Sand erosion durability of amorphous hydrogenated(a-SiC:H) and non-hydrogenated (a-SiC) Silicon-carbon thin films deposited by direct current(DC) magnetron sputtering on the crystal Silicon have been investigated in this paper. A well calculated simulations indicate that thin film perform processing outstanding sand erosion durability with higher hardness, resulting a promoted processing in the deposition of SiC. The deposition conditions such as gas pressure, sputtering power and substrate bias that all affects the properties of the thin film ultimately, which was tested by Fourier Transform Infrared Spectroscopy(FTIR), Universal Mechanical Tester(UMT) and White Light Interferometer(WLI). The sand erosion test reveals a-SiC thin film has an advantage of mechanical property compared to a SiC:H and DLC coating according to the least impact cracks on its surface, demonstrating the previous calculated simulations strongly.
ITO thin films were prepared by oxygen ion-assisted electron beam (EB) evaporation technique onto K9 glass substrate
at low temperature and effects of substrate temperature, oxygen flux on the structure, electrical and optical properties of
ITO thin films were investigated. An advanced plasma source (APS) was used to produce high density argon and oxygen
ion flux to cause electron degeneracy in the band gap by introducing non-stoichiometry in the ITO films to improve the
conductivity of the prepared films. The structure of the ITO thin films were characterized by XRD and the results shown
that all of the ITO films deposited at the temperature above 160°C shown a polycrystalline structure. And as the
substrate temperature increased, the optical transmittance and electrical conductivity were improved. It is also found that
the increase of oxygen flux increased the optical transmittance of the deposited ITO films, however, at a given deposition
rate, the electrical conductivity showed a maximum in a certain range of oxygen flux. ITO thin films with the resistivity
of 1.65×10-4 Ω· cm and an optical transmittance of above 90% in the visible region were prepared at a temperature of
250°C by the given method.