A numerical simulation of the dynamics of melting and crystallization processes induced in cadmium selenide
by radiation of the KrF excimer laser (&lgr; = 248 nm, &tgr; = 20 ns) was carried out taking into account the
components evaporation from the surface and their diffusion in the melt. It is shown that intensive
components evaporation from the surface results in the formation of nonmonotone temperature profile with
maximum temperature at a depth of about 5 - 15 nm. As a result, melt formed in the semiconductor volume
extends both to the surface and to the depth of sample. After termination of the laser radiation enrichment of
the surficial region by selenium is equals ~ 0.51.
The results of numerical simulation of nanosecond radiation ruby laser influence on cadmium telluride have shown that evaporation process essentially affects the dynamics of phase transitions in the near-surface region of cadmium telluride. Intensive evaporation results in the material surface cooling forming a nonmonotone temperature profile with maximum temperature in semiconductor volume at the distance of ~ 20 nm from the surface. The melt formed under the surface at energy radiation density exceeding the threshold value extends to the surface and to the volume of semiconductor as
well. As a result of evaporation and diffusion of cadmium telluride components in the melt the near-surface region is enriched with tellurium. While modeling, the dependence of crystallization temperature and phase transition latent heat upon the components concentration in the melt was used, which allowed us to receive a satisfactory agreement with the experimental data concerning melt duration dependence upon energy density.
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