In this study, we have investigated the profile of ArF photo-resist patterns in order to optimize the next generation
photo process of trench layer and improve their profile. In terms of resolution, PR (Photo Resist) for 193 nm (ArF) has
better quality than that of 248 nm (KrF). However, there found some problems such as LER (Line Edge Roughness), top
loss, sloped side wall, footing and standing wave in the aspect of PR profile. Thus, we observed the ArF PR profile
which has different process condition like TBARC, SOB (Soft Bake) and PEB (Post Exposure Bake) for the profile
optimization. As a result, the enhancement of sloped side wall, footing, and rounded top is obtained when the SOB and
PEB temperature are tuned under the optimized condition of T<sub>BARC</sub> (BARC thickness), and T<sub>PR</sub> (PR thickness). Finally,
we could set up the optimized process condition according to the result described above.
Flare has been important variable to obtain good CD control in the resolution limited lithography area such as sub-90 nm node. So far, many papers have been reported about how to measure flare and how flare impact on CD control. And some papers have tried to understand theoretical mechanism of flare. However, we expect that the illumination apertures such as the partial coherence factors or the modified illumination aperture shapes would also give impact on the flare. The short-range flare is changing as the open ratio variation on the mask. We assume that the illumination aperture shape change will also give similar effect as the open ratio variation on the mask. In this paper, we will show how the illumination aperture shapes give effect on short-range flare. Experiments were done for 100 nm lines surrounded by clear window having different width from 1 μm to 20 μm. We utilized the 193 nm scan-and-step exposure tool with the partially coherent conventional and off-axis illuminations apertures. In conclusion, we will prove the relationship between flare and illumination apertures.