An evanescently-coupled, hybrid InGaAsP-Si laser operating at 1.55 μm is presented by selective area metal bonding (SAMB). The III-V laser, fabricated on a p-InP substrate with a semi-insulating InP:Fe buried heterostructure (BH), serves to provide optical gain. On the SOI wafer, a 3-μm wide and 500-nm high Si waveguide is formed and the bonding metal (AuSn alloy) is selectively deposited in the regions 6 μm away from the Si waveguide on each side. The InGaAsP gain structure is flip-chip bonded onto the patterned SOI wafer using SAMB method which separates laterally the optical coupling area and the metal bonding area to avoid strong light absorption by the bonding metal. The hybrid laser runs with a maximum single-sided output power of 9 mw at room temperature. The slope efficiency of the hybrid laser is about 0.04 W/A, 4 times that of the laser before bonding which indicates that the light confinement is improved after the bonding. The hybrid laser has achieved 10 °C contimuous wave (CW) lasing. A near-field image of the hybrid laser is studied. As the inject current increases, the light spot markedly shifts down to the Si waveguide and covers the Si waveguide region, which demonstrates that the light generated in the III-V active region is coupled into the Si waveguide. This method allows for different III-V devices to be bonded onto any desired places on a SOI substrate. The simplicity and flexibility of the fabrication process and high yield make the hybrid laser a promising light source.
In order to combine both advantages of organic and inorganic materials and to solve the problem of mobility mismatch
between hole transport layer (e.g. NPB) and electron transport layer (e.g. AlQ) of organic light emitting diodes, a
mobility-tunable HTL of silicon-rich silicon oxide (Si1+xO2) is proposed. By changing the degree of excess silicon x, the
mobility of Si1+xO2 can be controlled into a suitable range of ~10-5 cm2·V-1·s-1 which matches well with that of AlQ. The
organic light emitting devices fabricated on silicon substrates have a lower operating voltage of 6.0 V and a higher
maximum power efficiency of 0.33 lm/W.
We report the experimental observation and measurement of the polarized electroluminescence from an edge-emission
Si based- organic light emitting device (OLED) with a Sm/Au or Sm/Ag cathode. Light collected from the OLED edge
comes from the scattering of the surface plasmon polaritons (SPPs) at the device boundary. This experiment shows that
such Si-OLED can be an electrically excited SPP source on a silicon chip for optical interconnect based on SPPs.
We added excess silicon into erbium silicate to form silicon-rich erbium silicate (SRES) films on p-type silicon
substrates by magnetron sputtering technique. After annealed at 850°C in N2, the element contents of erbium, silicon and
oxygen in the films were estimated by Rutherford backscattering spectroscopy. Room temperature Er3+ 1.54 μm
electroluminescence from the structure of indium tin oxide (ITO)/SRES/p-Si has been studied. Its electroluminescence
intensity can be markedly enhanced by optimizing the excess Si content in the SRES film.
SiO2:Si:Er films were deposited on n+-Si substrate using the magnetron sputtering technique, and then Au/ SiO2: Si:Er /n+-Si diodes were fabricated. Both Er3+ photoluminescence (PL) from the SiO2: Si: Er/n+-Si and electroluminescence (EL) from the Au/SiO2: Si: Er /n+-Si diodes were studied. The 1.54 micrometers PL intensity ratio of SiO2: Si: Er/n+-Si to that of the SiO2: Er/n+-Si measured under identical conditions can be as large as ~30. While the 1.54 micrometers EL intensity ratio of an Au/ SiO2:Si:Er/n+-Si diode to that of an Au/SiO2:Er/n+-Si diode measured under identical conditions can be as large as 6. We also deposited nanoscale (SiO2:Er/Si(1.0~4.0nm)/SiO2:Er) sandwich structure, in which the silicon layer between the two SiO2:Er barriers was 1.0~4.0 nm thick with an interval of 0.2 nm, on both n+-Si and p-Si substrates. Each EL spectrum of the Au/nanoscale (SiO2:Er/Si/SiO2:Er)/n+-Si diodes can be fitted by three Gaussian bands with peak energies of 0.757 eV (1.64 micrometers ), 0.806 eV (1.54 micrometers ) and 0.860 eV (1.44 micrometers ), and full widths at half maximum of 0.052, 0.045 and 0.055 eV, respectively. Among the Au/nanoscale (SiO2:Er/Si/SiO2:Er)/n+-Si diodes with the Si layers having various thicknesses, the EL intensities of the 1.64, 1.54 and 1.44 micrometers bands of the diode with a 1.6 nm Si layer attain maxima which are 22, 8 and 7 times larger than those of the control diode without any Si layer (Au/nanoscale SiO2:Er/n+-Si), respectively.