Prof. Hajime Asahi Profile

Prof. Hajime Asahi

at Osaka Univ

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Proceedings Article | 1 July 2003 Paper

New III-V-based magnetic semiconductors and their optical and magnetic properties

R. Asano, Hiroyuki Tanaka, Hajime Asahi, Mamoru Hashimoto, Y. Zhou

Proceedings Volume 4999, (2003) https://doi.org/10.1117/12.482476

KEYWORDS: Magnetic semiconductors, Heterojunctions, Magnetism, Chromium, Gallium nitride, Mid-IR, Electrons, Sapphire, Semiconductors, Ferromagnetics

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II-V-based magnetic semiconductors are gathering great interest because of their potential utility as new functional materials that are expected to lead to the introduction of spin degree-of-freedom for semiconductor devices. New magnetic semiconductor heterostructure, InMnAsSb/InSb, was proposed and grown by low temperature molecular beam epitaxy (MBE). Mid-infrared (2-6 μm) light-induced ferromagnetism was observed at temperatures lower than 40-50K and this light-induced magnetization remained even after the stop of light irradiation. Observed characteristics are applicable to the mid-infrared sensor/memory devices. New magnetic semiconductor GaCrN layers were grown by electron-cyclotron-resonance (ECR) plasma-assisted MBE and the ferromagnetic characteristics were observed at 7-400K. Clear hysteresis and clear saturation were observed in the magnetization versus magnetic field (M-H) curves at all measuring temperatures. We also observed the photoluminescence (PL) emission from GaCrN layers. Applications to the novel devices controlling charges (electrons and holes), spins and photons are expected.

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