser ophthalmoscope can now be obtained in real time using the OCT principle.
This paper describes the fabrication technique and operating characteristics of cleaved-coupled cavity (C3) tunable source with central emissions wavelength 835 nm and 980 nm. The C3 concept is realized using gain-guided AlGaAs/GaAs single quantum well and ridge-waveguide InGaAs/AlGaAs/GaAs multiquantum well heterostructures. The tunable wavelength range for these devices was 10 nm and 16 nm respectively. The coupled cavity was formed by cleaving the laser diode chips in two parts. The cleaved sections held together by the contact metals, were then indium soldered p-side up to a copper heat sink for CW operation. The sections length of the 980 nm C3 laser was 320 micrometers and 440 micrometers and 240 micrometers , 260 micrometers for 835 nm device. The emission spectra of 835 nm and 980 nm C3 laser diodes are presented.
This paper present the fabrication and mirrors passivation process of InGaAs/AlGaAs/GaAs narrow stripe 980 nm emission wavelength laser diodes. After mesa-stripe definition and Au-contact deposition procedures, a procedure of in-vacuum cleaving and in-situ passivation with (lambda) /2-thick ZnSe layers was performed. 960 micrometers and 500 micrometers length laser diodes bars was fabricated as a result. Antireflection-high reflectivity coating were formed on the bars facets. Laser diodes were soldered p-junction-side down on copper submounts. The room temperature CW threshold current value of 20 mA and CW maximum output power of 440 mW at 760 mA pumping current were obtained. The far-field emission pattern of laser diodes is lateral single mode in large range of output powers. These laser diodes were used for laser diode module fabrication. In this module the laser diodes was coupled with tapered single mode 9 micrometers /125 micrometers optical fiber with a fused microlens at the end. CW output optical power of 40 mW from the fiber was obtained at 240 mA operating current of the laser diode module.
We have evaluated the resonant photodetection characteristics of long wavelength double fused InGaAsP/AlGaAs vertical cavity lasers. Using VCSEL structures fabricated by the localized fusion technique for laser generation, light detection is also possible in open circuit, short circuit and forward biased (FB) regimes. The wavelength selectivity of the detection increases with driving current in FB regime. Detection spectrum with FWHM as low as 0.02 nm is demonstrated in the FB regime at currents above threshold. Investigated structures emit and detect light with high spectral selectivity and may be very useful as multifunctional elements for signal generation a d detection in wavelength division multiplexing systems.
In this paper we report an indirect method based on photomultiplier response calibration to measure the radiant power of the internal second harmonic generation (ISHG) from InGaAs/GaAs/AlGaAs strained single quantum well buried heterostructure laser diodes. We observed enhanced ISHG radiant power, of the order of magnitude of 10-8 W. This phenomenon represents a signature of the beginning of the process of catastrophic optical degradation of the LD mirror facet layers, where the nonlinear optical interaction occurs.
KEYWORDS: Near field optics, Radio optics, Radiometry, Calibration, Semiconductor lasers, Optical calibration, Photodiodes, Feedback loops, Beam splitters, Fluctuations and noise
Power stabilized DL's represent today convenient sources for radiometric applications, as transfer laboratory standards. Stability measurements were carried out and reported by other authors for different time intervals, but only for low optical power levels (max. 16 mW). For calibrating usual optical radiometers, such low emitted power DL's are useless. This paper reports stability measurements carried out on several collimated DL's with (lambda) around 980 nm and emitted power up to 265 mW in near-field/150 mW in far-field. Stabilities of the order 1e-4 for short-time intervals (tens of seconds) and 1e-3 for medium-time intervals (1 hour) were found for a non-thermostated structure, having the control photodiode (PD) in the same enclosure with the DL (at the rear of the structure). The corresponding stabilities for an external control PD resulted of the order 1e-5 for both short and medium time intervals. The schematic of the optical power stabilizer is presented.
In this paper we report an indirect method based on photomultiplier response calibration to measure the radiant power of the internal second harmonic generation (ISHG) from InGaAs/GaAs/AlGaAs strained single quantum well buried heterostructure laser diodes. We observed enhanced ISHG radiant power, of the order of magnitude of 10-8 W. This phenomenon represents a signature of the beginning of the process of catastrophic optical degradation of the LD mirror facet layers, where the nonlinear optical interaction occurs.
KEYWORDS: Semiconductor lasers, Near field, Quantum wells, Signal detection, Radiation effects, Waveguides, Heterojunctions, Second-harmonic generation, Switching, Near field optics
In this paper the investigation of internal optical second harmonic generation (SH) of buried heterostructure (BH) InGaAs/AlGaAs strained quantum well laser diodes is performed for additional characterization of these devices which are capable of operating at high power densities as high as 3 MW/cm2 at room temperature and 0.1 MW/cm2 at 190 degree(s)C. The blue-green emission level is of the order of 105 photons per second for laser diodes with 3micrometers active layer width at fundamental optical power of 2.0 mW. This relatively high SH intensity level makes it possible to observe the light spot in optical microscopes and to detect SH signal with a standard photon counting system in wide operation current and ambient temperature intervals. Variation of the SH signal at the constant fundamental harmonic (FH) power indicates that changes in the near field occur. SH far-field patterns of laser diodes reflect the effects of SH radiation spot size reduction in comparison with FH radiation spot size and FH waves nonlinear interactions in the waveguide material.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.