This study aims to designing quantum dot semiconductor optical amplifier (QD-SOA) by amplification without
inversion technique in InxGa1-xN/GaN semiconductor quantum dot (nanostructure). To do this, eigen energies and
their corresponding wave functions of a Y-type four-level atomic system were obtained by solving of Schrodinger-
Poisson equations self-consistently (considering intersublevel transitions) in InxGa1-xN/GaN quantum dot. The
principle of quantum optics to obtain dynamic property of quantum dot density matrix elements was employed and
investigated the lasing without inversion (LWI) phenomenon in this quantum dot.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.