Broadband photodetectors are becoming attractive in all weather and all time detection. However, silicon, germanium or compound semiconductors could not cover the visible and infrared wavebands which are commonly used in optoelectronic application. Here, we demonstrate a broadband photodetector based on graphene and silicon nanocrystals which are all CMOS-compatible. We achieved a photodetector which photoelectric response range covering visible and infrared (400-1600nm) and peak response up to 630mA/W. Furthermore, the photoelectric response time lower than 50μs.
Ultro-thin benzocyclobutene（BCB）bonding process has been proposed as a solution of InGaAs/Si optoelectronic heterogeneous integration. Here, we present a process of InGaAs PIN photodetector bonding onto silicon photonic chip, an ultra-thin bonding layer below 400nm is applied. Silicon photonic chip was fabricated by CMOS compatible process. In order to importing and exporting the light, a focal grating coupler was designed and fabricated, and fiber-to-chip efficiency was 37.7%. InGaAs PIN photodetector responsivity was 0.95A/W which taped out on 3 inch standard InP process. The result presented that the responsivity deterioration coefficient was below 1dB, and the coupling efficiency from Si waveguide to InGaAs photodetector was 41.8%.
Vacuum-semiconductor hybrid photodetector is a new kind of photoelectric detecting device. In this paper, the basic structure and principle of electron bombarded avalanche diode hybrid photodetector are introduced. Then a sample of electron bombarded silicon avalanche diode hybrid photodetector is successfully fabricated. The results show that the response range of the photodetector is 300nm-800nm, and the electron bombarded gain is more than 600 times under the high voltage of -8000V. The breakdown voltage of silicon avalanche diode avalanche is about -202V. The dark current of device under linear avalanche mode with gain equals 30 is about 3.2nA. The total gain of the tube after electron bombarded gain and avalanche gain are cascaded can be up to 1.5 × 104.
According to the application of underwater lidar imaging, a high speed optoelectronic imaging module was developed. On the basis of traditional technology of ICCD, the high speed blue-green enhanced multi-alkali cathode was developed, A number of key technologies have been breached for range gating, including low delay and high speed gating, high precision delay control, high speed automatic gain control. A high-precision gated ICCD module with minimum gate width of 3ns, jitter less than 100ps and 100ps minimum delay step was developed. The test conditions of range gated imaging in air were established, the depth of field was less than 2m，the imaging blind area limit is less than 2.5m. The effective detection distance underwater was 50m.