Dr. Guido Hergenhan Profile

Dr. Guido Hergenhan

Team Leader System Development Lithography at JENOPTIK Optical Systems GmbH

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Publications (11)

Proceedings Article | 23 March 2020 Paper

Realization of thermally stable transmissive optical elements for the EUV wavelength range

G. Hergenhan, M. Panitz, C. Ziener, J. Taubert, D. Grimm, M. Tilke

Proceedings Volume 11323, 113232D (2020) https://doi.org/10.1117/12.2551869

KEYWORDS: Optical components, Silicon, Extreme ultraviolet, Etching, Isotropic etching, Chemical elements, Extreme ultraviolet lithography, Chromium, Ultra low expansion glass

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Proceedings Article | 21 March 2008 Paper

Progress on Xe-DPP source development for alpha phase

Chinh Duc Tran, Christian Ziener, Denis Bolshukhin, Masaki Yoshioka, Max C. Schürmann, Jürgen Kleinschmidt, Vladimir Korobochko, Guido Schriever, Guido Hergenhan

Proceedings Volume 6921, 69210U (2008) https://doi.org/10.1117/12.772830

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Plasma, Integrated optics, Scanners, Curtains, Electrodes, Reliability, Xenon, EUV optics

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Proceedings Article | 15 March 2007 Paper

EUV source development for high-volume chip manufacturing tools

Max Schürmann, Uwe Stamm, Guido Schriever, Guido Hergenhan, Vladimir Borisov, Jürgen Kleinschmidt, Masaki Yoshioka, Christian Ziener

Proceedings Volume 6517, 65170P (2007) https://doi.org/10.1117/12.712136

KEYWORDS: Extreme ultraviolet, Plasma, Electrodes, Tin, Extreme ultraviolet lithography, Xenon, Prototyping, Manufacturing, Integrated optics, Laser applications

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Proceedings Article | 23 March 2006 Paper

Development status of EUV sources for use in Beta-tools and high-volume chip manufacturing tools

V. Borisov, G. Hergenhan, U. Stamm, J. Kleinschmidt, V. Korobotchko, J. Brudermann, Denis Bolshukhin, M. Schürmann, G. Schriever, B. Nikolaus, C. Ziener

Proceedings Volume 6151, 61510O (2006) https://doi.org/10.1117/12.652989

KEYWORDS: Extreme ultraviolet, Plasma, Electrodes, Xenon, Tin, Manufacturing, Extreme ultraviolet lithography, High volume manufacturing, Hydrogen, Prototyping

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In the paper we give an update about the development status of gas discharge produced plasma (GDPP) EUV sources at XTREME technologies. Already in 2003 first commercial prototypes of xenon GDPP sources of the type XTS 13-35 based on the Z-pinch with 35 W power in 2π sr have been delivered and integrated into micro-exposure tools from Exitech, UK. The micro-exposure tools with these sources have been installed in industry in 2004. The first tool has made more than 100 million pulses without visible degradation of the source collector optics. For the next generation of full-field exposure tools (we call it Beta-tools) we develop GDPP sources with power of > 10 W in intermediate focus. Also these sources use xenon as fuel which has the advantage of not introducing additional contaminations. Here we describe basic performance of these sources as well as aspects of collector integration and debris mitigation and optics lifetime. To achieve source performance data required for high volume chip manufacturing we consider tin as fuel for the source because of its higher conversion efficiency compared to xenon. While we had earlier reported an output power of 400 W in 2π sr from a tin source we could reach meanwhile 800 W in 2π sr from the source in burst operation. Provided a high power collector is available with a realistic collector module efficiency of between 9% and 15 % these data would support 70-120 W power in intermediate focus. However, we do not expect that the required duty cycle and the required electrode lifetimes can be met with this standing electrode design Z-pinch approach. To overcome lifetime and duty cycle limitations we have investigated GDPP sources with tin fuel and rotating disk electrodes. Currently we can generate more than 200 W in 2π sr with these sources at 4 kHz repetition rate. To achieve 180 W power in intermediate focus which is the recent requirement of some exposure tool manufacturers this type of source needs to operate at 21-28 kHz repetition rate which may be not possible by various reasons. In order to make operation at reasonable repetition rates with sufficient power possible we have investigated various new excitation concepts of the rotating disk electrode configurations. With one of the concepts pulse energies above 170 mJ in 2π sr could be demonstrated. This approach promises to support 180 W intermediate focus power at repetition rates in the range between 7 and 10 kHz. It will be developed to the next power level in the following phase of XTREME technologies' high volume manufacturing source development program.

Proceedings Article | 6 May 2005 Paper

EUV sources for EUV lithography in alpha-, beta-, and high volume chip manufacturing: an update on GDPP and LPP technology

A. Geier, I. Ahmad, B. Mader, G. Schriever, J. Kleinschmidt, J. Ringling, C. Ziener, V. Korobotchko, G. Hergenhan, T. Brauner, J. Brudermann, T. Chin, S. Gotze, D. Bolshukhin, R. de Bruijn, K. Gabel, A. Keller, U. Stamm

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.599544

KEYWORDS: Extreme ultraviolet, Xenon, Plasma, Tin, Reflectivity, Mirrors, Solids, Integrated optics, Optics manufacturing, High volume manufacturing

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In the paper we report about the progress made at XTREME technologies in the development of EUV sources based on gas discharge produced plasma (GDPP) technologies and laser produced plasma (LPP) technologies. First prototype xenon GDPP sources of the type XTS 13-35 based on the Z-pinch principle with 35 W power in 2π sr have been integrated into micro-exposure tools from Exitech, UK. Specifications of the EUV sources and experience of integration as well as data about component and optics lifetime are presented. In the source development program for Beta exposure tools and high volume manufacturing exposure tools both tin and xenon have been investigated as fuel for the EUV sources. Development progress in porous metal cooling technology as well as pulsed power circuit design has led to GDPP sources with xenon fuel continuous operating with an output power of 200 W in 2π sr at 4500 Hz repetition rate. With tin fuel an output power of 400 W in 2π sr was obtained leaving all other conditions unaltered with respect to the xenon based source. The performance of the xenon fueled sources is sufficiently good to fulfill all requirements up to the beta tool level. For both the xenon and the tin GDPP sources detailed data about source performance are reported, including component lifetime and optics lifetime. The status of the integration of the sources with grazing incidence collector optics is discussed. Theoretical estimations of collection efficiencies are compared with experimental data to determine the loss mechanisms in the beam path. Specifically contamination issues related to tin as target material as well as debris mitigation in tin sources is addressed. As driver lasers for the LPP source research diode-pumped Nd:YAG lasers have been used to generate EUV emitting plasma. As target material xenon has been employed. Conversion efficiencies have been measured and currently the maximum conversion efficiency amounts to 1 %. The laser driver power of 1.2 kW is currently achieved with a masteroscillator power-amplifier industrial Nd:YAG laser configuration. With this laser, xenon based EUV sources have achieved 10 W EUV power at 13.5 nm emitted into 2π sr solid angle. For the xenon LPP sources detailed data about the achieved source performance including component lifetime and optics lifetime are reported. The status of the integration of the sources with normal incidence collector optics is shown. The potentials and limits of Z-pinch GDPP and LPP EUV source technologies to achieve high volume manufacturing specifications are discussed in this paper.

Proceedings Article | 6 May 2005 Paper

Development status of gas discharge produced plasma Z-pinch EUV sources for use in beta-tools and high volume chip manufacturing tools

V. Korobotchko, J. Ringling, J. Kleinschmidt, K. Gabel, G. Hergenhan, A. Keller, S. Gotze, B. Mader, C. Ziener, J. Brudermann, R. de Bruijn, C. Tran, A. Geier, U. Stamm, I. Ahmad, D. Bolshukhin, G. Schriever

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.599560

KEYWORDS: Extreme ultraviolet, Plasma, Electrodes, Xenon, Tin, Integrated optics, EUV optics, Visible radiation, Optical filters, Metrology

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Proceedings Article | 20 September 2004 Paper

High-power sources for EUV lithography: state of the art

Juergen Kleinschmidt, Sven Goetze, Christian Ziener, Guido Hergenhan, Uwe Stamm, Henry Birner, Frank Flohrer, Rainer Mueller, Jesko Brudermann, Tran Duc Chinh, Bjoern Mader, Imtiaz Ahmad, Kai Gaebel, Jens Ringling, Denis Bolshukhin, Vladimir Korobochko, Guido Schriever, Diethard Kloepfel

Proceedings Volume 5448, (2004) https://doi.org/10.1117/12.548385

KEYWORDS: Extreme ultraviolet, Plasma, Extreme ultraviolet lithography, Tin, Mirrors, Xenon, Solids, Optics manufacturing, High volume manufacturing, Reflectivity

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The availability of extreme ultraviolet (EUV) light sources, measurement tools and integrated test systems is of major importance for the development of EUV lithography for use in high volume chip manufacturing which is expected to start in 2009. The estimates of cost of an EUV exposure tool in combination with sophisticated throughput models leads to a throughput of 120 wafers per hour necessary for economic use of EUV lithography. Concluding from that light sources are necessary which deliver an EUV output power of 115 W at 13.5 nm at the entrance of the illuminator system. The power requirement in combination with the required lifetimes of source components and collector optics make the source technology the most critical issue to be solved when developing EUV lithography. The present paper gives an update of the development status of EUV light sources at XTREME technologies, a joint venture of Lambda Physik AG, Goettingen, and Jenoptik LOS GmbH, Jena, Germany. Results on both laser produced plasma (LPP) and gas discharge produced plasma (GDPP), the two major technologies in EUV sources, are given. The LPP EUV sources use xenon-jet target systems and pulsed lasers with 500 W average power at up to 10 kHz developed at XTREME technologies. The maximum conversion efficiency from laser power into EUV in-band power is 1.0% into 2π solid angle. 2.0 W EUV radiation is generated at 13.5 nm in 2π sr solid angle. The small source volume of < 0.3 mm diameter will allow large collection angles of 5 sr. The intermediate focus power is estimated to 1 W. Collector mirror lifetime tests showed 5 million pulses lifetime without debris mitigation. With debris mitigation in place lifetimes of more than 1 billion pulses are estimated. For the next generation of higher power EUV LPP sources a laser driver has been tested at 1.3 kW average laser power. This will lead to 5 W EUV power in intermediate focus. The GDPP EUV sources use the Z-pinch principle with efficient sliding discharge pre-ionization. Prototype commercial gas discharge sources with an EUV power of 35W in 2π sr were already delivered for integration into EUV microsteppers. These sources are equipped with a debris-filter which results in an optics lifetime exceeding 100 million discharges at 1 kHz repetition frequency. The same lifetime was achieved for the components of the discharge system itself. The progress in the development of high-power discharge sources resulted in an EUV power of 150 W in continuous operation at 4.5 kHz repetition rate by implementation of porous metal cooling technology. The EUV plasma has a FWHM-diameter of 0.5 mm and a FWHM-length of 1.5 mm. The intermediate focus power is calculated to be in the range of 15 W - 20 W, depending somewhat on the transmission of the optical path to the intermediate focus and on the etendue specification. The typical fluctuations of the EUV energy are standard deviation σ<5% without any active stabilization. Discharge sources with Sn as emitter were investigated as more efficient alternative to Xenon. Estimates regarding Sn sources reveal the potential of achieving 65 W intermediate focus power by using developed porous metal cooling technology. Improvement of cooling could open the path to 115 W of power for high volume manufacturing using EUV lithography. However, Sn-sources are technologically risky und much less advanced than Xe sources, since fuel-handling and debris mitigation is much more challenging in comparison to Xe-sources. GDPP and LPP sources still compete for the technology of high volume manufacturing sources for EUV lithography. Optimization potential of the etendue of the optical system of EUV scanners will certainly influence any technology decision for HVM sources.

Proceedings Article | 20 May 2004 Paper

EUV source power and lifetime: the most critical issues for EUV lithography

Denis Bolshukhin, Guido Schriever, Imtiaz Ahmad, Henry Birner, Tran Duc Chinh, Sven Goetze, Guido Hergenhan, Jesko Brudermann, Uwe Stamm, Kai Gaebel, Rainer Mueller, Jens Ringling, Christian Ziener, Bjorn Mader, Frank Flohrer, Diethard Kloepfel, Juergen Kleinschmidt, Vladimir Korobotchko

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.535410

KEYWORDS: Extreme ultraviolet, Plasma, Extreme ultraviolet lithography, Tin, Mirrors, Xenon, High volume manufacturing, Metals, Reflectivity, EUV optics

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Semiconductor chip manufacturers are expecting to use extreme ultraviolet (EUV) lithography for high volume manufacturing of DRAMs and ICs starting by the end of this decade. Among all the technologies and modules which have to be developed EUV sources at 13.5 nm are considered to be the most critical issue. Specifically the required output power of 115 W at the entrance of the illuminator system in combination with the required lifetimes of source components and collector optics make the source technology critical for EUV lithography. The present paper gives an update of the development status of EUV light sources at XTREME technologies, a joint venture of Lambda Physik AG, Goettingen, and Jenoptik LOS GmbH, Jena, Germany. Results on both laser produced plasma (LPP) and gas discharge produced plasma (GDPP), the two major technologies in EUV sources, are given. The LPP EUV sources use xenon-jet target systems and pulsed lasers with 500 W average power at up to 10 kHz developed at XTREME technologies. The maximum conversion efficiency from laser power into EUV in-band power is 1.0 % into 2p solid angle. 2.0 W EUV radiation is generated at 13.5 nm in 2p sr solid angle. The small source volume of < 0.3 mm diameter will allow large collection angles of 5 sr. The intermediate focus power is estimated to 1 W. Collector mirror lifetime tests showed 5 million pulses lifetime without debris mitigation. With debris mitigation in place lifetimes of more than 1 billion pulses are estimated. For the next generation of higher power EUV LPP sources a laser driver has been tested at 1.3 kW average laser power. This will lead to 5 W EUV power in intermediate focus. The GDPP EUV sources use the Z-pinch principle with efficient sliding discharge pre-ionization. Prototype commercial gas discharge sources with an EUV power of 35W in 2p sr were already delivered for integration into EUV microsteppers. These sources are equipped with a debris-filter which results in an optics lifetime exceeding 100 million discharges at 1 kHz repetition frequency. The same lifetime was achieved for the components of the discharge system itself. The progress in the development of high-power discharge sources resulted in an EUV power of 150 W in continuous operation at 4.5 kHz repetition rate by implementation of porous metal cooling technology. The EUV plasma has a FWHM-diameter of 0.5 mm and a FWHM-length of 1.5 mm. The intermediate focus power is calculated to be in the range of 15 W - 20 W, depending somewhat on the transmission of the optical path to the intermediate focus and on the etendue specification. The typical fluctuations of the EUV energy are standard deviation s<5% without any active stabilization. Discharge sources with Sn as emitter were investigated as more efficient alternative to Xenon. Estimates regarding Sn sources reveal the potential of achieving 65 W intermediate focus power by using developed porous metal cooling technology. Improvement of cooling could open the path to 115 W of power for high volume manufacturing using EUV lithography. However, Sn-sources are technologically risky und much less advanced than Xe sources, since fuel-handling and debris mitigation is much more challenging in comparison to Xe-sources. GDPP and LPP sources still compete for the technology of high volume manufacturing sources for EUV lithography. Optimization potential of the etendue of the optical system of EUV scanners will certainly influence any technology decision for HVM sources.

Proceedings Article | 16 June 2003 Paper

High-power EUV lithography sources based on gas discharges and laser-produced plasmas

Guido Schriever, C. Tran, Istvan Balogh, Jürgen Kleinschmidt, Vladimir Korobotchko, G. Hergenhan, Jens Ringling, H. Birner, J. Brudermann, Kai Gäbel, Uwe Stamm, Frank Flohrer, D. Bolshukhin, Imtiaz Ahmad, S. Götze, C. Ziener, Diethard Klöpfel, S. Enke

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.482676

KEYWORDS: Extreme ultraviolet, Plasmas, Solids, Xenon, Extreme ultraviolet lithography, Optical filters, Gas lasers, EUV optics, Lithography, Reflectivity

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Semiconductor chip manufacturers are expecting to use extreme UV lithography for production in 2009. EUV tools require high power, brilliant light sources at 13.5 nm with collector optics producing 120 W average power at entrance of the illuminator system. Today the power and lifetime of the EUV light source are considered as the most critical issue for EUV lithography. The present paper gives an update of the development status of EUV light sources at XTREME technologies, a joint venture of Lambda Physik AG, Goettingen, and Jenoptik LOS GmbH, Jena, Germany. Results on both laser produced plasma (LPP) and gas discharge produced plasma (GDPP), the two major technologies in EUV sources, are given. The LPP EUV sources use xenon-jet target systems and pulsed lasers with 400 W average power at 10 kHz developed at XTREME technologies. The maximum conversion efficiency form laser power into EUV in-band power is 0.75% into 2π solid angle. With 300 W laser average power at 3300 Hz repetition rate up to 1.5 W EUV radiation is generated at 13.5 nm. After a collector of 5 sr this corresponds to 0.6 W in intermediate focus without spectral purity filter and 0.5 W in intermediate focus with spectral purity filter. The direct generation of the EUV emitting plasma from electrical discharges is much simpler than LPP because the electrical energy has not to be converted into laser radiation before plasma excitation. XTREME technologies' Xenon GDPP EUV sources use the Z-pinch principle with efficient sliding discharge pre-ionization. The plasma pinch size and the available emission angle have been matched to the etendue of the optical system of 2-3 mm2 sr, i.e. no additional etendue related loss reduces the usable EUV power from the source. In continuous operation at 1000 Hz the GDPP sources emit 50W into 2π solid angle are obtained from the Z-pinch sources. Spatial and temporal emission stability of the EUV sources is in the range of a few percent. Debris shields for EUV sources have been developed which give improvement of the collector optics lifetime by several orders of magnitude.

Proceedings Article | 4 June 2002 Paper

Experiments on the scalability of the coherent coupling of VCSEL arrays

Bernd Luecke, Guido Hergenhan, Uwe Brauch

Proceedings Volume 4649, (2002) https://doi.org/10.1117/12.469230

KEYWORDS: Vertical cavity surface emitting lasers, Resistors, Collimation, Laser stabilization, Optical components, Superposition, Connectors

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Proceedings Article | 1 May 2000 Paper

Autostable injection locking of a 4x4 VCSEL array with on-chip master laser

Bernd Luecke, Markus Scholl, Uwe Brauch, Adolf Giesen, Guido Hergenhan, Hans Opower, Helmut Huegel

Proceedings Volume 3946, (2000) https://doi.org/10.1117/12.384381

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Lawrencium, Microlens array, Phase shifts, Diffraction, Resistors, Superposition, Switching, Mirrors

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